GS61008P 100V enhancement mode GaN transistor Preliminary Datasheet Features - 100V enhancement mode power switches - Ultra low FOM Island TechnologyTM die - Low inductance GaNPXTM package - Reverse current capability - Zero reverse recovery loss - Source-sense for optimal high speed design - RoHS 6 compliant Applications - 48V DC-DC conversion - Telecom & Cloud Computing Systems - Automotive Systems - Energy Storage Systems - AC-DC power supplies (secondary) - VHF very small form-factor AC-DC Adapter - Appliances and power tools circuit symbol D G SS TP S Absolute Maximum Ratings (Tcase = 25C except as noted) Parameters Operating Junction Temperature Storage Temperature Range Drain-to-Source Voltage Gate-to-Source Voltage Gate-to-Source Voltage - transient Continuous Drain Current (Tcase=25C) (Note 1) Continuous Drain Current (Tcase=100C) Pulsed Drain Current (Tcase=25C) G SS TP = thermal pad Symbol TJ TS VDS VGS VGS IDS(cont)25 IDS(cont)100 IDS(pulse)25 D S Value -55 to +150 -55 to +150 100 -10 to + 7 10 90 60 135 Unit C C V V V Value 0.55 55 260 Units A (1) Limited by saturation Thermal Characteristics (Typical values unless otherwise noted) Parameter Thermal Resistance (junction to case) Thermal Resistance (junction to ambient) (Note 2) Maximum Soldering Temperature (MSL3 rated) Symbol RJC RJA TSOLD C /W C (2) Device mounted on 40mm x 40mm x 1.5mm single layer epoxy PCB FR4 with 6cm2 copper area (thickness 70m) for thermal pad connection. PCB is vertical without air stream cooling. Ordering information Part number GS61008P GS61008P GS61008P DS Rev 1509044 Package type GaNPX GaNPX Ordering code GS61008P-TR GS61008P-MR Packing method Tape-and-reel Mini-reel (c) 2009-2015 GaN Systems Inc. This information applies to a product under development. Its characteristics and specifications are subject to change without notice. 1 GS61008P 100V enhancement mode GaN transistor Preliminary Datasheet Electrical Characteristics (Typical values at TCASE= 25C unless otherwise noted) Parameters Symbol Value Units Drain-to-Source Breakdown Voltage BVDSS 100 V 7.4 m 18.5 m 1.6 V 0.5 A 100 A Drain-to-Source On Resistance (TJ = 25C) RDS(ON) Drain-to-Source On Resistance (TJ = 150C) Gate Threshold Voltage VGS(th) Drain to Source Leakage Current (TJ = 25C) IDSS Drain to Source Leakage Current (TJ = 150C) Conditions (Note 3) VGS = 0V ID = 1mA VGS = 6V, TJ = 25C ID = 25A VGS = 6V, TJ = 150C ID =25A VDS = VGS ID = 2mA VDS = 100V VGS = 0V, TJ = 25C VDS = 100V VGS = 0V, TJ = 150C Gate to Source Current IGS 200 A VGS=6V, VDS=0V Gate Resistance RG 1.5 f=1MHz, open drain Input Capacitance CISS 610 Output Capacitance COSS 250 pF Reverse Transfer Capacitance CRSS 15 VDS = 80V VGS = 0V f = 1MHz Effective Output Capacitance, Energy Related (Note 4) CO(ER) 293 pF Effective Output Capacitance, Time Related (Note 5) CO(TR) 360 pF Total Gate Charge QG(TOT) 12.0 nC Gate-to-Source Charge QGS 2.0 nC Gate-to -Drain Charge QGD 2.2 nC Reverse Recovery Charge QRR 0 nC Output Charge QOSS 21 nC Gate plateau voltage Vplat 3.0 V Source-Drain Reverse Voltage VSD 0.15 V Source-Drain Reverse Voltage VSD 2.0 V VGS =0V VDS=0 to 80V ID =constant VGS =0V VDS=0 to 80V VGS=0 to 6V VDS=50V ID=27A VDS = 80V VGS = 6V, TJ = 25C ISD =9A VGS = 0V, TJ = 25C ISD =9A (3) All parameters are specified with the substrate and thermal pad connected to the source (4) Co(ER) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0V to the stated VDS (5) Co(TR) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0V to the stated VDS GS61008P DS Rev 1509044 (c) 2009-2015 GaN Systems Inc. This information applies to a product under development. Its characteristics and specifications are subject to change without notice. 2 GS61008P 100V enhancement mode GaN transistor Preliminary Datasheet Figure 1: GS61008P typical IDS vs. VDS @ TJ = 25 C Figure 2: GS61008P typical IDS vs. VDS @ TJ = 150 C Figure 3: GS61008P typical RDS(on) vs. ID for VGS = 6 V @Tj=25C Figure 4: GS61008P typical RDS(on) vs. ID for VGS = 6V @Tj=150C GS61008P DS Rev 1509044 (c) 2009-2015 GaN Systems Inc. This information applies to a product under development. Its characteristics and specifications are subject to change without notice. 3 GS61008P 100V enhancement mode GaN transistor Preliminary Datasheet Figure 5: GS61008P Safe Operating Area @ Tcase 25 C Figure 6: GS61008P temperature derating Figure 7: GS61008P Transient Thermal Impedance Figure 8 : GS61008P typical transfer characteristic ID vs. VGS GS61008P DS Rev 1509044 (c) 2009-2015 GaN Systems Inc. This information applies to a product under development. Its characteristics and specifications are subject to change without notice. 4 GS61008P 100V enhancement mode GaN transistor Preliminary Datasheet Figure 9: GS61008P Reverse Conduction Characteristics Figure 10 : GS61008P typical input, output and reverse capacitance vs. VDS Figure 11: GS61008P typical gate charge, QG, vs. VGS @ VDS=50V Figure 12: GS61008P Typical COSS Stored Energy GS61008P DS Rev 1509044 (c) 2009-2015 GaN Systems Inc. This information applies to a product under development. Its characteristics and specifications are subject to change without notice. 5 GS61008P 100V enhancement mode GaN transistor Preliminary Datasheet Package Dimensions Recommended Minimum Footprint Note: These pad sizes are the minimums recommended and should only be used as a guideline. Other factors, such as end-user layout, specific application standards and thermal performance must be taken into consideration to define final footprints. www.gansystems.com North America Europe Asia Important Notice - Unless expressly approved in writing by an authorized representative of GaN Systems, GaN Systems components are not designed, authorized or warranted for use in lifesaving, life sustaining, military, aircraft, or space applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or implicitly, to any party any patent rights, licenses, or any other intellectual property rights. GaN Systems standard terms and conditions apply. (c) 2009-2015 GaN Systems Inc. All rights reserved. GS61008P DS Rev 1509044 (c) 2009-2015 GaN Systems Inc. This information applies to a product under development. Its characteristics and specifications are subject to change without notice. 6 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GaN Systems: GS61008P-E05-TY GS61008P-E05-MR