©2013 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGH60N60SMD_F085 Rev. C1
FGH60N60SMD_F085 600V 60A Field Stop IGBT
December 2013
FGH60N60SMD_F085
600V, 60A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: VCE(sat) = 1.8V(Typ.) @ IC = 60A
• High input impedance
• Tightened Parameter Distribution
• RoHS compliant
• Qualified to Automotive Requirements of AEC-Q101
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop Trench IGBTs offer the optimum performance for
Automotive chargers, Solar Inverter, UPS and Digital Power
Generator where low conduction and switching losses are
essential.
Applications
• Automotive chargers, Converters, High Voltage Auxiliaries
• Solar Inverters, UPS, SMPS, PFC
Absolute Maximum Ratings
Thermal Characteristics
Symbol Description Ratings Units
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ± 20 V
ICCollector Current @ TC = 25oC120 A
Collector Current @ TC = 100oC60 A
ICM (1) Pulsed Collector Current 180 A
IFDiode Forward Current @ TC = 25oC60 A
Diode Forward Current @ TC = 100oC30 A
IFM(1) Pulsed Diode Maximum Forward Current 180 A
PDMaximum Power Dissipation @ TC = 25oC600 W
Maximum Power Dissipation @ TC = 100oC300 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
G
E
C
ECG
COLLECTOR
(FLANGE)
Symbol Parameter Ratings Units
RθJC(IGBT) Thermal Resistance, Junction to Case 0.25 oC/W
RθJC(Diode) Thermal Resistance, Junction to Case 1.1 oC/W
RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) 45 oC/W
(2)
Symbol Parameter Typ. Units
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FGH60N60SMD_F085 Rev. C1
FGH60N60SMD_F085 600V 60A Field Stop IGBT
Package Marking and Ordering Information
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Notes:
1:Repetitive rating: Pulse width limited by max junction temperature.
2:Rthjc for TO-247 : according to Mil standard 883-1012 test method. Rthja for TO-247 : according to JESD51-2, test method
environmental condition and JESD51-10, test boards for through hole perimeter leaded package thermal measurements.
JESD51-3 : Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package.
Device Marking Device Package Packing Type Qty per Tube
FGH60N60SMD FGH60N60SMD_F085 TO-247 Tube 30ea
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 - - V
ΔBVCES
ΔTJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 250uA -0.22-V/
oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250
μA
ICES at 80%*BVCES, 175o
IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE 3.5 4.7 6.0 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 60A, VGE = 15V
IC = 60A, VGE = 15V,
TC = 175oC-2.14- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
- 2780 3700 pF
Coes Output Capacitance - 260 345 pF
Cres Reverse Transfer Capacitance - 80 110 pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400V, IC = 60A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 25oC
-2229ns
trRise Time - 46 60 ns
td(off) Turn-Off Delay Time - 116 151 ns
tfFall Time - 14 18 ns
Eon
Eoff
Ets
td(on) Turn-On Delay Time
VCC = 400V, IC = 60A,
RG = 3Ω, VGE = 15V,
Inductive Load, TC = 175oC
-2228ns
trRise Time - 44 58 ns
td(off) Turn-Off Delay Time - 124 161 ns
tf
Eon Turn-On Switching Loss - 2.41 3.13 mJ
Eoff
Ets
C - - 1100
Turn-On Switching Loss - 1.59 2.23 mJ
Turn-Off Switching Loss - 0.39 0.55 mJ
Turn-Off Switching Loss - 1.08 1.42 mJ
Total Switching Loss - 1.98 2.78 mJ
Fall Time - 15 20 ns
Total Switching Loss - 3.49 4.55 mJ
-1.82.5V
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FGH60N60SMD_F085 Rev. C1
FGH60N60SMD_F085 600V 60A Field Stop IGBT
Electrical Characteristics of the IGBT (Continued)
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Units
QgTotal Gate Charge VCE = 400V, IC = 60A,
VGE = 15V
- 187 280 nC
Qge Gate to Emitter Charge - 20 29 nC
Qgc Gate to Collector Charge - 92 138 nC
Symbol Parameter Test Conditions Min. Typ. Max Units
VFM Diode Forward Voltage IF = 30A TC = 25oV
TC = 175oC- 1.48 -
trr Diode Reverse Recovery Time
IF =30A, dIF/dt = 200A/μs
TC = 25oC - 33 42 ns
TC = 175oC- 115 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 53 69 nC
TC = 175oC - 606 -
2.7C - 2.1
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FGH60N60SMD_F085 Rev. C1
FGH60N60SMD_F085 600V 60A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
0246810
