BAV100 thru BAV103
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88148 www.vishay.com
14-May-02 1
Small-Signal Diodes
Maximum Ratings and Thermal Characteristics (TA= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Continuous Reverse Voltage BAV100 50
BAV101 VR100 V
BAV102 150
BAV103 200
Repetitive Peak Reverse Voltage BAV100 60
BAV101 VRRM 120 V
BAV102 200
BAV103 250
Forward DC Current at Tamb = 25°C(1) IF250 mA
Rectified Current (Average)
Half Wave Rectification with Resist. Load IF(AV) 200 mA
at Tamb = 25°C and f ≥50Hz(1)
Repetitive Peak Forward Current IFRM 625 mA
at f ≥50Hz, θ = 180°, Tamb = 25°C(1)
Surge Forward Current at t < 1s, Tj= 25°CI
FSM 1A
Power Dissipation at Tamb = 25°C(1) Ptot 400 mW
Thermal Resistance Junction to Ambient Air(1) RθJA 375 °C/W
Junction Temperature Tj175 °C
Storage Temperature Range(1) TS–65 to +175 °C
Note:
(1) Valid provided that electrodes are kept at ambient temperature
.146 ( 3.7) .019 (0.48)
Ca thode Band
.130 ( 3.3)
.051 ( 1.3)
.011 (0.28)
.063 (1.6)Dia.
Features
• Silicon Epitaxial Planar Diodes
• For general pur pose
• These diodes are also available in other case
styles including: the DO-35 case with the type
designations BAV19 to BAV21, the SOD-123 case
with the type designations BAV19W to BAV21W,
the SOT-23 case with the type designations
BAS19 to BAS21, and the SOD-323 case with
type designations BAV19WS to BAV21WS.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
Cathode Band Color: Yellow
Packaging Codes/Options:
F4/10K per 13”reel (8mm tape), 50K/box
MiniMELF (SOD-80C)
Dimensions in inches and (millimeters)
BAV100 thru BAV103
Vishay Semiconductors
for mer ly General Semiconductor
www.vishay.com Document Number 88148
214-May-02
Electrical Characteristics (TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
F orward Voltage VFIF = 100mA ——1.00 V
IF = 200mA ——1.25
BAV100 VR = 50V ——100 nA
Leakage Current BAV100 VR = 50V, Tj= 100°C ——15 µA
BAV101 VR = 100V ——100 nA
BAV101 IRVR = 100V, Tj= 100°C ——15 µA
BAV102 VR = 150V ——100 nA
BAV102 VR = 150V, Tj= 100°C ——15 µA
BAV103 VR = 200V ——100 nA
BAV103 VR = 200V, Tj= 100°C——15 µA
Dynamic Forward Resistance rfIF= 10mA —5—Ω
Capacitance Ctot VR= 0, f = 1MHz —1.5 —pF
Reverse Recover y Time trr IF= 30mA, IR = 30mA ——50 ns
Irr = 3mA, RL= 100Ω
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
BAV100 thru BAV103
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88148 www.vishay.com
14-May-02 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
Ω
