KL KL KL KM KM KM KM KM 2865 KM 41C1000P-10...12 KM 41C1000Z-... KM 41 01001... KM 41 C1002... KM 44 C256P-10...12 KM 44 C256Z-... KM 44 C258 ... KML110 BAY... KM 9010... KM 904(0..... KM 905(D.... KM 917(D... KM 918(D...H) KM 928(A,B) KM 934(B.....0) KM 935(B....0) KMOSt KM 2816 A KM 2817 A KM 2864 A,AH KM 2865 A,AH KM 4164 A-12...-20 KM 4164 B-10...-15 KN 6264(A,AL.L)-.. KM 9014(A....D) KM 9015(A....D} KM 41256 AJ-... KM 41256AP-10...-15 KM 41256 AZ-... KM 41287 ... KM 41464 Ade... KM 41464AP-12...-15 KMM 48256...591001 KMZ 104... KN....KS KN KN KN 2222 KRA 101M KRA 101$ KRA 102 M KRA 102 S KRA 103 M KRA 103 $ KRA 104M KRA 104 KRA 105 M KRA 105 S KRA 106 M KRA 106 S KRA 107M KRA 107S KRA 108 M KRA 108 KRA 109 M KRA 109S KRA 110M KRA 1108 KRA 111M KRA 1118 KRA 112M KRA 1128 KRA 113M KRA 1138 KRA 114M KRA 1148 ~~ Sam Si-P =28A1510 (SMD-Marking) 35 SOT-23 >28A1510 Si-P =28B805-KL (SMD-Marking} 39 SOQT-89 28805 N-FET =KTK 211-L (SMD-Marking} 35 SOT-23 >KTK 211 Si-P =2$B805-KM (SMD-Marking) 39 S0T-89 2SB805 MOS-N-FET-e =2SK2009 (SMD-Marking) 35 SOT-23 28K2009 _MOS-N-FET-e =BST 80 (SMD-Marking) 39 SOT-89 7 >BST 80 EEPROM-IC CMOS, 8192 x 8 Bit, 5V, 150...250ns 28-DIP -.. 28064... 7 Sam ___*EEPROM-IC__ CMOS, 8192 x 8 Bit, 5V, 150...250ns_ 28-DIP ss 28065... _ Sam CMOS-dRAM-IC 1048576 x 1 Bit, 100...120ns, Fast Page Mode 18-DIP - CMOS-dRAM-IC=KM 41C1000P-.. 20-SQP - Sam CMOS-dRAM-IC=KM 41 C1000...: Nibble Mode - Sam CMOS-dRAM-IC=KM 41 1000...: Static Column Mode - Sam CMOS-dRAM-IC262144 x 4 Bit, 100...120ns, Fast Page Mode 20-DIP ... 424256... CMOS-dRAM-IC=KM 44 C256P...: 20-SQP Sam CMOS-dRAM-IC=KM 44 C256. ..: Static Column Mode ee _ 424258... _ Phi Sensar Magnetfeld-/Magnetic Field Sensor _. - ; . Mic sSi-N AM, 25/20V, 0,14, 0,3W, 140MHz Te, 8a T0-92,106 BF 255 7d BF 240...241, BF 254...255, 2SC2210,++ Mic Si-N LF Out, 25/20V, 0,5A, 0,5W, 200MHz {KM905 7e T0-92 BC 337 7a BC 337...338, BC 635, BC 637, 2SC3377,++ Mic Si-P LF Out, 25/20V, 0,5A, 0,5W, 120MHz_ {KM904 fe TO-92 BC 327 7a BC 327...328, BC 636, BC 638, 2SA1515,++ Mic Si-N AM/FM IF, 25/20V, 0,05A, 0,25W, 210MHz 7e, 8a T0-92,-106 BF 255 7d BF 240...241, BF 254...255, 2802210,++ Mic Si-N FM, 20/12V, 0,054, 0,25W, 450MHz Te, 8a T0-92,-106 BF 255 7d BF 240...241, BF 254...255, 2862210,++ Mic _SI-N VHF/UHF, 25/20, 0,054, 800MHz, F=2dB(200MHz) 7e,8a -_ T0-92,-106 - 282570A if BF 377...378, BF 763, 2502498, 2803777,++ Mic Si-N Uni, 35/30V, 0,5A, 0,5W, 180MHz {KM935. 