OKI Semiconductor MSC23109C/CL-xxDS3 1,048,576-Word x 9-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23109C /CL-xxDS3 is a fully decoded 1,048,576-word x 9-bit CMOS Dynamic Random Access Memory Module composed of two 4-Mb DRAMs (1M x4) in SOJ packages and one 1-Mb DRAM (1M x 1) in an SOJ package mounted with three decoupling capacitors on a 30- pin glass epoxy single-inline package. This module is generally used for memory expansion in parity applications such as workstations. The low-power version (CL) offers reduced power consumption for mobile computing applications like laptops and palmtops. FEATURES 1-Meg x 9-bit organization * 30-Pin Socket Insertable Module MSC23109C/CL-xxDS3 _: Solder tab * Single 5 V supply 10% tolerance * Access times : 60, 70, 80 ns Input : TTL compatible Output : TTL compatible, 3-state * Refresh : 1024 cycles/16 ms (128 ms : L-version) * CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability Fast Page Mode capability PRODUCT FAMILY Family Access Time (Max.) Cycle Time Power Dissipation trac taa teac (Min.} Operating (Max.)| Standby (Max.} MSC23109C/CL-60DS3 60ns | 30ns | 151s 110 ns 1485 mW 16.5 mWW/ MSC23t09C/CL-70D83 7Ons | 35ns |} 20ns 130 ns 1320 mW 3 3 mW (L-version) MSC23109C/CL-80DS83 80ns | 40ns | 20ns 150 1s 1155 mW 37MSC23108C/CL-xx0S3 OKI Semiconductor PIN CONFIGURATION MSC23109C/CL-xxDS3 4 88.9 +0.2 5.28 Max. 3.38 Typ. 82.14 Typ. t- 18 ? 16.51 40.2 Cy LC] = b 10.16 635 1 moaonnnonaann aonnnonannnann30 2.54 Min. 2.03 Typ. | |5.59 Typ. 2.54 20.1 1.78 Typ. 73.66 1.27 Bde || *1 The common size difference of the beard width 12.5 mm of its height is specified as 0.2. The value above 12.5 mm is specified as +0.5. Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name 1 Vec WW A4 21 WE 2 CAS 12 AS 22 Vss 3 Dao 13 DQ3 23 DO6 4 AO 14 A6 24 NC 5 Al 15 A? 25 DQ7 6 DQ1 16 Da4 26 Q8 7 A2 17 AS 27 RAS B A3 18 AQ 28 CAS8 9 Vss 19 NC 29 Dg 10 DQ2 20 DOS 30 Vec 38OKI Semiconductor BLOCK DIAGRAM Al - Ad AO-A9 DQ F-Cd0 RAS RAS =o + pal CAS CAS =a +- a2 WE WE 00 + 003 CE Voc Vgg | TT @+ AO-A9 DO + DO4 RAS = =00 P- Da5 CAS) =00 + p06 WE 00 } bo? CE Vee Vss /S || AQ- Ad Lj RAS CASS CAS D tps WE Q +as Vee Vss Veo ___| C1 G3 V5 #o--__ MSC23109C/CL-xxDS3 39MSC23109C/CL-xxDS3 OKI Semiconductor ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Symbol Rating Unit Voltage on Any Pin Relative toVss | Vin, Vour -1.0 to 7.0 V Voitage Vcc Supply Relative to Vss Vec -1.0 ta 7.0 V Short Circuit Output Current los. 50 mA Power Dissipation Pp 3 Ww Operating Temperature Topr Oto 70 Cc Storage Temperature _Tsig 40 ta 125 C Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Recommended Operating Conditions (Ta = 0C te 70C) Parameter Symbol Min. Typ. Max. Unit Vec 45 5.0 5.5 V Power Supply Voltage Ves P 0 0 v Input High Voitage Vin 24 ~ 6.5 V input Low Voltage Vic -1.0 _ 0.8 V Capacitance (Ta = 25C, f = 1 MHz) Parameter Symbol Typ. Max. Unit Input Capacitance (AQ - A9) Cint _ 24 pF iaput Capacitance (RAS, CAS, WE) Cine 26 pF 1/0 Capacitance (0Q0 - 007) Coa _ 13 pF Input Capacitance (CASB) Cing _ 11 pF Input Capacitance (D8) Cina _ 11 pF Output Capacitance (Q8) Cour _ 12 pF Note: Capacitance measured with Boonton Meter. 