J105 J106 J107 J105-18 J106-18 J107-18 iconix n-channel JFETs designed for... = Analog Switches = Choppers = Commutators ABSOLUTE MAXIMUM RATINGS (25C) Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation at 25C Ambient (Derate 3.27 mW/C) Operating Temperature Range Storage Temperature Range Lead Temperature Range (1/16 from case for 10 seconds) cece eeeeeeees -25V bette eee eee tent taneneenas 50 mA G bce e eee e eee eeeens 360 mW s ve ee nase eues 55 to 135C Lene ee ee ee anes 55 to 150C 300C ofS ss Siliconix Performance Curves NVA See Section 5 BENEFITS @ Very Low Insertion Loss RpS(on) <3 2 (J105) No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from Driver TO-92 See Section 7 G om 6 s D G s D s Bottom View Bottom View 5 (-18} ELECTRICAL CHARACTERISTICS (25C_ unless otherwise noted) J105 J106 J107 Characteristic - Unit Test Conditions Min | Typ} Max |Min| Typ|Max| Min] Typ| Max _} Igss Gate Reverse Current (Note 1} -3 +3 3|nA | Vps=0V, Ves =-15V 2 VGS(off) Gate-Source Cutoff Voltage -45 -10] -2 -6|-0.5 -4.5 v Vos =5V.Ip=1HA 3 a|8VGss Gate-Source Breakdown Voltage |25 r-25 }-25 Vps=0V,IG =-1HA 4|T] Ipss Drain Saturation Current (Note 2} | 500 200 100 mA | Vos = 15 V, VGs=OV 5 ID(off) Drain Cutoff Current (Note 1) 3 3 3/nA | Vos =5 V, Vag =-10V 6 "DS{on) Drain Source ON Resistance 3 6 8] Q | Vos <0.1V,Vgs5=0V 7 Cc ff Drain Gate OFF Capacitance 35 35 35 j | Edaloff) Vpg = 0 V, Vgg =-10 V 3 Csgiotf) Source Gate OFF Capacitance 35 35 35 9 y Cag{on) brain Gate plus 6 pF f=1MHz rain Gate plus Source Gate Vv =V =0V N + ON Capacitance 160 160 160 Ds = Ves |__| A | Csgion) 10 tdion} Turn On Delay Time 15 15 15 Switching Time Test Conditions | a J105 $106 S107 Jie ltr Rise Time 20 20 20 ns Vpp 15V 15V 15V 12 td{off) Turn Off Delay Time 15 18 15 Vesioft) -12V -7V0 BV 13 tt Fat! Time 20 20 20 Re 502 502 502 NOTES: NVA 1. Approximately doubles for every 10C increase in Ta. 2. Pulse test duration = 300 ys; duty cycle < 3%. 1979 Siliconix incorporated 4-8