1718-32L - GHz Technology, Inc.

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFOR M ANC E CH ARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

1718-32L

32 Watt - 24 Volts, Class C

Microwave 1750 - 1850 MHz

GENERAL DESCRIPTION

The 1718-32L is a COMMON BASE transistor capable of providing 32

Watts of Class C, RF output power over the band 1750-1850 MHz. This

transist or is designed for Micro wave Broadband Class C amplifier

applications. It includes Input and Output prematching and utilizes Gold

metalization and diffused ballasting to provide high reliability and supreme

ruggedn ess. The transistor uses a fully hermetic High Temperatu r e Solder

sealed p ackage.

CASE OUTLINE

55KT - STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 117 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage 50 Volts

BVebo Emitter to Base Voltage 3.5 Volts

Ic Collector Current 12 A

Maximum Temp eratures

Storage Temperature - 65 to + 200 C

Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

Pout

ηc

VSWR1

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 1750-1850 MHz

Vcb = 24 Volts

Pin = 7 Watts

As Above

F = 1750 MHz, Pin = 7 W

6.5 7.0

3:1

Watt

BVces

BVebo

HFE

Cob

θjc

Collector to Emitter Breakdown

Emitter to Base Breakdown

Current Gain

Output Capacitance *

Thermal Resistance

Ic = 20 mA

Ie = 15 mA

Vce = 5 V, Ic = 500 mA

F = 1 MHz, Vcb = 28V

3.5

10 100

1.5

Volts

C/W

* Not measureable du e to Output Prematch withi n the p ackage

Issue January 1996