FSAM15SM60A - Fairchild Semiconductor

FSAM15SM60A

Rev. E, August 2003

FSAM15SM60A

SPMTM (Smart Power Module)

General Description

FSAM15SM60A is an advanced smart power module

(SPM) that Fairchild has newly developed and designed to

provide very compact and high performance ac motor

drives mainly targeting medium speed low-power inverter-

driven application like air conditioners. It combines

optimized circuit protection and drive matched to low-loss

IGBTs. Highly effective short-circuit current detection/

protection is realized through the use of advanced current

sensing IGBT chips that allow continuous monitoring of the

IGBTs current. System reliability is further enhanced by the

built-in over-temperature monitoring and integrated under-

voltage lock-out protection. The high speed built-in HVIC

provides opto-coupler-less IGBT gate driving capability that

further reduce the overall size of the inverter system design.

In addition the incorporated HVIC facilitates the use of

single-supply drive topology enabling the FSAM15SM60A

to be driven by only one drive supply voltage without

negative bias. Inverter current sensing application can be

achieved due to the divided negative dc terminals.

Features

• UL Certified No. E209204

• 600V-15A 3-phase IGBT inverter bridge including control

ICs for gate driving and protection

• Divided negative dc-link terminals for inverter current

sensing applications

• Single-grounded power supply due to built-in HVIC

• Typical switching frequency of 5kHz

• Built-in thermistor for over-temperature monitoring

• Inverter power rating of 0.8kW / 100~253 Vac

• Isolation rating of 2500Vrms/min.

• Very low leakage current due to using ceramic substrate

• Adjustable current protection level by varying series

resistor value with sense-IGBTs

Applications

• AC 100V ~ 253V 3-phase inverter drive for small power

(0.8kW) ac motor drives

• Home appliances applications requiring medium

switching frequency operation like air conditioners drive

system

• Application ratings:

- Power : 0.8kW / 100~253 Vac

- Switching frequency : Typical 5kHz (PWM Control)

- 100% load current : 5.0A (Irms)

- 150% load current : 7.5A (Irms) for 1 minute

External View

Fig. 1.

Top View Bottom View

60mm

31mm

FSAM15SM60A

Rev. E, August 2003

Integrated Power Functions

• 600V-15A IGBT inverter for 3-phase DC/AC power conversion (Please refer to Fig. 3)

Integrated Drive, Protection and System Control Functions

• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting

Control circuit under-voltage (UV) protection

Note) Available bootstrap circuit example is given in Figs. 14 and 15.

• For inverter low-side IGBTs: Gate drive circuit, Short-Circuit (SC) protection

Control supply circuit under-voltage (UV) protection

• Temperature Monitoring: System over-temperature monitoring using built-in thermistor

Note) Available temperature monitoring circuit is given in Fig. 15.

• Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side control supply circuit)

• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input

Pin Configuration

Fig. 2.

Top View

(1) VCC(L)

(2) com(L)

(3) IN(UL)

(4) IN(VL)

(5) IN(WL)

(6) com(L)

(7) FO

(8) CFOD

(9) CSC

(10) RSC

(11) IN(UH)

(12) VCC(UH)

(13) VB(U)

(14) VS(U)

(15) IN(VH)

(16) com(H)

(17) VCC(VH)

(18) VB(V)

(19) VS(V)

(20) IN(WH)

(21) VCC(WH)

(22) VB(W)

(23) VS(W)

(24) VTH

(25) RTH

(26) NU

(27) NV

(28) NW

(29) U

(30) V

(31) W

(32) P

Case Temperature (TC)

Detecting Point

Ceramic Substrate

(1) VCC(L)

(2) com(L)

(3) IN(UL)

(4) IN(VL)

(5) IN(WL)

(6) com(L)

(7) FO

(8) CFOD

(9) CSC

(10) RSC

(11) IN(UH)

(12) VCC(UH)

(13) VB(U)

(14) VS(U)

(15) IN(VH)

(16) com(H)

(17) VCC(VH)

(18) VB(V)

(19) VS(V)

(20) IN(WH)

(21) VCC(WH)

(22) VB(W)

(23) VS(W)

(24) VTH

(25) RTH

(26) NU

(27) NV

(28) NW

(29) U

(30) V

(31) W

(32) P

(1) VCC(L)

(2) com(L)

(3) IN(UL)

(4) IN(VL)

(5) IN(WL)

