NPN Silicon Transistors NPN Silicon Transistors for high level audio applications . i e. tpn rr ee j i Lies =95; Maximum ratings Characteristics at Tamb 25C Type BVceo 8Vcgo BVeso 'cm Prot! Pror* Um beeltOV/150mA) hee Veglic) max Vog gaz(150MA/15mA) Case v v v A w w c {V/A) v BFX 84__ _ 60 100 6 1 O08 5 200 730 ___ 7 20 (10/05) BFx85 TOS 60 100 6 1% O8 5 200 >70 > 30 (10/05) + 0.35 BFX86 TOS 35 40 GOB B00 > 30 (10/05) 0.85 BFy50. TOS 35 80 108 200 > 30 16 6/1) BFY51 TOS 30 60 6 1 08 200 >40 S15 (6/1) | - BFY52 - 1 BFY 53 NKT 0028 705 NKT 0128 TOS_ 60 6b tt 200 80 250 ar NKT 10339 TO18 30 45 5 05 05 18 175 si 150 (10/0.1) NKT 10439 TOIS = 330, S45 5 05 05 1.8 175 100... 300 (10/0.1) PN1613 Plastic TOS 50 75 71 03 125 40...120 > 20 (1005) PN1711 __ Plastic 7 _ 5 7 103 125 100...300 > 40. (10/0.5) 2N697.. T0540 5. oe 2N1613 TOS 50 720 (10/05) dS 2N 1711 TOS 5 340 005) 2N 1893 TOB 235 (10/001) 2N 2297) TOS 35 718 WO 2N 3053, TOS _ 40 _ .7 1 C200 80 = 250 1.4 _ oO Tamb* 28C Derate linearly to Ty _ 5p9 iM Tcase 25C 3 BVceR (0.1A, 10 ohm) Plastic TO 18 Plastic TO 5 PHYSICAL DIMENSIONS 813 EPOXY PACKAGE 338 TO5 2 36 DIA max. 810 4-83 6-60 533 rb | | 38-10 e c 63 MIN t Ley 10 16 coef} J Lo 508 pase ct ders So 4:95 4-53 TO 18 2-79 533 2-29 ar 4 4:32 _ EMITTER 42-7 . MIN NOTES All dimensions in me \ COLLECIOR: