FGH60N60SMD_F085 600V, 60A Field Stop IGBT Features General Description 175oC * Maximum Junction Temperature : TJ = Using Novel Field Stop IGBT Technology, Fairchild's new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. * Positive Temperaure Co-efficient for easy parallel operating * High current capability * Low saturation voltage: VCE(sat) = 1.8V(Typ.) @ IC = 60A * High input impedance Applications * Tightened Parameter Distribution * RoHS compliant * Automotive chargers, Converters, High Voltage Auxiliaries * Qualified to Automotive Requirements of AEC-Q101 * Solar Inverters, UPS, SMPS, PFC E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage 20 V IC o Collector Current @ TC = 25 C 120 A Collector Current @ TC = 100oC 60 A ICM (1) Pulsed Collector Current IF Diode Forward Current @ TC = 25oC Diode Forward Current @ TC = 100oC IFM(1) Pulsed Diode Maximum Forward Current PD 180 A 60 A 30 A 180 A W Maximum Power Dissipation @ TC = 25oC 600 Maximum Power Dissipation @ TC = 100oC 300 W TJ Operating Junction Temperature -55 to +175 o Tstg Storage Temperature Range -55 to +175 o TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds C C 300 oC Ratings Units Thermal Characteristics Symbol Parameter RJC(IGBT) ( 2) Thermal Resistance, Junction to Case 0.25 o RJC(Diode) Thermal Resistance, Junction to Case 1.1 oC/W Symbol RJA Parameter Thermal Resistance, Junction to Ambient (PCB Mount)(2) (c)2013 Fairchild Semiconductor Corporation FGH60N60SMD_F085 Rev. C1 1 C/W Typ. Units 45 oC/W www.fairchildsemi.com FGH60N60SMD_F085 600V 60A Field Stop IGBT December 2013 Device Marking Device Package Packing Type Qty per Tube FGH60N60SMD FGH60N60SMD_F085 TO-247 Tube 30ea For Fairchild's definition of "green" Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Electrical Characteristics of the IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V - 0.22 - V/oC - - 250 ICES at 80%*BVCES, 175 C - - 1100 A VGE = VGES, VCE = 0V - - 400 nA IC = 250uA, VCE = VGE Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250uA BVCES TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250uA ICES Collector Cut-Off Current VCE = VCES, VGE = 0V o IGES G-E Leakage Current On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 4.7 6.0 V IC = 60A, VGE = 15V - 1.8 2.5 V IC = 60A, VGE = 15V, TC = 175oC - 2.14 - V - 2780 3700 pF VCE = 30V, VGE = 0V, f = 1MHz - 260 345 pF - 80 110 pF - 22 29 ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 46 60 ns td(off) Turn-Off Delay Time - 116 151 ns tf Fall Time Eon Turn-On Switching Loss Eoff Ets VCC = 400V, IC = 60A, RG = 3, VGE = 15V, Inductive Load, TC = 25oC - 14 18 ns - 1.59 2.23 mJ Turn-Off Switching Loss - 0.39 0.55 mJ Total Switching Loss - 1.98 2.78 mJ td(on) Turn-On Delay Time - 22 28 ns tr Rise Time - 44 58 ns td(off) Turn-Off Delay Time - 124 161 ns tf Fall Time - 15 20 ns VCC = 400V, IC = 60A, RG = 3, VGE = 15V, Inductive Load, TC = 175oC Eon Turn-On Switching Loss - 2.41 3.13 mJ Eoff Turn-Off Switching Loss - 1.08 1.42 mJ Ets Total Switching Loss - 3.49 4.55 mJ Notes: 1:Repetitive rating: Pulse width limited by max junction temperature. 2:Rthjc for TO-247 : according to Mil standard 883-1012 test method. Rthja for TO-247 : according to JESD51-2, test method environmental condition and JESD51-10, test boards for through hole perimeter leaded package thermal measurements. JESD51-3 : Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package. FGH60N60SMD_F085 Rev. C1 2 www.fairchildsemi.com FGH60N60SMD_F085 600V 60A Field Stop IGBT Package Marking and Ordering Information Symbol Qg Parameter Test Conditions Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 60A, VGE = 15V Electrical Characteristics of the Diode Symbol (Continued) Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Test Conditions IF = 30A Diode Reverse Recovery Charge FGH60N60SMD_F085 Rev. C1 Typ. Max Units - 187 280 nC - 20 29 nC - 92 138 nC Units TC = 25C unless otherwise noted IF =30A, dIF/dt = 200A/s Qrr Min. Min. Typ. Max TC = 25oC - 2.1 2.7 TC = 175oC - 1.48 - TC = 25oC - 33 42 - 115 - - 53 69 - 606 - TC = TC = 25oC TC = 3 175oC 175oC V ns nC www.fairchildsemi.com FGH60N60SMD_F085 600V 60A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics VGE= 20V 180 15V 12V 120 60 0 VGE = 20V 15V 12V 10V Collector Current, IC [A] Collector Current, IC [A] 180 Figure 2. Typical Output Characteristics 8V 120 10V 60 8V T C = 175oC TC = 25oC 