TOSHIBA TDISCRETE/OPTOF 40 DE 0s ?eso OO1bels &b i 9097250 TOSHIBA (DISCRETE/OPTO) 90D 16213 DT-33-35 TOSHIBA GTR MODULE SEMICONDUCTOR : ! MG20G4GL1 MG20G6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. MG20G4GL Unit in om 72 FEATURES : . The Collector is Isolated from Case . 4 or 6 Darlington Transistors including Free Wheeling Diodes are Built-in to 1 package . High DC Current Gain 3 hpp=l00(Min. ) (1,=20A) . Low Satulation Voltage ; 2 Vor(sat 72 (Max. ) (I,=20A) EQUIVALENT CIRCUIT +o wey BY JEDEC _ a a . EIAs _ I - TOSHIBA 2-4BA1A BU oU Weight : 140g Ev O+0 V BY * Cd 4 MG20G6ELI Unit in om , sida 10-PAST-ON-TAB #110 -o o E- 64 S-FAST-ON-TAB #25 25 55 MG20G4GLI1 22 65888 886 6 105 25 iit Ta) AE eo Sale re 86 | JEDEC _ MG20G6EL1 ETAT = TOSHIBA 2-64AlA Weight : 180g TOSHIBA CORPORATION GTIA2A 219 -TOSHIBA {DISCRETE/OPTO} Th DEB iorreso OOibe14 a Bj 9097250 TOSHIBA (DISCRETE/OPTO) ~ 90D 16214 DT-33-35 SEMICONDUCTOR TECHNICAL DATA MG20G4611 MG20G6EL1 HAXIMUM RATINGS (Ta=25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBo 600 v Collector-Emitter Sustaining Voltage VcEX (SUS) 600 Vv Collector-Emitter Sustaining Voltage VcEO(SUS) 450 Vv ; Emitter-Base Voltage VEBO 6 v | . Collector Current De te 20 ims Icp 40 A Forward Current be TF 20 A ims IPM 40 A Base Current : Ip 2 A Collector. Power Dissipation (Tc=25C) Pc 125 W Junction Temperature Tj 150 C Storage Temperature Range Tstg ~40 ~125 C Isolation Voltage Visol 2500 (AC 1 Minute) v Screw Torque - 30 kg-cm ELECTRICAL CHARACTERISTICS (Ta=25C) , CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP.| MAX. | UNIT Collector Cut-off Current IcBo VcB=600V, IE=0 - - 1.0 mA Emitter Cut-off Current LEBO VEB=6V, Ic=0 - - 100 mA Sustaining Voltage Vcz0(SUS} Tc=0.5A, L=40mH ssa} - | - | DC Current Gain hFE Vce=5V, Ic=20A 100 - - soustation toltase Wore | oon tesa. -[- [es Satcrarion Voltage VBE (sat) . ~ - 2.5 V Turn-on Time ton - - 1.0 Switching Time | Storage Time tstg - - 12 | (as Fall Time tf - - 2.0 : Forward Voltage VF Tp=20A, [pz0 - - 1.6 Vv t Ip=20A, Vpg=-2V | Reverse Recovery Time trr . - - 0.7 4S i di/dt=60A/us Thermal Resistance Rth(j-c) - - 1.0 | C/W TOSHIBA CORPORATION STIA2A =-220-TOSHIBA {IDISCRETE/OPTOF 9097250 TOSHIBA (DISCRETE/OPTO) | RTT SEMICONDUCTOR TECHNICAL DATA 40 DEE 9097250 OOlbe15 0 90D 16215 DV 33-375 MG20G4G6L1 MG2O0G6ELI1 BASE-EMITTER SATURATION Vpe(eat) CV) VOLTAGE SWITCHING TIME (#8) & we o aa VBE(sat) Io COMMON EMITTER Ip=Q5A 1 COLLECTOR CURRENT Ig (A) SWITCHING TIME Ig COMMON EMITTER Te=25C Voo= SOV Ip=tOsa te 4 8 1 16 a COLLECTOR CURRENT Ig (A) REVERSE BIAS SOA T4125 -Ip=10A Vpr=-6V 300 6400 6500S: 600 TOSHIBA CORPORATION m 40 < . we o H ef hl 4 E 16 ie 5 a 8 a o 0 COLLECTOR-EMITTER VOLTAGE Vor v) GTIA2A 221 - COLLECTOR REVERSE CURRENT -Ig (A) COLLECTOR CURRENT Ig (A) -Ic Vrco COMMON COLLECTOR Ip=0 50 %* 4 5 an a] pp aa 2 v 16 EMITTER-COLLECTOR VOLTAGE Vpqg (V) 20 SAFE OPERATING AREA SINGLE NONREPETITIVE PULSE Te=25C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE, 100 50 Ig MAX. (PULSED) 30 Ss ANY % m e, o Ig MAX. Yo + + + * 10 L(CONTINUOUS 1 as as 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE Vor (V) 1000TOSHIBA {LDISCRETE/OPTO} 90) DEB 9097250 OOM2Z1L 4 I 9097250 TOSHIBA (DISCRETE/OPTO) 90D 16216 07-33-35 SEMICONDUCTOR wc 20caen1 MG20G6ELI1 TECHNICAL DATA , . Toshiba CE c + COMMON EMITTER To=-40 COMMON EMITTER Te = 25T 100 100 < : 50 & 50 ! s 4 i : 30 4 o 80 it > s i Syl | i o ee C 4\Is / we oa on COLLECTOR-EMITTER VOLTAGE Vogp (V) a COLLECTOR-EMITTER VOLTAGE Vop (V) as Q5 ; a 8682 CAO 48 8 16 2 = 82 re) COLLECTOR CURRENT Ig (A) . COLLECTOR CURRENT I (A) Vcr Ic COMMON EMITTER To =125C hrp I 5000 COMMON EMITTER Vor =5V I Fy a DC CURRENT GAIN eS as 1 3 10 30 COLLECTOR CURRENT Ig (A) COLLECTOR-EMITTER VOLTAGE Vog (V) Po= RSW eer ee ee i COLLECTOR CURRENT Ig (A) : TOSHIBA CORPORATION GTIA2ZA 222-TOSHIBA {DISCRETE/OPTOF 9097250 TOSHIBA CDISCRETE/OPTO) SEMICONDUCTOR TECHNICAL DATA 90D 16217 MG20G4GLI : MG20G6ELI Preegts pepe tig pt Gebe o EEE Lee ives ene a saped AYRE fied -~ Ls dH: moet optes fad Spd ood cle Hrrdao eS). ker (AL Glee wa eneteneedeverlerrpe totem ppm . iq. 7 x Set ciel -$4 mE Li i - p ; i _t i fe F ni fab Pe Fee 80 350," Ko TT. q cea PATEL ; | i t ie ib Saabs Ps 40 DEF} saireso OOlbeL? 3 Ey DT-33-35 TOSHIBA CORPORATION GTItA2A 223- teen ameTOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA (DISCRETE/OPTO) SEMICONDUCTOR TECHNICAL DATA RNa 40 DEB oes O01b21a 5 i 90D 16218 = DT-a3-35 MG20G4GLI MG20G6ELI ri bbop i pdihel bE os Phau ti ws. ry retry TT * v TE ne Ly . dE - WF, we wt { GTIA2A 224- TOSHIBA CORPORATION 0 : i 0?