MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N3773 Features * * NPN Silicon Power Transistors Used in power switching circuits such as relay or solenoid drivers With TO-3 package Maximum Ratings Symbol V CEO V CBO V EBO ICP IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 140 160 7.0 20 10 100 -55 to +150 -55 to +150 TO-3 Unit V V V A A W O C O C A N E C K D U V L H 2 1 Electrical Characteristics @ 25 C Unless Otherwise Specified O Symbol Parameter Min Max Units 140 --- Vdc --- 2.0 mAdc --- 5.0 mAdc OFF CHARACTERISTICS V (BR)CEO ICBO IEBO ICEO V CE(sat) V BE(sat) B Q Collector-Emitter Breakdown Voltage (IC=100mAdc, IB =0) Collector-Base Cutoff Current (VCB=140Vdc, IE =0) Emitter-Base Cutoff Current (VEB =7.0Vdc, IC=0) Collector-Emitter Cutoff Voltage (V CE=120mAdc, IB =0) Forward Current Transfer ratio (IC=8.0Adc, V CE=4.0Vdc) Collector-Emitter Saturation Voltage (IC=4.0Adc, IB =400mAdc) Base-Emitter Saturation Voltage (IC=8.0Adc,V CE=4.0Vdc) PIN 1. PIN 2. CASE. BASE EMITTER COLLECTOR DIMENSIONS --- 10 mAdc 10 60 --- --- 1.5 Vdc --- 2.2 Vdc ON CHARACTERISTICS hFE G INCHES DIM A B C D E G H K L N Q U V MIN 1.550 ----.250 .038 0.55 .430 .215 .440 .665 ----.151 1.187 .131 MAX REF 1.050 .335 .043 0.70 BSC BSC .480 BSC .830 .165 BSC .188 MM MIN 39.37 ----6.35 0.97 1.40 10.92 5.46 11.18 16.89 ----3.84 30.15 3.33 MAX REF 26.67 8.51 1.09 1.77 BSC BSC 12.19 BSC 21.08 4.19 BSC 4.77 NOTE www.mccsemi.com Revision: 2 2003/04/30