0 2 4 6 8 Collector-Emitter Voltage, V CE [V] 0 10 Figure 3. Typical Saturation Voltage Characteristics 0 2 4 6 8 Collector-Emitter Voltage, V CE [V] 10 Figure 4. Transfer Characteristics 120 180 Collector Current, IC [A] Collector Current, IC [A] Common Emitter VCE = 20V 120 60 Common Emitter VGE = 15V o TC = 25 C 90 o TC = 175 C 60 30 o T C = 25 C o T C = 175 C 0 0 0 1 2 3 4 Collector-Emitter Voltage, V CE [V] 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4 8 Gate-Emitter Voltage,V GE [V] 12 Figure 6. Saturation Voltage vs. VGE 4 20 Common Emitter Common Emitter VGE = 15V Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, VCE [V] 0 120A 3 60A 2 IC = 30A 120A 12 60A 8 IC = 30A 4 0 1 25 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] FGH60N60SMD_F085 Rev. C1 T C = -40oC 16 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH60N60SMD_F085 600V 60A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE 20 Common Emitter o TC = 25 C 16 120A 12 60A 8 IC = 30A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] Common Emitter Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V] 20 o TC = 175 C 16 120A 12 60A 8 0 20 Figure 9. Capacitance Characteristics 4 Gate-Emitter Voltage, V GE [V] 1000 Coes Common Emitter VGE = 0V, f = 1MHz 100 C res 12 VCC = 100V 200V 6 3 Common Emitter o o 1 300V 9 TC = 25 C T C = 25 C 10 Collector-Emitter Voltage, V CE [V] 0 30 Figure 11. SOA Characteristics 0 50 100 150 Gate Charge, Qg [nC] 200 Figure 12. Turn-on Characteristics vs. Gate Resistance 300 1000 Common Emitter VCC = 400V, VGE = 15V IC = 60A 10s 100 o TC = 25 C 100 s 10 ms 10 o TC = 175 C Switching Time [ns] Collector Current, Ic [A] 20 15 C ies 50 8 12 16 Gate-Emitter Voltage, VGE [V] Figure 10. Gate charge Characteristics 10000 Capacitance [pF] IC = 30A 4 1ms tr 100 DC *Notes: 1 o 1. TC = 25 C td(on) o 2. TJ 175 C 3. Single Pulse 0.1 1 10 100 Collector-Emitter Voltage, V CE [V] FGH60N60SMD_F085 Rev. C1 10 1000 5 0 10 20 30 40 Gate Resistance, RG [] 50 www.fairchildsemi.com FGH60N60SMD_F085 600V 60A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 500 10000 Common Emitter VCC = 400V, VGE = 15V IC = 60A o 100 Switching Time [ns] td(off) o 1000 Switching Time [ns] TC = 25 C TC = 175 C tf 100 tr td(on) 10 Common Emitter VGE = 15V, RG = 3 o TC = 25 C o TC = 175 C 10 1 0 10 20 30 40 Gate Resistance, RG [] 0 50 30 60 Figure 15. Turn-off Characteristics vs. Collector Current 150 10 Eon Switching Loss [mJ] td(off) Switching Time [ns] 120 Figure 16. Switching Loss vs. Gate Resistance 1000 100 tf 10 Common Emitter VGE = 15V, RG = 3 1 Eoff Common Emitter VCC = 400V, VGE = 15V IC = 60A o TC = 25 C o TC = 25 C o TC = 175 C o TC = 175 C 1 90 Collector Current, IC [A] 0.1 0 30 60 90 120 150 0 10 20 30 40 50 Gate Resistance, RG [] Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching SOA Characteristics 300 50 Common Emitter VGE = 15V, RG = 3 100 Collector Current, IC [A] Switching Loss [mJ] o TC = 25 C 10 o TC = 175 C Eon 1 Eoff 10 Safe Operating Area o VGE = 15V, TC 175 C 0.1 0 30 60 90 120 1 150 Collector Current, IC [A] FGH60N60SMD_F085 Rev. C1 1 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGH60N60SMD_F085 600V 60A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Recovery Current 200 15 o TC = 25 C 100 o TC = 175 C Reverse Current Irr [A] Forward Current, IF [A] 12 o TC = 175 C 10 o T C = 125 C o TC = 75 C di/dt = 200A/ s 9 100A/ s 6 di/dt = 200A/ s 3 o TC = 25 C 1 0 100A/ s 1 2 3 Forward Voltage, V F [V] 0 4 0 Figure 21. Stored Charge 200 o TC = 25oC T C = 25 C Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 60 Figure 22. Reverse Recovery Time 800 200A/ s o T C = 175 C 600 di/dt = 100A/ s 400 200 0 20 40 Forwad Current, I F [A] 200A/ s 0 di/dt = 100A/ s 20 40 Forwad Current, IF [A] 150 200A/ s 100 di/dt = 100A/s 50 200A/ s 0 60 di/dt = 100A/s o TC = 175 C 0 20 40 60 Forward Current, IF [A] Figure 23. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 0.5 0.5 0.1 0.2 0.01 0.1 0.05 0.02 PDM 0.01 t1 single pulse t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] FGH60N60SMD_F085 Rev. C1 7 www.fairchildsemi.com FGH60N60SMD_F085 600V 60A Field Stop IGBT Typical Performance Characteristics FGH60N60SMD_F085 600V 60A Field Stop IGBT Mechanical Dimensions TO - 247AB (FKS PKG CODE 001) FGH60N60SMD_F085 Rev. C1 9 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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