2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 * MIL-PRF-19500/357 Qualified * Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Characteristic Symbol 2N3634/L 2N3635/L 2N3636/L 2N3637/L Unit Collector -Emitter Voltage VCEO -140 -175 Vdc Collector -Base Voltage VCBO -140 -175 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25C PT 1.0 W Total Device Dissipation @ TC = 25C PT 5.0 W TJ, Tstg -65 to +200 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Ambient Characteristic RqJA 175 C/W Thermal Resistance, Junction to Case RqJC 35 C/W 1 EMITTER TO-5 CASE 205AA STYLE 1 2N3634L 2N3635L 2N3636L 2N3637L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Level Device Package Shipping TO-39 Bulk TO-5 Bulk 2N3634 2N3635 JAN JANTX JANTXV JANHC 2N3636 2N3637 2N3634L 2N3635L 2N3636L TO-39 CASE 205AB STYLE 1 2N3634 2N3635 2N3636 2N3637 2N3637L (c) Semiconductor Components Industries, LLC, 2013 January, 2013 - Rev. 0 1 Publication Order Number: 2N3637/D 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit -140 -175 - - - - -50 -10 nA mA - -10 mA - - - -100 -10 -10 nA mA mA 25 45 50 50 30 - - - 150 - 55 90 100 100 60 - - - 300 - - - -0.3 -0.6 - -0.65 -0.8 -0.9 1.5 2.0 8.0 8.5 40 80 160 320 - 10 - 75 - - - 5.0 3.0 3.0 OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mA) 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO Emitter-Base Cutoff Current (VEB = -3.0 V) (VEB = -5.0 V) IEBO Collector-Emitter Cutoff Current (VCE = -100 V) ICEO Collector-Base Cutoff Current (VCB = -100 V) (VCB = -140 V) (VCB = -175 V) ICBO 2N3634, 2N3635 2N3636, 2N3637 V ON CHARACTERISTICS (Note 1) DC Current Gain (IC = -0.1 mA, VCE = -10 V) (IC = -1.0 mA, VCE = -10 V) (IC = -10 mA, VCE = -10 V) (IC = -50 mA, VCE = -10 V) (IC = -150 mA, VCE = -10 V) 2N3634, 2N3636 hFE DC Current Gain (IC = -0.1 mA, VCE = -10 V) (IC = -1.0 mA, VCE = -10 V) (IC = -10 mA, VCE = -10 V) (IC = -50 mA, VCE = -10 V) (IC = -150 mA, VCE = -10 V) 2N3635, 2N3637 hFE Collector -Emitter Saturation Voltage (IC = -10 mA, IB = -1.0 mA) (IC = -50 mA, IB = -5.0 mA) VCE(sat) Base -Emitter Saturation Voltage (IC = -10 mA, IB = -1.0 mA) (IC = -50 mA, IB = -5.0 mA) VBE(sat) - - V V SMALL-SIGNAL CHARACTERISTICS Magnitude of Small-Signal Current Gain (IC = -30 mA, VCE = -30 V, f = 100 MHz) Small-Signal Current Gain (IC = -10 mA, VCE = -10 V, f = 1 kHz) 2N3634, 2N3636 2N3635, 2N3637 2N3634, 2N3636 2N3635, 2N3637 |hfe| hfe Output Capacitance (VCB = -20 V, IE = 0 A, 100 kHz f 1.0 MHz) Cobo Input Capacitance (VEB = -1.0 V, IC = 0 A, 100 kHz f 1.0 MHz) Cibo Noise Figure (VCE = -10 V, IC = -0.5 mA, Rg = 1 kW, f = 100 Hz) (VCE = -10 V, IC = -0.5 mA, Rg = 1 kW, f = 1.0 kHz) (VCE = -10 V, IC = -0.5 mA, Rg = 1 kW, f = 10 kHz) NF - - pF pF dB SWITCHING CHARACTERISTICS Delay Time (Reference Figure 11 in MIL-PRF-19500/357) td - 100 ns Rise Time (Reference Figure 11 in MIL-PRF-19500/357) tr - 100 ns Storage Time (Reference Figure 11 in MIL-PRF-19500/357) ts - 500 ns Fall Time (Reference Figure 11 in MIL-PRF-19500/357) tf - 150 ns Turn-Off Time (Reference Figure 11 in MIL-PRF-19500/357) toff - 600 ns 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L PACKAGE DIMENSIONS TO-5 3-Lead CASE 205AA ISSUE B B A B DETAIL X U P C U L R F A SEATING PLANE K NOTE 5 E T NOTE 7 D 3X NOTES 4 & 6 0.007 (0.18MM) A B S C DETAIL X M N H 2 1 3 J M C LEAD IDENTIFICATION DETAIL http://onsemi.com 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. 8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 8.89 9.40 8.00 8.51 6.10 6.60 0.41 0.53 0.23 3.18 0.41 0.48 0.71 0.86 0.73 1.02 38.10 44.45 6.35 --45_BSC 5.08 BSC --1.27 1.37 BSC --0.76 2.54 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR INCHES MIN MAX 0.350 0.370 0.315 0.335 0.240 0.260 0.016 0.021 0.009 0.125 0.016 0.019 0.028 0.034 0.029 0.040 1.500 1.750 0.250 --45 _BSC 0.200 BSC --0.050 0.054 BSC --0.030 0.100 --- 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L PACKAGE DIMENSIONS TO-39 3-Lead CASE 205AB ISSUE A B A B DETAIL X U P C L R F U A SEATING PLANE K NOTE 5 E T NOTE 7 D NOTES 4 & 6 0.007 (0.18MM) A B S C 3X DETAIL X M N H 2 1 3 J M C LEAD IDENTIFICATION DETAIL NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. 8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 8.89 9.40 8.00 8.51 6.10 6.60 0.41 0.48 0.23 3.18 0.41 0.48 0.71 0.86 0.73 1.02 12.70 14.73 6.35 --45_BSC 5.08 BSC --1.27 1.37 BSC --0.76 2.54 --- INCHES MIN MAX 0.350 0.370 0.315 0.335 0.240 0.260 0.016 0.019 0.009 0.125 0.016 0.019 0.028 0.034 0.029 0.040 0.500 0.580 0.250 --45 _BSC 0.200 BSC --0.050 0.054 BSC --0.030 0.100 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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