Wb BE Beae7esu anags9a 4 : mae a a FE) gsp 80593 DO 367254- MOTOROLA. SC CXSTRS/R F eS qe Zpeu oro - BD433, BD435 Es SEMICONDUCTOR me) =6BD437,BD439 |m TECHNICAL DATA BD441 4 AMPERE PLASTIC MEDIUM POWER SILICON POWER TRANSISTOR NPN TRANSISTOR NPN SILICON . for amplifier and switching applications Complementary types: BD434/436/438/440/442 MAXIMUM RATINGS Rating Symbol Type Value Unit rs Collector Emitter Voltage Vceo | 80433 22 Vde v BD435 32 cae a f BD437 45 these A 80439 60 Nd 4g 8D441 80 Caltector Base Voltage Vego | 80433 22 Vde PV ts K 6D435 32 8D437 45 80439 60 < BD441 80 D a J wighe [RF Emitter Base Voltage VeBo 5 Vde 4 sme Nae 2 ! Collector current te 4 Ade M + ose Base Current Ig 1 Adc ROTES Total Device Dissipation Pp Watts 1 ADS TRUE PS MORED WTHRN azsnm note) Tce = 26C 36 mW/eG DIA TO DM A & @ AT MAXIMUM MATERIAL Derate above 25C 288 Operating and Storage Junction Temperature range. Vy bstg 5 0 +150} C THERMAL CHARACTERISTICS CASE 77-05 Symbol Max. Unit TO-126 . Thermal Resistance Junction to Case Gc 3.5 CiW 3-327 | 11 sae AierRnnSiNTY Ye =e a i eee ee MOTOROLA SC {XSTRS/R FF Ab De e3e7ess oo0a8o0s44 Q a - . 6367254. -MOTOROLA SC .(XSTRS/R F) s_-96D. 80594 po BD433, BD435, BD437, BD439, BD441 Tr. 3 Z-/ / ELECTRICAL CHARACTERISTICS (Tc 25 C unless otherwise noted} | Cheractaristics | Symbol | Min, | Typ. | Max. | Unit Collector Emitter Breakdown Voltage (lg = 100 mA, tg =0) BD433 BVcEO 22 Vde 7 BD435 32 80437 45 BD439 60 80441 80 Collector Base Breakdown Voltage {ic = 100 BA, Ig = 0) 8D433 BYcBO 22 Vdc BD435 32 80437 45 bD4a39 60 80441 80 Emitter Base Breakdown Voltage (fe = 100 BA, Ig = 0) BVepo 5 Vde Collector Cutotf Current . (Veg = 22 V, Ie = 0) 60433 ICBO 0.1 mAdc (Vcp = 32 V, Ie = 0} > BD435 0.1 (Veg = 45 V, Ie = 0} BD437 0.1 (Vcg = 60 V, Ie = 0} BD439 01 (Veg = 80 V, Ie = 0} 6D441 0.1 Emitter Cutoff Current - (VeB=5Vb leBo 1 mAdc OC Current Gain {le = 10 mA, Vee = 5 V) 8D433 Hee 40 - BD435 40 8D437 30 BD439 20 BO441 15 DE Current Gain . (Wc = 500 mA, Vee = 1 Vd 6D433 Hee 85 475 BD435 85 475 BD437 85 375 BD439 40 475 BD44t 40 475 OC Current Gain tle = 2A, Voce = 1V) BD433 Hee 50 BD435 50 6D437 40 8D439 28 BD441 18 Collector Saturation Voltage lic = 24, 1g = 0.2 A} BOD433 VCE (sath 0.5 Vde BD435 0.5 : ig = 3A, tg = 0.3 A} 6D437 o7 : BDa39 08 ! BD441 08 Base Emitter on voltage BD433/435/437 VBE(ON) 1.4 Vdc tle = 2A, Voce = 1V) BD435/441 1.5 Current Gain Bandwidth Product (Voce = 1 V,I = 250 mA, f = 1 MHz) fT 3 MHz Aeentherhterermanne tet iMOTOROLA SC {XSTRS/R FI Wb DE eae72es4 oososis 2 Bf eae ee eee = pee ew EE te eee ee we - =e -aes 6367254 MOTOROLA. SC (XSTRS/R F).. 96D 80595 D_. BD433, BD435, BD437, BD439, BD441 T-33-/1 FIGURE 1 COLLECTOR SATURATION REGION " Tn tet mettre Ae i to peinneet Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0 ! 005 oa? a1 az a3 05 07 +10 2000 (30 50 70 10 20 30 so 70 100 200 30) 0s00tt- Ip. BASE CURRENT (mA) i FIGURE 2 CURRENT GAIN - hee, CURRENT GAIN (Normahzed) ! ic, COLLECTOR CURRENT (Amp} FIGURE 3 ~ ON VOLTAGE FIGURE 4 ACTIVE REGION SAFE OPERATING AREA 10 20 Ty 250C a \s a? 1 e = z - a S12 = $ Fz s = 10 z 5 80433 5 08 VBE(sar} iC tg 410 3 8 Vee @ Vee - 20V a 95 3 Secondary breakdow 80437 ve 3 sem Therma! tim Te = 25C mee Banding wire limit 80439 @ Icllg= Curves apply below rated VCEQ BD441 0 ot 0005 001 002003005 01 0203 05 10 20 3040 to 20 50 10 20 s0 100 Ic, COLLECTOR CURRENT (AMP) Vce, COLLECTOR EMITTER VOLTAGE (Volts) 3-329