40OKI Semiconductor DC Characteristics MSC23109C/CL-xxDS3 (Veco = 5 V 210%, Ta = 0C to 70C) MSC23109C/CL|MSC23109C/CLIMSC23109C/CL Parameter Symbol Condition -60DS3 -70DS3 -800S3 Unit |Note Min, | Max.) Min. | Max. | Min, | Max. OVSEVis65V: Input Leakage Current lL | All other pins not -30 30 -30 30 -30 30 pA under test = OV Output Leakage Current | Iho ovevness y | 19} 10 | 10) 10 | -10 | 10 | pa Output High Voltage Vou | lon =-5.0 mA 2.4 Vec 2.4 Voc 2.4 Vec Vv Output Low Voltage Vor | lop = 4.2 mA G 0.4 0 0.4 0 0.4 V Average Power . Supply Current bocr | PAS: CAS cvcting. |_| oz | | 24a | | 2t0 | mal t.2 . trac = Min. (Operating) Power Supply RAS. CAS = Min 6 6 6 mal 4 Current (Standby) lace | RAS, CAS 3 3 3 | mal | 2Vec-0.2V _ 600 _ 600 _ 600 | pA} 1,5 Average Power RAS cycling, Supply Current lees | CAS = Vin, | 270 | | 240} | 210 | mAs 1,2 (RAS-only Refresh) tre = Min. : Average Power RAS cycling, Supply Current \cce | CAS before RAS, | | 270 | | 240 | | 210 | mal 1,2 (CAS before RAS Refresh) tre = Min. Average Power RAS = Vi, Supply Current lcc7 | CAS cycling, _ 225 _ 195 _ 165 | mAl1,3 (Fast Page Mode) tec = Min. Average Power tac = 125 ps, 12 Supply Current lecro | CAS before | 900} | 900 | | 900 | pA 4 5 (Battery Backup) RAS cycling Notes: 1. Specified values are obtained with the output open.. 2. Address can be changed once or less while RAS=VIL. 3. Address can be changed once or less while CAS=V)}. 4. Voc -0.2V<SViy $6.5 V,-10V<S Vy S02 V. 5. L-version. 41MSC23108C/CL-xxDS3 AC Characteristics (1/2) OKI Semiconductor (Vcc = 5 V 210%, Ta=0C to 70C) ~ Note 1.2.3 MSC23108C/CL|MSG23109C/CL|MSG23109C/CL| Parameter Symbol -60DS83 -70DS3 -80DS3 Unit} Note Min. | Max. | Min. | Max.| Min. | Max. Random Read or Write Cycte Time tac | 120 _ 130 _ 186 ns Fast Page Mode Cycle Time tec 40 _ 45 _ 50 ~_ ns. Access Time from RAS. trac | 60 70 80 ns 14.5,6 Access Time from CAS: teac | 15 _ 20 20 | ns | 4.5 Access Time from Column Address taa 30 _ 35 _ 40 msi 46 Access Time from CAS Precharge topa_ | 35 | 40 45 | ns | 4 Output Low Impedance Time from GAS tz | 9 _ 0 _ 0 | ns| 4 Output Buffer Turn-off Delay Time torr 0 15 0 20 0 20 ns 7 Transition Time tr 3 50 3 50 3 50 ns 3 Refresh Period trRep | 16 _ 16 _ 16 ms Refresh Period (L-version) tRer _- 128 _ 128 _ 12B | ms RAS Precharge Time tap | 50 _ 50 _ 60 | ns RAS Pulse Width teas | 60 | 10K | 70 | 10K | 80 | 10K | ns RAS Pulse Width (Fast Page Mode) trasp | 60 | 100K | 70 | 100K} 80 | 100K | ns RAS Hold Time trsy | 15 20 _ 20 | ns CAS Precharge Time tcp | 10 _ 10 _ 10 | ns TAS Pulse Width tcas | 15 | 10K | 20 | 10K | 20 | 140K | ns