(6) com(L)

(7) FO

(8) CFOD

(9) CSC

(10) RSC

(11) IN(UH)

(12) VCC(UH)

(13) VB(U)

(14) VS(U)

(15) IN(VH)

(16) com(H)

(17) VCC(VH)

(18) VB(V)

(19) VS(V)

(20) IN(WH)

(21) VCC(WH)

(22) VB(W)

(23) VS(W)

(24) VTH

(25) RTH

(26) NU

(27) NV

(28) NW

(29) U

(30) V

(31) W

(32) P

Case Temperature (TC)

Detecting Point

Ceramic Substrate

FSAM15SM60A

Rev. E, August 2003

Pin Descriptions

Pin Number Pin Name Pin Description

CC(L) Low-side Common Bias Voltage for IC and IGBTs Driving

2COM

(L) Low-side Common Supply Ground

3IN

(UL) Signal Input for Low-side U Phase

4IN

(VL) Signal Input for Low-side V Phase

5IN

(WL) Signal Input for Low-side W Phase

6COM

(L) Low-side Common Supply Ground

FO Fault Output

FOD Capacitor for Fault Output Duration Time Selection

SC Capacitor (Low-pass Filter) for Short-Circuit Current Detection Input

10 RSC Resistor for Short-Circuit Current Detection

11 IN(UH) Signal Input for High-side U Phase

12 VCC(UH) High-side Bias Voltage for U Phase IC

13 VB(U) High-side Bias Voltage for U Phase IGBT Driving

14 VS(U) High-side Bias Voltage Ground for U Phase IGBT Driving

15 IN(VH) Signal Input for High-side V Phase

16 COM(H) High-side Common Supply Ground

17 VCC(VH) High-side Bias Voltage for V Phase IC

18 VB(V) High-side Bias Voltage for V Phase IGBT Driving

19 VS(V) High-side Bias Voltage Ground for V Phase IGBT Driving

20 IN(WH) Signal Input for High-side W Phase

21 VCC(WH) High-side Bias Voltage for W Phase IC

22 VB(W) High-side Bias Voltage for W Phase IGBT Driving

23 VS(W) High-side Bias Voltage Ground for W Phase IGBT Driving

24 VTH Thermistor Bias Voltage

25 RTH Series Resistor for the Use of Thermistor (Temperature Detection)

26 NUNegative DC–Link Input for U Phase

27 NVNegative DC–Link Input for V Phase

28 NWNegative DC–Link Input for W Phase

29 U Output for U Phase

30 V Output for V Phase

31 W Output for W Phase

32 P Positive DC–Link Input

FSAM15SM60A

Rev. E, August 2003

Internal Equivalent Circuit and Input/Output Pins

Note:

1) Inverter low-side is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving, current sensing and

protection functions.

2) Inverter power side is composed of four inverter dc-link input pins and three inverter output pins.

3) Inverter high-side is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.

Fig. 3.

Bottom View

COM(L)

VCC

IN(UL)

IN(VL)

IN(W L)

VFO

C(FOD)

C(SC)

OUT(UL)

OUT(VL)

OUT(WL)

(26) NU

(27) NV

(28) NW

(29) U

(30) V

(31) W

(32) P

(23) VS(W )

(22) VB(W )

(19) VS(V)

(18) VB(V)

(9) CSC

(8) CFOD

(7) VFO

(5) IN(W L)

(4) IN(VL)

(3) IN(UL)

(2) COM(L)

(1) VCC(L)

(10) RSC

(25) RTH

(24) VTH

(6) COM(L)

VCC

OUT

COM

OUT

COM

VCC

OUT

COM

(21) VCC(WH)

(20) IN(W H)

(17) VCC(VH)

(15) IN(VH)

(16) COM(H)

(14) VS(U)

(13) VB(U)

(12) VCC(UH)

(11) IN(UH)

THERMISTOR

FSAM15SM60A

Rev. E, August 2003

Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)

Inverter Part

Note:

1. It would be recommended that the average junction temperature should be limited to TJ ≤ 125°C (@TC ≤ 100°C) in order to guarantee safe operation.

