Databook.fxp 1/13/99 2:09 PM Page B-11 B-11 01/99 2N4338, 2N4339 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Audio Amplifiers Small Signal Amplifiers Voltage-Controlled Resistors Current Limiters & Regulators At 25C free air temperature: Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 175C) 2N4339 Static Electrical Characteristics Min Max Gate Source Breakdown Voltage V(BR)GSS - 50 Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) Drain Source ON Resistance rds(on) Common Source Forward Transconductance gfs Common Source Output Conductance gos 5 Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Noise Figure 2N4339 Min Max - 50 - 50 V 50 mA 300 mW 2mW/C Process NJ16 Unit Test Conditions V IG = - 1 A, VDS = OV - 100 - 100 pA VGS = - 30V, VDS = OV - 100 - 100 nA VGS = - 30V, VDS = OV - 0.6 - 1.8 V VDS = 15V, ID = 0.1 A 1.5 mA VDS = 15V, VGS = OV 0.05 (- 5) 0.05 (- 5) nA V VDS = 15V, VGS = ( ) 2500 1700 VGS = OV, ID = O A f = 1 kHz 600 1800 800 2400 S VDS = 15V, VGS = OV f = 1 kHz 15 S VDS = 15V, VGS = OV f = 1 kHz 7 7 pF VDS = 15V, VGS = OV f = 1 MHz Crss 3 3 pF VDS = 15V, VGS = OV f = 1 MHz NF 1 1 dB VDS = 15V, VGS = OV RG = 1 M, BW = 200 Hz f = 1 kHz - 0.3 -1 0.2 0.6 0.5 TA = 150C Dynamic Electrical Characteristics TO18 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375