7e TO-92 BC 337 7a BC 337...338, BC 635, BC 637, 2803377,++ Mic Si-P Uni, 35/30V, 0,5A, 0,5W, 180MHz {KM934 7e TO-92 BC 327 7a BC 327...328, BC 636, BC 638, 2SC1515,++ Si-P =BC 559 7 BC 560 7a BC 559 _ sam EEPROM-IC = 2048 x 8 Bit, 5V, 250...350ns 24-DIP . 2816... Sam EEPROM-IC =. 2048 x 8 Bit, 5V, 250...350ns 28-DIP . 2817... Sam EEPROM-IC 892 x 8Bit, 5V, 200...300ns, Byte Write<10(AH<2)ms 28-DIP .. 2864... Sam EEPROM-IC 8192 x 8Bit, 5V, 200...300ns, Byte Write<10(AH<2)ms _-28-DIP _ 2865... a Sam dRAM-IC 65536x1 Bit, 120...200ns 16-DIP . 4164... Sam ss dRAM-IG__(65536x1 Bit, 100...150ns 16-DIP i 4164. oe Sam ____ CMOS-sRAM-IChi-speed, 8192 x 8 Bit, <100... 150ns, L=lo-current 28-DIP 6164... ; _ Mic Si-N Uni, 25/20V, 0,1, 0,3W, 140MHz {KM9015 7e, 8a T0-92,-106 BC 546 7a BC 168, BC 183, BC 238, BC 548, 2SD767++ Mic Si-P Uni, 25/20V, 0,18, 0,3W,120MHz {KM9014_7e, 8a TO-92,-106 BC 556 Ta BC 213, BC 258, BC 308, BC 558, 2SB725++ dRAM-IC =KM 41256AP...: 18-PLOC Sam dRAN-IC 262144x1 Bit, 100...150ns, Page Mode 16-DIP . 41256... dRAM-IC =KM 41256AP...: 16-SQP sam dRAM-IC =KM 41257...: Nibble Mode .. 41257... dRAM-IC =KM 41464 AP...: 18-PLCC . 4464... Sam dRAM-IC 65536 x 4 Bit, 120...150ns, TTL Tristate Out 18-DIP . 4464... SRAMEIC SKM AT4B4AP. _ 20-80P oe cn M464. an _Sam CMOS-sRAM-IC hi-speed, 32768 x 8 Bit, <100...150ns, L=lo-current 28-DIP oe 61256... _ Sam dgRAM-IC Speichermodule/Memory Modules SIP.SIMM a _ ee Phi Sensor Magnetfeld-/Magnetic Field Sensor 4-SIP_ MOS-P-FET-e =2SJ305:-(SMD-Marking) 35 SOT-23 >28J305 a S-N-FET-e__ =BST 84 (SMD-Marking) 39s SOT-89 - BST 84 ee _ =2N2220 / oe ~2N2222 2N2222 ee =2SK211-0 (SMD-Marking) 35 SOT-23 >28K211 N-FET =2$K881-0 (SMD-Marking) 35(2mm) SOT-323 >28K881 MOS-N-FET-e =BST 86 (SMD-Marking) 39 SOT-89 >BST 86 Si-P =KTA1001-0 (SMD-Marking) 39 SOT-89 >KTA 1001 N-FET =KTK 211-0 (SMD-Marking) 35 SOT-23 >KTK 211 Si-P =2$B806-KP (SMD-Marking) 39 SOT-89 >2$B806 MOS-N-FET-e =2SK2033 (SMD-Marking} 35 $0T-23 28K2033 MOS-N-FET-e =2SK2034 (SMD-Marking} 35(2mm) $0T-323 >2SK2034 MOS-N-FET-e =25K2035 (SMO-Marking} 35(1,6mm) SS Mini >28K2035 Si-P =2SB806-KQ (SMD-Marking) 39 SOT-89 >2SB806 MOS-P-FET-e =25J343 (SMD-Marking) 35 SOT-23 >28J343 MOS-P-FET-e =280344 (SMD-Marking) 35(2mm) SQT-323 28J344 Si-P =2SB806-KR (SMD-Marking) oo 39 SOT-89 -2SB806 Kec Si-P+R S, Rb=Rbe=4,7kQ, SOV, 0,1A {KRC101M 7c TO-92 AN 1L3M, DTA 143ES, RN 2001, UN 411L,4+ Si-P+R =KRA 101M: SMD {KRC101S 35a SOT-23 FN 1L3M, DTA 143EK, RN 240t, UN 211L,4++ Kec Si-P+R =KRA 101M: Rb=Rbe=10kQ2 {KRC102M 7 T0-92 AN 1A4M, DTA 114ES, RN 2002, UN 4111,++ Si-P+R =KRA 102M: SMD {KRG102S 35a S0T-23 FN 1A4M, DTA 114EK, RN 2402, UN 2111,++ Kec Si-P+R =KRA 101M: Rb=Rbe=22kQ2 {KRC103M 7c 70-92 AN 1F4M, DTA 124ES, RN 2003, UN 4112,44 Si-P+R =KRA 103M: SMD {KACtO3S 35a SOT-23 FN 1F4M, DTA 124EK, RN 2403, UN 2112,++ Kec Si-P+R =KRA 101M: Rb=Rbe=47kQ {KRO104M 7c T0-92 AN 1L4M, DTA 144ES, RN 2004, UN 4113.44 Si-P+R =KRA 104M: SMD {KRC104S 35a SOT-23 FN 1L4M, OTA 144EK, RN 2404, UN 2113,++ Kec Si-P+R =KRA 101M: Rb=2,2k, Rbe=47kQ {KRC105M 7c TO-92 DTA 123JS, RN 2005 Si-P+R =KRA 105M: SMD {KRC105S 35a SOT-23 DTA 123JK, RN 2405 Kec Si-P+R =KRA 101M: Rb=4,7k, Rbe=47kQ {KRC1O6M 7c TO-92 DTA 1432S, RN 2006, 2SA1591, 25A1616 : Si-P+R =KRA 106M: SMD {KRC106S 35a SOT-23 DTA 143ZK, RN 2406, 25A1597 Kec Si-P+R =KRA 101M: Rb=10k, Rbe=47kQ {KRC107M 7c T0-92 AN 1A4P, DTA 114YS, RN 2007, UN 4114.44 Si-P+R =KRA 107M: SMD {KRC107S 35a SOT-23 FN 1A4P, DTA 114YK, RN 2407, UN 2114,4++ Kec Si-P+R =KRA 101M: Rb=22k, Rbe=47kQ. {KRC108M 7c T0-92 AN 1F4N, DTA 124XS, KSR 2007, RN 2008 Si-P+R =KRA 108M: SMD {KRC108S 35a SOT-23 FN 1F4N, DTA 124XK, KSR 2107, RN 2408 Kec Si-P+R =KRA 101M: Rb=47k, Rbe=22kQ {KRC109M 7c T0-92 AN 1L4L, DTA 144WS, RN 2009, UN 411E,++4 Si-P+R =KRA 109M: SMD {KRC109S 35a SOT-23 FN 1L4L, DTA 144WK, RN 2409, UN 211E,++ Kec Si-P+R =KRA 101M: Rb=4,7kQ, Rbe=- {KRC110M 7c TO-92 AN 1L3Z, DTA 1437S, RN 2010, UN 4416,++ Si-P+R =KRA 110M: SMD {KRC1108 35a SOT-23 FN 1L3Z, DTA 143TK, RN 2410, UN 2116,++ Kec Si-P+R =KRA 101M: Rb=10kQ, Rbe=- {KRO11IM 7c TO-92 AN 1A4Z, DTA 1147S, RN 2011, UN 4115,++ Si-P+R =KRA 111M: SMD {KRC111S 35a SOT-23 FN 1A4Z, DTA 114TK, RN 2411, UN 2115,++ Kee Si-P+R =KRA 101M: Rb=100kQ, Rbe=- {KRCI12M 7c J0-92 OTA 1157S Si-P+R =KRA 112M: SMD {KRC112S 35a SOT-23 DTA 115TK Kec Si-P+R =KRA 101M: Rb=22kQ, Rbe=- {KRC113M 7c T0-92 AN 1F4Z, DTA 1247S, UN 4117, 2SA1590,++ Si-P+R =KRA 113M: SMD {KRC113S 35a SOT-23 FN 1F4Z, DTA 124TK, UN 2117, 2SA1589,++4 Kec Si-P+R =KRA 101M: Rb=47kQ, Rbe=- {KRC114M 7c TQ-92 AN 114Z, DTA 1447S, UN 4110, 25A1509,++ Si-P+R =KRA 114M: SMD {KRC114S 35a SOT-23 FN 1L4Z, DTA 144TK, UN 2110, 25A1508,++