IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRG7PK35UD1PbF TO-247AC Tube 25 IRG7PK35UD1PbF
IRG7PK35UD1-EPbF TO-247AD Tube 25 IRG7PK35UD1-EPbF
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1400 V
IC @ TC = 25°C Continuous Collector Current 40
A
IC @ TC = 100°C Continuous Collector Current 20
ICM Pulse Collector Current, VGE = 15V 200
ILM Clamped Inductive Load Current, VGE = 20V 80
IF @ TC = 25°C Diode Continuous Forward Current 40
IF @ TC = 100°C Diode Continuous Forward Current 20
VGE Continuous Gate-to-Emitter Voltage ±30 V
PD @ TC = 25°C Maximum Power Dissipation 167 W
PD @ TC = 100°C Maximum Power Dissipation 67
TJ Operating Junction and -40 to +150
C
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case (IGBT) ––– ––– 0.75
°C/W
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
RJC (Diode) Thermal Resistance Junction-to-Case (Diode) ––– ––– 1.4
VCES = 1400V
IC = 20A, TC =100°C
TJ(max) = 150°C
VCE(ON) typ. = 2.0V @ IC = 20A
Applications
Induction heating
Microwave ovens
Soft switching applications
Features Benefits
Low VCE(ON), ultra-low VF, and turn-off soft switching losses High efficiency in a wide range of soft switching
applications and switching frequencies
Positive VCE (ON) temperature coefficient and tight distribution
of parameters Excellent current sharing in parallel operation
Lead-free, RoHS compliant Environmentally friendly
G C E
Gate Collector Emitter
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
E
G
n-channel
C
IRG7PK35UD1‐EPbF
TO‐247AD
E
G C
C
E
G C
C
IRG7PK35UD1PbF
TO‐247AC
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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
VCE(on) Collector-to-Emitter Saturation Voltage — 2.0 2.35 V IC = 20A, VGE = 15V, TJ = 25°C
— 2.4 —
IC = 20A, VGE = 15V, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 600µA
gfe Forward Transconductance — 21 — S VCE = 50V, IC = 20A, PW = 20µs
ICES Collector-to-Emitter Leakage Current — 1.0 100 µA VGE = 0V, VCE = 1400V
— 150 — VGE = 0V, VCE = 1400V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V
VF Diode Forward Voltage Drop — 1.30 1.43 V IF = 20A
— 1.25 — IF = 20A, TJ = 150°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
Qg Total Gate Charge (turn-on) — 65 98
nC
IC = 20A
Qge Gate-to-Emitter Charge (turn-on) — 15 23 VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 25 38 VCC = 600V
Eoff Turn-Off Switching Loss — 0.65 0.90 mJ IC = 20A, VCC = 600V, VGE = 15V
RG = 10, TJ = 25°C
td(off) Turn-Off delay time — 150 170 ns Energy losses include tail
tf Fall time — 75 95
Eoff Turn-Off Switching Loss — 1.3 — mJ IC = 20A, VCC = 600V, VGE = 15V
RG = 10, TJ = 150°C
td(off) Turn-Off delay time — 180 — ns Energy losses include tail
tf Fall time — 180 —
Cies Input Capacitance — 2200 — VGE = 0V
Coes Output Capacitance — 70 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 35 — f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C, IC = 80A
FULL SQUARE VCC = 1120V, Vp ≤ 1400V
RG = 10, VGE = +20V to 0V
Notes:
FBSOA operating conditions only.
Pulse width limited by max. junction temperature.
V
CC = 80% (VCES), VGE = 20V, RG = 10.
R
is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
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25 50 75 100 125 150
TJ , Temperature (°C)
3.0
3.4
3.8
4.2
4.6
5.0
VGE(th), Gate Threshold Voltage
IC = 600µA
25 50 75 100 125 150
TC (°C)
0
10
20
30
40
IC (A)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
25 50 75 100 125 150
TC (°C)
0
50
100
150
200
Ptot (W)
10 100 1000 10000
VCE
(V)
1
10
100
1000
IC (A)
Fig. 2 - Power Dissipation vs.