Control Part

Total System

Item Symbol Condition Rating Unit

Supply Voltage VPN Applied between P- NU, NV, NW450 V

Supply Voltage (Surge) VPN(Surge) Applied between P- NU, NV, NW500 V

Collector-Emitter Voltage VCES 600 V

Each IGBT Collector Current ± ICTC = 25°C 15 A

Each IGBT Collector Current ± ICTC = 100°C 12 A

Each IGBT Collector Current (Peak) ± ICP TC = 25°C ,

Instantaneous Value (Pulse)

30 A

Collector Dissipation PCTC = 25°C per One Chip 50 W

Operating Junction Temperature TJ(Note 1) -20 ~ 125 °C

Item Symbol Condition Rating Unit

Control Supply Voltage VCC Applied between VCC(UH), VCC(VH), VCC(WH) - COM(H),

VCC(L) - COM(L)

20 V

High-side Control Bias Voltage VBS Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) -

VS(W)

20 V

Input Signal Voltage VIN Applied between IN(UH), IN(VH), IN(WH) - COM(H)

IN(UL), IN(VL), IN(WL) - COM(L)

-0.3 ~ VCC+0.3 V

Fault Output Supply Voltage VFO Applied between VFO - COM(L) -0.3 ~ VCC+0.3 V

Fault Output Current IFO Sink Current at VFO Pin 5 mA

Current Sensing Input Voltage VSC Applied between CSC - COM(L) -0.3 ~ VCC+0.3 V

Item Symbol Condition Rating Unit

Self Protection Supply Voltage Limit

(Short-Circuit Protection Capability)

VPN(PROT) VCC = VBS = 13.5 ~ 16.5V

TJ = 25°C, Non-repetitive, less than 6µs

400 V

Module Case Operation Temperature TCNote Fig.2 -20 ~ 100 °C

Storage Temperature TSTG -20 ~ 125 °C

Isolation Voltage VISO 60Hz, Sinusoidal, AC 1 minute, Connection

Pins to Heat-sink Plate

2500 Vrms

FSAM15SM60A

Rev. E, August 2003

Absolute Maximum Ratings

Thermal Resistance

Note:

2. For the measurement point of case temperature(TC), please refer to Fig. 2.

3. The thickness of thermal grease should not be more than 100um.

Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)

Inverter Part

Note:

4. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition

internally. For the detailed information, please see Fig. 4.

Item Symbol Condition Min. Typ. Max. Unit

Junction to Case Thermal

Resistance

Rth(j-c)Q Each IGBT under Inverter Operating Condition

--2.5°C/W

Rth(j-c)F Each FWDi under Inverter Operating Condition - - 3.6 °C/W

Contact Thermal

Resistance

Rth(c-h) Ceramic Substrate (per 1 Module)

Thermal Grease Applied (Note 3)

- - 0.06 °C/W

Item Symbol Condition Min. Typ. Max. Unit

Collector - Emitter

Saturation Voltage

VCE(SAT) VCC = VBS = 15V

VIN = 0V

IC = 15A, TJ = 25°C - - 2.3 V

FWDi Forward Voltage VFM VIN = 5V IC = 15A, TJ = 25°C - - 2.5 V

Switching Times tON VPN = 300V, VCC = VBS = 15V

IC = 15A, TJ = 25°C

VIN = 5V ↔ 0V, Inductive Load

(High, Low-side)

(Note 4)

-0.32- us

tC(ON) -0.15- us

tOFF -0.83- us

tC(OFF) -0.39- us

trr -0.13- us

Collector - Emitter

Leakage Current

ICES VCE = VCES, TJ = 25°C - - 250 µA

FSAM15SM60A

Rev. E, August 2003

Fig. 4. Switching Time Definition

Fig. 5. Experimental Results of Switching Waveforms

Test Condition: Vdc=300V, Vcc=15V, L=500uH (Inductive Load), TJ=25°

°°

°C

trr

VCE

VIN

tON tC(ON)

VIN (O N )

100% IC

(a) Turn-on (b) Turn-off

ICVCE

VIN

tOFF tC(OFF)

VIN(OFF)

VCE : 100V/div. IC: 5A/div.

time : 0.1us/div.

(a) turn-on

VCE : 100V/div.IC: 5A/div.

time : 0.1us/div.

(b) turn-off

(a) Turn-on (b) Turn-off

FSAM15SM60A

Rev. E, August 2003

Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)

Control Part

Note:

5. Short-circuit current protection is functioning only at the low-sides. It would be recommended that the value of the external sensing resistor (RSC) should be

selected around 56 Ω in order to make the SC trip-level of about 22.5A at the shunt resistors (RSU,RSV,RSW) of 0Ω . For the detailed information about the

relationship between the external sensing resistor (RSC) and the shunt resistors (RSU,RSV,RSW), please see Fig. 7.

6. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]

7. TTH is the temperature of thermistor itself. To know case temperature (TC), please make the experiment considering your application.

Recommended Operating Conditions

Item Symbol Condition Min. Typ. Max. Unit

Quiescent VCC Supply Cur-

rent

IQCCL VCC = 15V

IN(UL, VL, WL) = 5V

VCC(L) - COM(L) --26mA

IQCCH VCC = 15V

IN(UH, VH, WH) = 5V

VCC(UH), VCC(VH), VCC(WH) -

COM(H)

- - 130 uA

Quiescent VBS Supply Cur-

rent

IQBS VBS = 15V

IN(UH, VH, WH) = 5V

VB(U) - VS(U), VB(V) -VS(V),

VB(W) - VS(W)

- - 420 uA

Fault Output Voltage VFOH VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V

VFOL VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 1.1 V

Short-Circuit Trip Level VSC(ref) VCC = 15V (Note 5) 0.45 0.51 0.56 V

Sensing Voltage

of IGBT Current

VSEN @ RSC = 56 Ω, RSU = RSV = RSW = 0 Ω and IC = 22.5A

(Note Fig. 7)

0.45 0.51 0.56 V

Supply Circuit Under-

Voltage Protection

UVCCD Detection Level 11.5 12 12.5 V

UVCCR Reset Level 12 12.5 13 V

UVBSD Detection Level 7.3 9.0 10.8 V

UVBSR Reset Level 8.6 10.3 12 V

Fault Output Pulse Width tFOD CFOD = 33nF (Note 6) 1.4 1.8 2.0 ms

ON Threshold Voltage VIN(ON) High-Side Applied between IN(UH), IN(VH),

IN(WH) - COM(H)

--0.8V

OFF Threshold Voltage VIN(OFF) 3.0 - - V

ON Threshold Voltage VIN(ON) Low-Side Applied between IN(UL), IN(VL),

IN(WL) - COM(L)

--0.8V

OFF Threshold Voltage VIN(OFF) 3.0 - - V

Resistance of Thermistor RTH @ TTH = 25°C (Note Fig. 6) (Note 7) - 50 - kΩ

@ TTH = 100°C (Note Fig. 6) (Note 7) - 3.4 - kΩ

Item Symbol Condition Value Unit

Min. Typ. Max.

Supply Voltage VPN Applied between P - NU, NV, NW- 300 400 V

Control Supply Voltage VCC Applied between VCC(UH), VCC(VH), VCC(WH) -

COM(H), VCC(L) - COM(L)

13.5 15 16.5 V

High-side Bias Voltage VBS Applied between VB(U) - VS(U), VB(V) - VS(V),

VB(W) - VS(W)

13.5 15 16.5 V

Blanking Time for Preventing

Arm-short

tdead For Each Input Signal 3 - - us

PWM Input Signal fPWM TC ≤ 100°C, TJ ≤ 125°C - 5 - kHz

Input ON Threshold Voltage VIN(ON) Applied between IN(UH), IN(VH), IN(WH) -

COM(H), IN(UL), IN(VL), IN(WL) - COM(L)

0 ~ 0.65 V

Input OFF Threshold Voltage VIN(OFF) Applied between IN(UH), IN(VH), IN(WH) -

COM(H), IN(UL), IN(VL), IN(WL) - COM(L)

4 ~ 5.5 V

FSAM15SM60A

Rev. E, August 2003

Fig. 6. R-T Curve of The Built-in Thermistor

Fig. 7. RSC Variation by change of Shunt Resistors (RSU, RSV, RSW) for Short-Circuit Protection

(1)@ around 100% Rated Current Trip (IC ·=· 15A)

(2)

@ around 150% Rated Current Trip (IC ·=· 22.5A)

20 30 40 50 60 70 80 90 100 110 120 130

R-T Curve

Resistance [㏀]

Temperature TTH [℃]

0.00 0.02 0.04 0.06 0.08 0.10

100

120

(2)

(1)

RSC [Ω]

RSU,RSV,RSW [Ω]

FSAM15SM60A

Rev. E, August 2003

Mechanical Characteristics and Ratings

Fig. 8. Flatness Measurement Position of The Ceramic Substrate

Note:

8. Do not make over torque or mounting screws. Much mounting torque may cause ceramic cracks and bolts and Al heat-fin destruction.

