PD-96256 IRF7424GPbF HEXFET(R) Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Halogen-Free Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. VDSS RDS(on) max (mW) ID -30V 13.5@VGS = -10V 22@VGS = -4.5V -11A -8.8A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Top View Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -30 -11 -9.3 -47 2.5 1.6 20 20 -55 to + 150 V mW/C V C Max. Units 50 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 7/10/09 IRF7424GPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 --- --- --- -1.0 17 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.019 --- --- --- --- --- --- --- --- 75 14 12 15 23 150 76 4030 580 410 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 13.5 VGS = -10V, ID = -11A m 22 VGS = -4.5V, ID = -8.8A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -11A -15 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 110 ID = -11A 21 nC VDS = -15V 18 VGS = -10V --- VDD = -15V --- ID = -1.0A ns --- RG = 6.0 --- VGS = -10V --- VGS = 0V --- pF VDS = -25V --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units -2.5 -47 --- --- --- --- 40 47 -1.2 60 71 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7424GPbF 1000 1000 VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 100 100 10 1 -2.5V 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 10 -2.5V 1 0.1 100 Fig 1. Typical Output Characteristics 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 150 C 10 TJ = 25 C 1 V DS = -15V 20s PULSE WIDTH 3.0 3.5 4.0 4.5 Fig 3. Typical Transfer Characteristics www.irf.com 1 10 100 Fig 2. Typical Output Characteristics 100 -VGS , Gate-to-Source Voltage (V) 20s PULSE WIDTH TJ = 150 C -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 0.1 2.5 VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP TOP 5.0 ID = -11A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7424GPbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 5000 Ciss 4000 3000 2000 Coss 1000 Crss 0 1 10 12 -VGS , Gate-to-Source Voltage (V) 6000 ID = -11A 10 8 6 4 2 0 100 0 20 -VDS , Drain-to-Source Voltage (V) 60 80 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 40 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS =-24V VDS =-15V 1.2 100us 10 1ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 10ms 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7424GPbF 12 VDS 10 VGS D.U.T. RG -ID , Drain Current (A) RD - + 8 VDD VGS 6 Pulse Width 1 s Duty Factor 0.1 % 4 Fig 10a. Switching Time Test Circuit 2 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 10% TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.035 RDS (on) , Drain-to-Source On Resistance () RDS(on) , Drain-to -Source On Resistance () IRF7424GPbF 0.030 0.025 0.020 ID = -11A 0.015 0.010 2.0 4.0 6.0 8.0 10.0 0.030 0.025 VGS = -4.5V 0.020 0.015 VGS = -10V 0.010 0 10 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 20 30 40 50 60 -I D , Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit www.irf.com 2.2 120 2.0 100 ID = -250A 1.8 80 Power (W) -V GS(th) Gate Threshold Voltage(V) IRF7424GPbF 1.6 60 1.4 40 1.2 20 1.0 0 -75 -50 -25 0 25 50 75 100 T J , Temperature ( C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 125 150 0.001 0.010 0.100 1.000 10.000 100.000 Time (sec) Fig 16. Typical Power Vs. Time 7 IRF7424GPbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ',0 % $ + >@ ( $ 0,1 $ E F ' ( H %$6,& H ; H H ;E >@ $ $ 0,//,0(7(56 0$; $ ,1&+(6 0,1 0$; %$6,& %$6,& %$6,& + . / \ .[ & \ >@ & $ % ;/ ;F )22735,17 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5)*3%) ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; )* '$7(&2'( <:: 3 ',6*1$7(6/($')5(( 352'8&7 < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 *'(6,*1$7(6 +$/2*(1)5(( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRF7424GPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2009 www.irf.com 9