01/99 B-11
2N4338, 2N4339
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 300 mW
Power Derating (to 175°C) 2mW/°C
TOÐ18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: 2N4339 2N4339 Process NJ16
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 50 – 50 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 pA VGS = – 30V, VDS = ØV
– 100 – 100 nA VGS = – 30V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 0.3 – 1 – 0.6 – 1.8 V VDS = 15V, ID= 0.1 µA
Drain Saturation Current (Pulsed) IDSS 0.2 0.6 0.5 1.5 mA VDS = 15V, VGS = ØV
Drain Cutoff Current ID(OFF) 0.05 0.05 nA VDS = 15V, VGS = ( )
(– 5) (– 5) V
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 2500 1700 ΩVGS = ØV, ID= ØA f = 1 kHz
Common Source gfs 600 1800 800 2400 µS VDS = 15V, VGS = ØV f = 1 kHz
Forward Transconductance
Common Source Output Conductance gos 515µSV
DS = 15V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 77pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Crss 33pFV
DS = 15V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
Noise Figure NF 1 1 dB VDS = 15V, VGS = ØV f = 1 kHz
RG= 1MΩ, BW = 200 Hz
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Databook.fxp 1/13/99 2:09 PM Page B-11