9. Avoid one side tightening stress. Fig.9 shows the recommended torque order for mounting screws. Uneven mounting can cause the SPM ceramic substrate to

be damaged.

Fig. 9. Mounting Screws Torque Order

Item Condition Limits Unit

Min. Typ. Max.

Mounting Torque Mounting Screw: M4

(Note 8 and 9)

Recommended 10Kg•cm 8 10 12 Kg•cm

Recommended 0.98N•m 0.78 0.98 1.17 N•m

Ceramic Flatness Note Fig.8 0 - +120 um

Weight -35- g

(+)

Datum Line

(+)

Datum Line

FSAM15SM60A

Rev. E, August 2003

Time Charts of SPMs Protective Function

P1 : Normal operation - IGBT ON and conducting current

P2 : Under-Voltage detection

P3 : IGBT gate interrupt

P4 : Fault signal generation

P5 : Under-Voltage reset

P6 : Normal operation - IGBT ON and conducting current

Fig. 10. Under-Voltage Protection (Low-side)

P1 : Normal operation - IGBT ON and conducting current

P2 : Under-Voltage detection

P3 : IGBT gate interrupt

P4 : No fault signal

P5 : Under-Voltage reset

P6 : Normal operation - IGBT ON and conducting current

Fig. 11. Under-Voltage Protection (High-side)

Internal IGBT

Gate-Emitter Voltage

Input Signal

Output Current

Fault Output Signal

Control Supply Voltage

UV detect

UV reset

Input Signal

Output Current

Fault Output Signal

VBS

UV detect

UV reset

FSAM15SM60A

Rev. E, August 2003

P1 : Normal operation - IGBT ON and conducting current

P2 : Short-Circuit current detection

P3 : IGBT gate interrupt / Fault signal generation

P4 : IGBT is slowly turned off

P5 : IGBT OFF signal

P6 : IGBT ON signal - but IGBT cannot be turned on during the fault Output activation

P7 : IGBT OFF state

P8 : Fault Output reset and normal operation start

Fig. 12. Short-Circuit Current Protection (Low-side Operation only)

Internal IGBT

Gate-Emitter Voltage

Input Signal

Output Current

Sensing Voltage

Fault Output Signal

SC Reference

Voltage (0.5V)

RC Filter Delay

SC Detection

FSAM15SM60A

Rev. E, August 2003

Note:

1) It would be recommended that by-pass capacitors for the gating input signals, IN(UL), IN(VL), IN(WL), IN(UH), IN(VH) and IN(WH) should be placed on the SPM pins

and on the both sides of CPU and SPM for the fault output signal, VFO, as close as possible.

2) The logic input is compatible with standard CMOS or LSTTL outputs.

3) RPLCPL/RPHCPH/RPFCPF coupling at each SPM input is recommended in order to prevent input/output signals’ oscillation and it should be as close as possible to

each of SPM pins.

Fig. 13. Recommended CPU I/O Interface Circuit

Note:

It would be recommended that the bootstrap diode, DBS, has soft and fast recovery characteristics.

Fig. 14. Recommended Bootstrap Operation Circuit and Parameters

CPU

COM

5V-Line

1.2nF0.47nF1nF

Ω

4.7k Ω

4.7k

IN(UL) IN (VL) IN(WL)

IN(UH) IN(VH) IN(WH)

VFO

Ω

100

Ω

100

Ω

100

1nF

SPM

Ω

RPF RPL RPH

CPF CPL CPH

15V-Line

20Ω

33uF 0.1uF

470uF 0.1uF

One-Leg Diagram of SPM

Vcc

COM

Vcc

COM

OUT

Inverter

Output

These Values depend on PWM Control Algorithm

DBS

FSAM15SM60A

Rev. E, August 2003

Note:

1) RPLCPL/RPHCPH /RPFCPF coupling at each SPM input is recommended in order to prevent input signals’ oscillation and it should be as close as possible to each

SPM input pin.

2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is

possible.

3) VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kΩ resistance. Please

refer to Fig. 15.

4) CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended.

5) VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin8) and COM(L)(pin2). (Example : if CFOD = 33 nF, then

tFO = 1.8 ms (typ.)) Please refer to the note 6 for calculation method.

