VSMB14942
www.vishay.com Vishay Semiconductors
Rev. 1.2, 19-Nov-15 1Document Number: 84223
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
DESCRIPTION
VSMB14942 is an infrared, 940 nm, side looking emitting
diode in GaAlAs multi quantum well (MQW) technology
with high radiant power and high speed, molded in
clear, untinted PCB based package (with lens) for surface
mounting (SMD).
APPLICATIONS
• Emitter for remote control
• IR touch panels
• Photointerrupters
• Optical switch
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 3.2 x 2.51 x 1.2
• Peak wavelength: p = 940 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity: = ± 16°
• Suitable for high pulse current operation
• Floor life: 168 h, MSL 3, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns)
VSMB14942 26 ± 16 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMB14942 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Side view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV160 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature According fig. 10, J-STD-020 Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, soldered on PCB RthJA 400 K/W
VSMB14942
www.vishay.com Vishay Semiconductors
Rev. 1.2, 19-Nov-15 2Document Number: 84223
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Forward Voltage vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100
PV - Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
RthJA = 400 K/W
0
20
40
60
80
100
120
0 20 40 60 80 100
IF - Forward Current (mA)
Tamb - Ambient Temperature (°C)
RthJA = 400 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 20 mA, tp = 20 ms VF1.01.181.4 V
IF = 100 mA, tp = 20 ms VF- 1.28 1.6 V
IF = 1 A, tp = 100 μs VF-1.83- V
Temperature coefficient of VFIF = 100 mA TKVF - -0.98 - mV/K
Reverse current VR = 5 V IR- - 10 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 mW/cm2CJ- 116 - pF
Radiant intensity
IF = 20 mA, tp = 20 ms Ie2.8 5.5 8.5 mW/sr
IF = 100 mA, tp = 20 ms Ie-27-mW/sr
IF = 1 A, tp = 100 μs Ie- 210 - mW/sr
Radiant power IF = 70 mA, tp = 20 ms e-28-mW
Temperature coefficient of radiant power IF = 20 mA TKe- -0.32 - %/K
Angle of half intensity -± 16-deg
Peak wavelength IF = 70 mA p920 940 960 nm
Spectral bandwidth IF = 30 mA -30-nm
Temperature coefficient of pIF = 30 mA TKp-0.30-nm/K
Rise time IF = 100 mA, 20 % to 80 % tr-15-ns
Fall time IF = 100 mA, 20 % to 80 % tf-15-ns
1
10
100
1000
1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
IF - Forward Current (mA)
VF - Forward Voltage (V)
tp = 100 μs
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
-60 -40 -20 0 20 40 60 80 100
VF - Forward Voltage (V)
Tamb - Ambient Temperature (°C)
IF = 100 mA
tp = 20 ms
VSMB14942
www.vishay.com Vishay Semiconductors
Rev. 1.2, 19-Nov-15 3Document Number: 84223
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
90
95
100
105
110
115
-60 -40 -20 0 20 40 60 80 100
VF, rel - Relative Forward Voltage (%)
Tamb - Ambient Temperature (°C)
IF = 100 mA
tp = 20 ms
0.1
1
10
100
1000
1 10 100 1000
Ie - Radiant Intensity (mW/sr)
IF - Forward Current (mA)
tp = 100 μs
60
65
70
75
80
85
90
95
100
105
110
115
120
-60 -40 -20 0 20 40 60 80 100
Ie, rel - Relative Radiant Intensity (%)
Tamb - Ambient Temperature (°C)
IF = 100 mA
tp = 20 ms
0
10
20
30
40
50
60
70
80
90
100
800 850 900 950 1000 1050
Ie, rel - Relative Radiant Intensity (%)
λ - Wavelength (nm)
IF = 20 mA
Ie, rel - Relative Radiant Intensity
0.6
80°
0°
0.7
0.4 0.2 0
30°
70°
60°
50°
40°
10° 20°
1.0
0.9
0.8
ϕ - Angular Displacement
VSMB14942
www.vishay.com Vishay Semiconductors
Rev. 1.2, 19-Nov-15 4Document Number: 84223
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOLDER PROFILE
Fig. 10 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, according to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters: VSMB14942
255 °C to 260 °C
10 s max.
6 °C/s max.
3 °C/s max.
3 °C/s max.
150 °C
200 °C
217 °C
60 s to 120 s60 s max.
Time
Temperature
Recommended Solder Pad
1.90 ± 0.15
2.51 ± 0.15 3.20
1.20
LED dice
Cathode mask
0.600.60
Soldering
terminal
1.10
1.60
PC board
Molding
body (lens)
Polarity
-
+
Not indicated tolerances ± 0.1 mm
1.5
(0.059)
1.5
(0.059)
5.0
(0.197)
VSMB14942
www.vishay.com Vishay Semiconductors
Rev. 1.2, 19-Nov-15 5Document Number: 84223
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VSMB14942
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2019 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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