Fea tures
•TX versions processed to Optek’s
military screening program patterned
after MIL-PRF-19500
•TO-72 hermetically sealed package
•1 kVDC electrical isolation
De scrip tion
Each device in the series is a high
reliability design optically coupled isolator
consisting of an infrared emitting diode
and an NPN silicon phototransistor
mounted in a hermetically sealed TO-72
package.
Typical screening and lot acceptance
tests are provided on page13-4.
Re places
3N243R, 3N244R, 3N245R
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Input- to- Output Iso la tion Volt age ............................. ± 1.00 kVDC(1)
Stor age Tem pera ture Range.............................. -65o C to +150o C
Op er at ing Tem pera ture Range............................ -55o C to +125o C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] ........................................................ 240o C(2)
In put Di ode
For ward DC Cur rent ............................................. 40 mA
Re verse Volt age ................................................. 2.0 V
Power Dis si pa tion ............................................. 60 mW(3)
Out put Pho to tran sis tor
Con tinu ous Col lec tor Cur rent ...................................... 30 mA
Collector- Emitter Volt age ........................................... 30 V
Emitter- Collector Volt age........................................... 5.0 V
Power Dis si pa tion ............................................ 200 mW(4)
Notes:
(1) Meas ured with in put leads shorted to gether and out put leads shorted to gether.
(2) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec. max. when flow sol der ing.
(3) Der ate line arly 0.60 mW/o C above 65o C.
(4) Der ate line arly 2.0 mW/o C above 25o C.
(5) The in put wave form is sup plied by a gen er ator with the fol low ing char ac ter is tics:
ZOUT = 50 Ω, tr ≤ 15 ns, duty cy cle ≅ 1%, pulse width ≅ 100 ms.
Prod uct Bul le tin 3N243, 3N243TX
Sep tem ber 1996
High Re li abil ity Op ti cally Cou pled Iso la tors
Types 3N243, 3N244, 3N245,
3N243TX, 3N244TX, 3N245TX
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
13-14
Types 3N243, 3N244, 3N245
3N243TX, 3N244TX, 3N245TX
Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted)
Sym bol Pa rame ter 3N243TX 3N244TX 3N245TX Units Test Con di tions
Min Typ Max Min Typ Max Min Typ Max
In put Di ode
VF
Forward Voltage 0.80 1.30 0.80 1.30 0.80 1.30 VIF = 10.0 mA
1.00 1.50 1.00 1.50 1.00 1.50 VIF = 10.0 mA, TA = -55o C
0.70 1.20 0.70 1.20 0.70 1.20 VIF = 10.0 mA, TA = 100o C
IRReverse Current 100 100 100 µAVR = 2.0 V
Out put Pho to tran sis tor
V(BR)CEO Collector-Emitter
Breakdown Voltage 30 30 30 VIC = 1.00 mA
V(BR)ECO Emitter-Collector
Breakdown Voltage 5.0 5.0 5.0 VIE = 100 µA
ICEO Collector Dark
Current 100
100 100
100 100
100 nA
µAVCE = 10.0 V
VCE = 10.0 V, TA = 100o C
Cou pled
IC(on)
On-State Collector
Current 1.50 3.00 6.00 mA IF = 10.0 mA, VCE = 10.0 V
0.30 0.80 1.50 mA IF = 3.0 mA, VCE = 10.0 V
0.50 1.00 1.50 mA IF = 10.0 mA, VCE = 10.0 V,
TA = -55o C
0.50 1.00 1.50 mA IF = 10.0 mA, VCE = 10.0 V,
TA = 100o C
VCE(SAT)
Collector-Emitter
Saturation Voltage 0.30 VIF = 20 mA, IC = 1.50 mA
0.30 VIF = 20 mA, IC = 3.0 mA
0.30 VIF = 20 mA, IC = 6.0 mA
IIO Leakage
Input-to-Output 100 100 100 nA VIO = ± 1.00 kVDC(1)
CIO Capacitance
Input-to-Output 5.0 5.0 5.0 pF VIO = 0 V, f = 1.00 MHz(1)
trOutput Rise Time 10.0 10.0 10.0 µsVCC = 10.0 V, IF = 10.0 mA,(5)
RL = 100 Ω
tfOutput Fall Time 10.0 10.0 10.0 µs
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (214)323- 2200 Fax (214)323- 2396
13-15