CAS Hold Time tesy | 60 | 70 | 80 | | ns CAS to RAS Precharge Time terp | 5 _ 5 5 | os RAS to CAS Delay Time trcp | 20 45 20 50 20 60 | msi 5 RAS to Column Address Delay Time trap | 15 30 15 35 15 40 j ns} 6 Row Address Set-up Time tasr 0 _ 0 _ 0 _ ns Row Address Hold Time tray | 10 _ 10 _ 10 _ ns Column Address Set-up Time tasc 0 _ 0 0 _ ns Column Address Hold Time tcan | 15 _ 15 _ 15 _ ns Column Address Hold Time from RAS tan | 50 55 _ 60 | ns Column Address te RAS Lead Time tra, | 30 35 40 | ns 42OKI Semiconductor MSC23109C/CL-xxDS3 AC Characteristics (2/2) (Veo = 5 V #10%, Ta = 0C 10 70C) Note 1,2.3 MSC23109C/CLIMSC23109C/CLIMSC23109C/CL Parameter Symbo! -60DS3 -70DS3 -B0DS3 Unit | Note Min. | Max. | Min. | Max.) Min. | Manx. Read Command Set-up Time tacs 0 _ 0 _ 0 _ ns Read Command Hold Time tacn 0 _ 0 _ 0 | ns 8 Read Command Hold Time referencec to RAS | tary 0 _ 0 _ 0 _ ns 8 Write Command Set-up Time twes 0 _ 0 _ 0 _ ns Write Command Hold Time twen | 10 _ 15 _ 15 | 7s Write Command Hold Time from RAS twer | 50 | 55 _ 60 | os Write Command Pulse Width twe 10 _ 15 _ 15 _ ns Write Command to RAS Lead Time taw. | 15 | 20 _ 20 | ns Write Command to CAS Lead Time teow. | 15 20 20 | os Data-in Set-up Time tos 0 _ 0 _ 0 _ ns Data-in Hold Time ton 15 _ 15 _ 15 _ ns Data-in Hold Time from RAS foxn | 50 55 _ 60 | os TAS Active Delay Time from RAS Precharge| tapc 10 _ 10 _ 10 fos RAS to CAS Set-up Time (CAS before RAS)| tcsh | 101 | 10 | | 10) [ns RAS to CAS Hold Time (CAS before RAS) | town | 30} | 30 | | 30 | | ns CAS Precharge Time (Refresh Counter Test)! tcpt | 40 | 40 40 | ns WE to RAS Precharge Time (CAS before RAS)| twep | 10 _ 10 _ 10 | ns WE Hold Time from AAS (CAS before RAS)| tway | 10 | 10 - 10 | J os 43MSC23109C/CL-xxDS3 Notes: 1. OKI Semiconductor A start-up delay of 200 us is required after power-up followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. When using the internal refresh counter, a minimum of eight CAS before RAS initialization cycles is required. AC mesurement assume ty = 5 ns. Vin (Min.) and Vy, (Max.) are reference levels for measuring input timing signals. Transition times are measured between Vip and Vj,. Measured with a load circuit equivalent to 2 TTL loads and 100 pF. Operation within the tpcp (Max.)} limit ensures that trac (Max.) can be met. tpcp (Max.) is specified as a reference point only. If tpcpis greater than the specified tpcp (Max.) limit, access time is controlled by tcac. . Operation within the trap (Max.) limit ensures that tpac (Max.) can be met. trap (Max.) is specified as.a reference point only. If tpapis greater than the specified trap (Max.) limit, access time is controlled by ta 4. torr (Max.) defines the time at which the output achieves an open circuit condition and is not referenced to output voltage levels. tRcH Or trrH must be satisfied for a read cycle. See ADDENDUM B for AC Timing Waveforms