0
60
120
180
8V
VGE= 20V
TC = 25oC
15V
12V 10V
Co lle c tor C urre nt, I C [A]
Co lle cto r-E mit ter Volt a ge, VCE [V]
0246810
0
60
120
180
8V
VGE= 20V
TC = 17 5oC
15V 12V
10V
Co lle c tor C urre nt, I C [A]
Co lle cto r-E mit ter Volt a ge, VCE [V]
012345
0
60
120
180
C ommon Emitter
VGE = 15V
TC = 25 oC
TC = 17 5oC
Colle ctor Cu rrent, I C [A ]
Co lle cto r-E mit ter Vol ta ge, VCE [V]
04812
0
30
60
90
120 Comm on Em it t er
VCE = 2 0V
TC = 2 5oC
TC = 1 75oC
Collector Current, IC [A]
Ga te-Emi tter Voltag e,VGE [V]
25 50 75 100 125 150 175
1
2
3
4
60A
120A
IC = 3 0A
Co mmon Emi tter
VGE = 15V
C ollector- Emitt er Voltage, VCE [V]
C o llector- Emit terCase T emperat u re, TC [oC]
48121620
0
4
8
12
16
20
IC = 3 0A
120A
60A
C ommon Emitter
TC = - 40 oC
Collec tor-Emi tter Volta ge, VCE [V]
Gate-Emitter Voltage, VGE [V]
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FGH60N60SMD_F085 Rev. C1
FGH60N60SMD_F085 600V 60A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
48121620
0
4
8
12
16
20
IC = 3 0A
120A
60A
Common Emitter
TC = 2 5oC
Collec tor-Emi tter Volta ge, VCE [V]
Gate-Emitter Voltage, VGE [V]
4 8 12 16 20
0
4
8
12
16
20
IC = 3 0A
120A
60A
Common Emitter
TC = 1 75 oC
Collec tor-Emi tter Volta ge, VCE [V]
Gate-Emitter Voltage, VGE [V]
110
50
100
1000
10000
C ommon Emitter
VGE = 0 V , f = 1MHz
TC = 2 5oC
Cres
Coes
Cies
Ca pacitance [pF]
Colle ctor- Emit te r V oltage, VCE [V] 30
0 50 100 150 200
0
3
6
9
12
15
200V
C o mmo n Emitter
TC = 25oC
VCC = 1 00V 300V
Gate-Em itter Voltage, VGE [V]
Gate Charge, Qg [nC ]
1 10 100 1000
0.1
1
10
100
300
1ms
10 ms
DC
*Notes:
1. TC = 25 oC
2. TJ ≤ 175oC
3. Single Pulse
10μs
100μs
Col le ctor Current, Ic [A]
Co lle cto r-Em it ter Volt a ge, VCE [V ]
01020304050
10
100
1000
Swi tc hing Time [ns]
Comm on Em it t er
VCC = 400V, VGE = 15V
IC = 60A
TC = 25 oC
TC = 17 5oC
td(on)
tr
Gat e R e sis tance , R G [Ω]
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FGH60N60SMD_F085 Rev. C1
FGH60N60SMD_F085 600V 60A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
0 1020304050
10
100
1000
10000
Sw itchi ng Ti me [ns]
Com mon Em it t e r
VCC = 4 00V, VGE = 1 5V
IC = 6 0A
TC = 25oC
TC = 175oC td(off)
tf
Ga t e R e sis t ance , R G [Ω]
0306090120150
1
10
100
500
Common Emitt er
VGE = 15V, RG = 3 Ω
TC = 2 5oC
TC = 1 75 oC
tr
td(on)
S wi tching Time [ns]
Collector Cur r ent, IC [A ]
0306090120150
1
10
100
1000
Comm on Em itter
VGE = 1 5V , RG = 3 Ω
TC = 2 5oC
TC = 1 75oC
td(off)
tf
S witc hing Tim e [ns]
Colle ct or Curr en t , I C [A]
0 1020304050
0.1
1
10
Com mon Em it te r
VCC = 4 00V , VGE = 15 V
IC = 6 0A
TC = 25oC
TC = 175oC
Eon
Eoff
S witc hing Loss [mJ]
Gate Resistance, RG [Ω]
0306090120150
0.1
1
10
50 Com mon E mit te r
VGE = 15 V, RG = 3 Ω
TC = 25oC
TC = 175oC
Eon
Eoff
S witc hing Loss [mJ]
Collector Current, IC [A]
1
1
10
100
300
Safe Operati ng A r ea
VGE = 1 5V, TC ≤ 175oC
Coll ector Cur rent, IC [A ]
Collector-Emitter Voltage, VCE [V]
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FGH60N60SMD_F085 Rev. C1
FGH60N60SMD_F085 600V 60A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics Figure 20. Reverse Recovery Curre nt
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
Figure 23. Transient Thermal Impedance of IGBT
01234
1
10
100
200
TC = 1 75 oC
TC = 7 5oC
TC = 2 5oC
TC = 12 5oC
Forw ard Vol ta ge, VF [V]
Forw ard Current, IF [A]
0204060
0
3
6
9
12
15 TC = 25 oC
TC = 17 5oC
di/ dt = 200A / μs
100A/μs
di/ dt = 200A/ μs
100A/μs
Reve r se Curr ent I rr [A ]
Forwad Current, I F [A]
0 204060
0
200
400
600
800
200A/μs
200A/μs
di/dt = 100A/μs
di /dt = 100A/ μs
TC = 2 5oC
TC = 1 75oC
St ored R e co very Charge, Qrr [n C ]
Forwad Current , I F [A ]
0204060
0
50
100
150
200
TC = 25 oC
TC = 17 5oC di/dt = 100 A/μs
200A/μs
di /dt = 100A/μs
200A/μs
Reverse Recovery Time, trr [n s ]
Forw ard Curr ent, I F [A]
1E-5 1E-4 1E-3 0.01 0.1
1E-3
0.01
0.1
0.5
0.01
0.02
0.1
0.05
0.2
single pulse
The rmal Response [Zthjc]
R ectangular Pu lse D urat io n [sec]
Duty Fac t or, D = t 1/t2
Pea k T j = P dm x Zthjc + TC
0.5
t1
PDM
t2
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FGH60N60SMD_F085 Rev. C1
FGH60N60SMD_F085 600V 60A Field Stop IGBT
Mechanical Dimensions
TO - 247AB (FKS PKG CODE 001)
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Rev. I66
tm
®
