SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR3060CT
MBRB3060CT
MBR3060CT-1
Technical Data
Data Sheet 3206, Rev.B
MBR3060CT/MBRB3060CT/MBR3060CT-1
SCHOTTKY RECTIFIER
Applications:
•
••
• Switching power suppl y •
••
• Conve rt ers •
••
• Free-Wheeling diodes •
••
• Reverse battery protection
Features:
• 150 °
°°
°C TJ operation
• Center tap configuration
• Low forwar d voltage dr op
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
• Hig h fr e quenc y operation
• Guard ring for enhanced ruggedness and long term reliability
Mechanical Dimensions: In Inches / mm
TO-220AB
Case styles
MBR3060CT
TO-220AB
MBRB3060CT
D2PAK
MBR3060CT-1
TO-262
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR3060CT
MBRB3060CT
MBR3060CT-1
Data Sheet 3206, Rev. B D2PAK
10.16(0.400)
REF.
15.49(0.610)
14.73(0.580)
1.40(0.055)
1.14(0.045)
3
×
8.90(0.350)
8.50(0.335)
2
×
0.93(0.037)
0.69(0.027)
4.69(0.185)
4.20(0.165)
1.32(0.052)
1.22(0.048)
5.28(0.208)
4.78(0.188)
5.08(0.200)REF.
0.55(0.022)
0.46(0.018)
BASE
COMMON
CATHODE
ANODE 1 ANODE 2
CATHODE
COMMON
1.17(0.046)
1.37(0.054)
1.30(0.051)
1.70(0.067)
TO-262
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR3060CT
MBRB3060CT
MBR3060CT-1
Data Sheet 3206, Rev. B
Maximum Ratings:
Characteristics Symbol Condition Max. Units
Peak Inverse Voltage VRWM - 60 V
Max. Average Forward IF(AV) 50% duty cycle @TC = 95°C,
rectangular wave form 30 A
Max. Peak One Cycle Non-
Repetiti ve Surge Current
(per leg) IFSM 8.3 ms, half Sine pulse 200 A
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
Max. Forward Voltage Drop
(per leg) * VF1 @ 30A, Pulse, TJ = 25 °C
0.84
V
V
F2 @ 30A, Pulse, TJ = 125 °C 0.72
V
Max. Reverse Current (per
leg) * IR1 @VR = rated VR
TJ = 25 °C 5.0 mA
I
R2 @VR = rated VR
TJ = 100 °C 100 mA
Max. Junction Capacitance
(per leg) CT @VR = 4V, TC = 25 °C
fSIG = 1MHz 700 pF
Typica l Series Inductance
(per leg) LS Measured lead to lead 5 mm from
package body 8.0 nH
Max. Voltage Rate of Change dv/dt - 10,000 V/µs
* Pulse Width < 300µs, Duty Cycle <2%
Thermal -Mec hanic al Spe cif ica tions:
Characteristics Symbol Condition Specification Units
Max. Junction Temperature TJ - -55 to +150
°C
Max. Storage Temperature Tstg - -55 to +150
°C
Maximum Thermal
Resistance Junction to Case
RθJC DC operation 2.0 °C/W
Maximum Thermal
Resistance, Case to Heat
Sink
RθJA DC operation 60 °C/W
Approximate Weight wt - 2 g
Mounting Torque TM - 6(Min.)
12(Max.) Kg-cm
Case Style TO-220AB D2PAK TO-262
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR3060CT
MBRB3060CT
MBR3060CT-1
Technical Data
Data Sheet 3206, Rev. B
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the lat est
version of the datasheet(s).
2- In cases where extremely high reliabil i t y is requi red (such as use in nuclear power control, aeros pace and aviati on, tr affic equipm ent ,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of us ers’ fail -s a fe prec aut ions or other arrangement .
3- In no event shall Sensi t ron Sem i c onduc t or be liabl e for any damages that may result from an acc i dent or any other caus e during
operation of the user’s units acc ording to t he datas heet( s ). Sensi t ron Sem i c onduc tor assumes no respons i bil i t y for any int ell ec tual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting
from us e at a value exceeding the absolut e m aximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s ) may not be reproduced or dupli cated, in any form, in whole or part, without the expressed writ ten perm is s i on of
Sensit ron S em i c onduc tor.
7- The products (tec hnolo gies ) descr ibed in the datas heet( s ) are not to be provided to any party whose purpose in their application will
hinder main tenanc e of int ernat ional peac e and safet y nor are they to be applied to that purpose by their direc t purc hasers or any third
party. When exporting these products (t ec hnologi es ), the nec es s ary procedures are to be taken in accor danc e with related laws and
regulations.