6) Each input signal line should be pulled up to the 5V power supply with approximately 4.7kΩ (at high side input) or 2kΩ (at low side input) resistance (other RC

coupling circuits at each input may be needed depending on the PWM control scheme used and on the wiring impedance of the system’s printed circuit board).

Approximately a 0.22~2nF by-pass capacitor should be used across each power supply connection terminals.

7) To prevent errors of the protection function, the wiring around RSC, RF and CSC should be as short as possible.

8) In the short-circuit protection circuit, please select the RFCSC time constant in the range 3~4 µs.

9) To enhance the noise immunity, CSC pin should be connected to the external circuit through a series resistor, RCSC, which is approximately 390Ω. RSCS should

be connected to CSC pin as close as possible.

10)Each capacitor should be mounted as close to the pins of the SPM as possible.

11)To prevent surge destruction, the wiring between the smoothing capacitor and the P&N pins should be as short as possible. The use of a high frequency non-

inductive capacitor of around 0.1~0.22 uF between the P&N pins is recommended.

12)Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and

the relays. It is recommended that the distance be 5cm at least.

Fig. 15. Typical Application Circuit

COM(L)

VCC

IN(UL)

IN(VL)

IN(WL )

VFO

C(FOD)

C(SC)

OUT(UL)

OUT(VL)

OUT(WL)

NU (26)

NV (27)

NW (28)

U (29)

V (30)

W (31)

P (32)

(23) VS(W)

(22) VB(W)

(19) VS(V)

(18) VB(V)

(9) CSC

(8) CFOD

(7) VFO

(5) IN(W L)

(4) IN(V L)

(3) IN(U L)

(2) COM (L)

(1) VCC(L)

(10) R SC

VTH (24)

RTH (25)

(6) COM(L)

VCC

OUT

COM

OUT

COM

VCC

OUT

COM

(21) VCC(WH)

(20) IN(W H)

(17) VCC(VH)

(15) IN(VH)

(16) C OM(H )

(14) VS(U)

(13) VB(U)

(12) VCC(UH)

(11) IN(UH)

Fault

15 V line

CBS CBSC

RBS DBS

CBS CBSC

RBS DBS

CBS CBSC

RBS DBS

CSP15 CSPC15

CFOD

5V line

RPF

CPL

CBPF

RPL

CPL

5V line

CPH

RPH

CPH

RPH

CPH

RPH



Vdc

CDCS

5V line

RTH CSP05

CSPC05

THERMISTOR

Temp. Monitoring

Gating U H

Gating VH

Gating W H

Gating VH

Gating U H

CPF

RFU

RFV

RFW

RSU

RSV

RSW

CFU

CFV

CFW

W-Phase Current

V-Phase Current

U-Phase Current

CSC

RSC

RCSC

FSAM15SM60A

Rev. E, August 2003

Detailed Package Outline Drawings

60.0 ±0.5 0

53.0 ±0.3 0

(46.60)

19.86±0.30

28.0 ±0.3 0

31.0 ±0. 50

13.6

±0.30

(17.00)

(3.30)

#23

#24

#32

28x2.00 ±0.30=(56.0)

(2.00)

2.00 ±0.3 0

0.40

0.60 ±0.10

MAX1.05

0.40

0.60 ±0.10

MAX1.00

(

10.14

)

11.0

±0.30

3x7.62

±0.30

=(22.86)

3x4.0

±0.30

=(12.0

)

2.00

±0.30

(3.70)

(3.50)

MAX8.20

MAX1.00

0.80

1.30±0.10

MAX3.20

0.80

1.30±0.10

MAX2.50

0.40

0.60±0.10

MAX1.60

(34.80)

Ø4.30

36.05 ±0.50

7.20 ±0.5

12.30 ±0.5

(3°~5° )

0.70

-0.05

+0.10

SPM32-AA

Dimensions in Millimeters

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY

ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF F AIRCHILD SEMICONDUCTOR CORPORA TION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC

OPTOPLANAR™

PACMAN™

POP™

F ACT Quiet Series™

FAST

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

I2C™

ImpliedDisconnect™

ISOPLANAR™

Rev. I5

ACEx™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E2CMOSTM

EnSignaTM

FACT™

Power247™

PowerTrench

QFET

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

SILENT SWITCHER

SMART ST ART™

SPM™

Stealth™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic

TINYOPTO™

TruTranslation™

UHC™

UltraFET

VCX™

Across the board. Around the world.™

The Power Franchise™

Programmable Active Droop™