2007-06-08
1
BC807.../BC808...
PNP Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type:
BC817.../W, BC818.../W (NPN)
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
Type Marking Pin Configuration Package
BC807-16
BC807-16W
BC807-25
BC807-25W
BC807-40
BC807-40W
BC808-25
BC808-25W
BC808-40
BC808-40W
5As
5As
5Bs
5Bs
5Cs
5Cs
5Fs
5Fs
5Gs
5Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
1Pb-containing package may be available upon special request
2007-06-08
2
BC807.../BC808...
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BC807...
BC808...
VCEO
45
25
V
Collector-base voltage
BC807...
BC808...
VCBO
50
30
Emitter-base voltage VEBO 5
Collector current IC500 mA
Peak collector current ICM 1000
Base current IB100
Peak base current IBM 200
Total power dissipation-
TS 79 °C BC807, BC808
TS 130 °C BC807W, BC808W
Ptot
330
250
mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BC807, BC808
BC807W, BC808W
RthJS
215
80
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
2007-06-08
3
BC807.../BC808...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BC807...
IC = 10 mA, IB = 0 , BC808...
V(BR)CEO
45
25
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC807...
IC = 10 µA, IE = 0 , BC808...
V(BR)CBO
50
30
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
50
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0 IEBO - - 100 nA
DC current gain1)
IC = 100 mA, VCE = 1 V, hFE-grp. 16
IC = 100 mA, VCE = 1 V, hFE-grp. 25
IC = 100 mA, VCE = 1 V, hFE grp. 40
IC = 500 mA, VCE = 1 V
hFE
100
160
250
40
160
250
350
-
250
400
630
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA VCEsat - - 0.7 V
Base emitter saturation voltage1)
IC = 500 mA, IB = 50 mA VBEsat - - 1.2
1Pulse test: t < 300µs; D < 2%
2007-06-08
4
BC807.../BC808...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz fT- 200 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 8 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz Ceb - 60 -
2007-06-08
5
BC807.../BC808...
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp. 16
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
A
IC
1
10
2
10
3
10
hFE
105 °C
85 °C
65 °C
25 °C
-40 °C
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp. 25
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
A
IC
1
10
2
10
3
10
hFE
105 °C
85 °C
65 °C
25 °C
-40 °C
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp. 40
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
A
IC
1
10
2
10
3
10
hFE
105 °C
85 °C
65 °C
25 °C
-40 °C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0
10
EHP00215
CEsat
V
0.4 V 0.8
-1
100
101
3
10
5
5
Ι
CmA
5
2
10
0.2 0.6
-50
25
150
˚C
˚C
˚C
2007-06-08
6
BC807.../BC808...
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
0
10
EHP00214
BEsat
V
2.0 V 4.0
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
1.0 3.0
˚C
-50
25
˚C
˚C
150
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
0
10
EHP00213
A
T
150
0
5
10
Ι
CBO
nA
50 100
1
10
2
10
4
10
˚C
typ
max
10
3
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10
EHP00210
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 2 4 6 8 10 12 14 16 V20
VCB/VEB
0
5
10
15
20
25
30
35
40
45
50
55
pF
65
CCB/CEB
CCB
CEB
2007-06-08
7
BC807.../BC808...
Total power dissipation Ptot = ƒ(TS)
BC807, BC808
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Total power dissipation Ptot = ƒ(TS)
BC807W, BC808W
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BC807, BC808
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
0
10
1
10
2
10
3
10
4
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = ƒ(tp)
BC807, BC808
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
-1
10
0
10
1
10
2
10
3
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
2007-06-08
8
BC807.../BC808...
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BC807W, BC808W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BC807W, BC808W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s tp
-1
10
0
10
1
10
2
10
3
10
K/W
RtthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
2007-06-08
9
BC807.../BC808...
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25 MBC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2007-06-08
10
BC807.../BC808...
Package SOT323
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
±0.1
0.9
12
3A
±0.2
2
-0.05
0.650.65
M
3x 0.1
0.1 MIN.
0.1
M
0.2 A
0.2
4
2.15 1.1
8
2.3
Pin 1
Pin 1
2005, June
Date code (YM)
BCR108W
Type code
0.6
0.8
1.6
0.65 0.65
Manufacturer
2007-06-08
11
BC807.../BC808...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.