TLP281-4GBF - TOSHIBA - Datasheet.Live

TLP281,TLP281-4

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T O SHIBA PHOTOCOU PLER Ga As IRED & PHOT O-TRANSISTOR

TLP281, TLP281-4

PROGRAMMABLE C ONTROLLERS

AC/DC-INPUT MODULE

PC CARD MODEM(PCMCIA)

TLP281 and T LP 281-4 is a very small and thin coupler, suitable

for surface mount assembly in applications such as PCMCIA Fax

modem, programmable controllers.

TLP281 and T LP 281-4 consist of photo transistor, optically coupled

to a gallium arsenide infrared emitting diode.

 Collector-Emitter Voltage : 80 V (min)

 Current Transfer Ratio : 50% (min)

Rank GB : 100% (min)

 Isolation Voltage : 2500 Vrms (min)

 UL Recognized : UL1577, File No. E67349

 cUL approved: CSA Component Acceptance Service No. 5A

File No.E67349

 Option (V4) type

VDE approved: EN60747-5-5 (Note)

Note: When a EN60747-5-5 approved type is needed,

Please designate “Option(V4)”

Pin Configuration (top view)

1:ANODE

2:CATHODE

3:EMITTER

4:COLLECTOR

1,3,5,7 :ANODE

2,4,6,8 :CATHODE

9,11,13,15 :EMITTER

10,12,14,16 :COLLECTOR

TLP281

TLP281-4

TOSHIBA

11-3A1

Weight : 0.05 g (typ.)

TOSHIBA

11-10F1

Weight : 0.19 g (typ.)

Unit: mm

Start of commercial production

1996-03

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Current Transfer Ratio

TYPE Classification

(Note 1)

Current Transf er Ration (%)

(IC/IF)

Marking of Classif ication

IF = 5 mA, VCE = 5 V, Ta = 25°C

Min

Max

TLP281

Blank 50 600 Blank, Y■, YE, G, G■, GR, B, BL, GB

Rank Y 50 150 YE, Y

■

Rank GR 100 300 GR, G, G

■

Rank BL 200 600 BL, B

Rank GB 100 600 GB, GR, G, G

■

, BL, B

Rank YH 75 150 Y

■

Rank GRL 100 200 G

Rank GRH 150 300 G

■

Rank BLL 200 400 B

TLP281-4 Blank 50 600 Blank, GB

Rank GB 100 600 GB

Note 1: Ex. rank GB: TLP281 (GB)

Note: Application type name for certification test, please use standard product type name, i.e.

TLP281 (GB): T LP281, TLP28 1-4 (GB): T LP281-4

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Absolute Maximum Rati ngs (Ta = 25°C)

CHARACTERISTIC SYMBOL

RATING

UNIT

TLP281

TLP281-4

LED

Forward Current IF 50 mA

Forward Current Derating ∆IF/°C -0.7 (Ta≥53°C) -0.5 (Ta≥25°C) mA/°C

Pulse Forward Current

(100 μs pulse, 100 pps) IFP 1 A

Reverse Voltage VR 5 V

Diode power dissipation

PD 100 70 mW

Diode power dissipat i on derating

∆

PD/°C -1.39 (Ta≥53°C) -0.7 (Ta≥25°C) mW/°C

Junction Temperature Tj 125 °C

DETECTOR

Collector-Emitter Voltage VCEO 80 V

Emitter-Collector Voltage VECO 7 V

Collect or Current IC 50 mA

Collector Power Dissipation

(1 Circuit) PC 150 100 mW

Collector Power Dissipation

Derating(Ta≥25°C) (1 Circ uit ) ∆PC/°C -1.5 -1.0 mW/°C

Junction Temperature Tj 125 °C

Operating Temperature Range Topr -55 to 100 °C

Storage Temperature Range Tstg -55 to 125 °C

Lead Soldering Temperature (10 s) Tsol 260 °C

Total Package Power Dissipation

(1 Circuit)

PT 200 170 mW

Total Package Power Dissipation

Derating (Ta≥25°C) (1 Circu i t) ∆PT/°C -2.0 -1.7 mW/°C

Isolation Voltage

(AC, 60 s, R.H.≤ 60%) (Note 1) BVS 2500 Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data ( i.e. reliabil ity test

report and estimated failure rate, etc).

Note 1: Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted

together.

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Electrical Characteristics (Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITIO N MIN TYP. MAX UNIT

LED

Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V

Reverse Current IR VR = 5 V — — 10 μA

Capacitance CT V = 0 V, f = 1 MHz — 30 — pF

DETECTOR

Collector-Emitter Breakdown Voltage V(BR) CEO IC = 0.5 mA 80 — — V

Emitter-Collector Breakdown Voltage V(BR) ECO IE = 0.1 mA 7 — — V

Collect or Dark Current (Note 1)

ICEO

VCE = 48 V — 0.01 0.1 μA

Ambient Light Bel ow (100 ℓx)

(Note 2)

— 2 10

VCE = 48 V, Ta = 85°C — 2 50 μA

Ambient Light Bel ow (100 ℓx)

(Note 2)

— 4 50

Capacitance (Collector to Emitter) CCE V = 0 V, f = 1 MHz — 10 — pF

Note 1: Because of the construction,leak current might be increased by ambient light.

Please use photocoupler with less ambient light.

Note 2: Irradiation to marking side using standard light bulb.

Coupled Electrical Characteristics (Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITIO N MIN TYP. MAX UNIT

Current Transf er Ratio IC/IF IF = 5 mA, VCE = 5 V Rank GB

50 — 600 %

100 — 600

Saturated CTR IC/IF(sat) IF = 1 mA, VCE = 0. 4 V Rank GB

— 60 — %

30 — —

Collector-Emitter

Saturati on Voltage VCE(sat)

IC = 2.4 mA, IF = 8 mA — — 0.4

IC = 0.2 mA, IF = 1 mA Rank GB

— 0.2 —

— — 0.4

Off-State Collector Current IC(off) VF = 0.7 V, VCE = 48 V — — 10 μA

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Isolation Characteristics (Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITIO N MIN TYP. MAX UNIT

Capacitance

(Input to Output)

CS VS = 0 V, f = 1 MHz — 0.8 — pF

Isolation Resist ance RS VS = 500 V, R.H. ≤ 60% 5×1010 1014 — Ω

Isolation Voltage BVS

AC, 60 s 2500 — — Vrms

AC, 1 s, in oil — 5000 —

DC, 60 s, in oil — 5000 — Vdc

Switching Characteristics (Ta = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITIO N MIN TYP. MAX UNIT

Rise Time tr

VCC = 10 V, IC = 2 mA

RL = 100 Ω

— 2 —

μs

Fall Time tf — 3 —

Turn-On Time ton — 3 —

Turn-Off Time toff — 3 —

Turn-On Time tON RL = 1.9 kΩ (Fig.1)

VCC = 5 V, IF = 16 mA

— 2 —

μs Storage Time ts — 25 —

Turn-Off Time tOFF — 40 —

Fig.1: SWITCHING TIME TEST CIRCUIT

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TLP281

TLP281-4

TLP281

TLP281-4

*The above graphs show typical characteristic.

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*The above graphs show typical characteristic.

Forward current IF (mA)

IC / IF – IF

Current transfer ratio

IC / IF (%)

VCE = 10V

VCE = 5V

VCE = 0.4V

Sample B

Sample A

1000

100 10 1 0.1

100

TLP281,TLP281-4

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*The above graphs show typical characteristic.

TLP281,TLP281-4

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