Case Temperature
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
Fig. 3 - Typical Gate Threshold Voltage
vs. Junction Temperature
0246810
VCE
(V)
0
20
40
60
80
ICE
(A)
VGE
= 18V
VGE
= 15V
VGE = 12V
VGE
= 10V
VGE = 8.0V
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
0246810
VCE
(V)
0
20
40
60
80
ICE
(A)
VGE
= 18V
VGE
= 15V
VGE = 12V
VGE
= 10V
VGE = 8.0V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
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24681012
VGE
(V)
0
20
40
60
80
ICE
(A)
TJ = 25°C
TJ = 150°C
5101520
VGE
(V)
0
2
4
6
8
10
12
VCE
(V)
ICE
= 40A
ICE
= 20A
ICE
= 10A
5101520
VGE
(V)
0
2
4
6
8
10
12
VCE
(V)
ICE
= 40A
ICE
= 20A
ICE
= 10A
0.0 1.0 2.0 3.0
VF (V)
0
10
20
30
40
50
60
70
80
IF (A)
25°C
150°C
Fig. 8 - Typ. Diode Forward Voltage Drop
Characteristics
5101520
VGE
(V)
0
2
4
6
8
10
12
VCE
(V)
ICE
= 40A
ICE
= 20A
ICE
= 10A
0 2 4 6 8 10
VCE
(V)
0
20
40
60
80
ICE
(A)
VGE
= 18V
VGE
= 15V
VGE = 12V
VGE
= 10V
VGE = 8.0V
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 20µs
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
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010 20 30 40
IC (A)
10
100
1000
Swiching Time (ns)
tdOFF
tF
020 40 60 80 100
RG ()
10
100
1000
10000
Swiching Time (ns)
tdOFF
tF
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; VCE = 600V, ICE = 20A; VGE = 15V
0 10203040
IC (A)
0.0
0.5
1.0
1.5
2.0
2.5
Energy (mJ)
EOFF
0 20406080100
Rg ()
1.0
1.4
1.8
2.2
2.6
Energy (mJ)
EOFF
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 20A; VGE = 15V
0100 200 300 400 500 600
VCE
(V)
1
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
0 10203040506070
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE
, Gate-to-Emitter Voltage (V)
VCES
= 600V
VCES
= 400V
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 20A
IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
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1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig. 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Ri (°C/W) i (sec)
0.009435 0.00000971
0.134412 0.00005224
0.182875 0.00033830
0.286292 0.00397000
0.136974 0.02151000
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
4
4
R
4
R
4
C
C
5
5
R
5
R
5
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.017209 0.000012
0.520952 0.000591
0.550676 0.004389
0.309755 0.032009
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
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Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - BVCES Filter Circuit
L
Rg
80 V
DUT VCC
+
-
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
-5V
G force
C sense
100K
DUT
0.0075µF
D1 22K
E force
C force
E sense
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
-10
0
10
20
30
40
50
60
70
80
-100
0
100
200
300
400
500
600
700
800
-1.4 -0.4 0.6 1.6 2.6
I
CE
(A)
V
CE
(V)
time(µs)
90% I
CE
5% V
CE
10% I
CE
Eoff Loss
tf
IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
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TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
YEAR 1 = 2001
DATE CODE
PART NUMBER
INTERNATIONAL
LOGO
RECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE H
indicates "Lead-Free" WEEK 35
LOT CODE
IN THE ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2001
Notes: This part marking information applies to devices produced after 02/26/2001
Note: "P" in assembly line position
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFPE30
LOT CODE 5657
TO-247AC Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC package is not recommended for Surface Mount Application.
IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
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TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
ASSEM BLY YEAR 0 = 2000
ASSEM BLED ON W W 35, 2000
IN THE ASSEM BLY LINE "H"
EXAM PLE: THIS IS AN IRGP30B120KD-E
LOT CODE 5657
WITH ASSEMBLY PART NUMBER
DATE CODE
IN T E R N A T IO N A L
RECTIFIER
LO G O
035H
5 6 57
WEEK 35
LIN E H
LOT CODE
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD package is not recommended for Surface Mount Application.
IRG7PK35UD1PbF/IRG7PK35UD1-EPbF
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IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Qualification Information†
Qualification Level Consumer††
(per JEDEC JESD47F)†††
Moisture Sensitivity Level TO-247AC N/A
RoHS Compliant Yes
TO-247AD N/A
† Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
