VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com Vishay Semiconductors
Revision: 14-Sep-17 1Document Number: 94538
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Three Phase Bridge (Power Modules), 45 A to 100 A
FEATURES
•Low V
F
• Low profile package
• Direct mounting to heatsink
• Flat pin/round pin versions with PCB solderable
terminals
• Low junction to case thermal resistance
• 3500 VRMS insulation voltage
• UL approved file E78996 vie
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Power conversion machines
•Welding
•UPS
•SMPS
• Motor drives
• General purpose and heavy duty application
DESCRIPTION
A range of extremely compact three phase rectifier bridges
offering efficient and reliable operation. The low profile
package has been specifically conceived to maximize space
saving and optimize the electrical layout of the application
specific power supplies.
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IO45 A to 100 A
VRRM 1600 V
Package MTP
Circuit configuration Three phase bridge
MT...PA MT...PB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES
40MT
VALUES
70MT
VALUES
100MT UNITS
IO
45 75 100 A
TC100 80 80 °C
IFSM
50 Hz 270 380 450 A
60 Hz 280 398 470
I2t50 Hz 365 724 1013 A2s
60 Hz 325 660 920
I2t 3650 7240 10 130 A2s
VRRM 1600 V
TStg Range -40 to 125 °C
TJ-40 to 150
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE CODE
REVERSE VOLTAGE
V
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
V
IRRM MAXIMUM AT
TJ = 150 °C
mA
VS-40MT160P, VS-70MT160P,
VS-100MT160P 160 1600 1700 5
VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com Vishay Semiconductors
Revision: 14-Sep-17 2Document Number: 94538
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES
40MT
VALUES
70MT
VALUES
100MT UNITS
Maximum DC output
current at case
temperature
IO120° rect. to conduction angle
45 75 100 A
100 80 80 °C
Maximum peak, one cycle
forward, non-repetitive on
state surge current
IFSM
t = 10 ms No voltage
reapplied
Initial
TJ = TJ maximum
270 380 450
t = 8.3 ms 280 398 470
t = 10 ms 100 % VRRM
reapplied
225 320 380
t = 8.3 ms 240 335 400
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
365 724 1013
A2s
t = 8.3 ms 325 660 920
t = 10 ms 100 % VRRM
reapplied
253 512 600
t = 8.3 ms 240 467 665
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 3650 7240 10 130 A2s
Value of threshold voltage VF(TO) TJ maximum 0.78 0.82 0.75 V
Slope resistance rt14.8 9.5 8.1 m
Maximum forward voltage
drop VFM TJ = 25 °C; tp = 400 μs single junction
(40MT, Ipk = 40 A) (70MT, Ipk = 70 A) (100MT, Ipk = 100 A) 1.45 1.45 1.51 V
INSULATION TABLE
PARAMETER SYMBOL TEST CONDITIONS VALUES
40MT
VALUES
70MT
VALUES
100MT UNITS
RMS insulation voltage VINS TJ = 25 °C, all terminal shorted, f = 50 Hz, t = 1 s 3500 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBO
LTEST CONDITIONS VALUES
40MT
VALUES
70MT
VALUES
100MT UNITS
Maximum junction operating
temperature range TJ- 40 to 150
°C
Maximum storage
temperature range TStg - 40 to 125
Maximum thermal resistance,
junction to case RthJC
DC operation per module 0.27 0.23 0.19
K/W
DC operation per junction 1.6 1.38 1.14
120° rect. conduction angle per module 0.38 0.29 0.22
120° rect. conduction angle per junction 2.25 1.76 1.29
Maximum thermal resistance, case to
heatsink per module RthCS
Mounting surface smooth, flat and greased
Heatsink compound therm a l c o n d u c t i v i t y
= 0.42 W/mK
0.1
Mounting torque to heatsink
± 10 %
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 h to allow for the spread of the
compound. Lubricated threads
4Nm
Approximate weight 65 g
CLEARANCE AND CREEPAGE DISTANCES
PARAMETER TEST CONDITIONS MT...PA MT...PB UNITS
Clearance External shortest distances in air between terminals
which are not internally short circuited together 10.9 12.3 mm
Creepage distance Shortest distance along external surface of the insulating material
between terminals which are not internally short circuited together
VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com Vishay Semiconductors
Revision: 14-Sep-17 3Document Number: 94538
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - On-State Voltage Drop Chracteristics
Fig. 3 - Maximum Non-Repetitive Surge Current
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink)
Total Output Current (A)
Maximum Allowable Case Temperature (°C)
80
90
100
110
120
130
140
150
160
0 1020304050
120˚
(Rect)
40MT...P
R (DC) = 0.27 K/W
Per Module
thJC
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
1
10
100
1000
0123456
Tj = 150˚C
Tj = 25˚C
40MT...P
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
50
100
150
200
250
110100
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
40MT...P
Per Junction
Pulse Train Duration(s)
Peak Half Sine Wave On-state Current (A)
50
100
150
200
250
300
0.01 0.1 1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T j = 150˚C
No Voltage Reapplied
Rated V rrm Reapplied
40MT...P
Per Junction
Maximum Allowable Ambient Temperature (°C)Total Output Current (A)
Maximum Total Power Loss (W)
0
30 60 90 120 150
RthSA = 0.1 K/W - Delta R
0.3 K/W
0.4 K/W
0.5 K/W
1 K/W
0.2 K/W
0
50
100
150
200
250
0 102030405060
120˚
(Rect)
Tj = 150˚C
40MT...P
VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com Vishay Semiconductors
Revision: 14-Sep-17 4Document Number: 94538
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 6 - Current Rating Characteristics
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Current Rating Nomogram (1 Module Per Heatsink)
Total Output Current (A)
Maximum Allowable Case Temperature (°C)
60
70
80
90
100
110
120
130
140
150
160
0 1020304050607080
120˚
(Rect)
70MT...P
R (DC) = 0.23 K/W
Per Module
thJC
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
1
10
100
1000
012345
Tj = 150˚C
Tj = 25˚C
70MT...P
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
100
150
200
250
300
350
110100
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
70MT...P
Per Junction
Pulse Train Duration(s)
Peak Half Sine Wave On-state Current (A)
50
100
150
200
250
300
350
400
0.01 0.1 1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T j = 150˚C
No Voltage Reapplied
Rated V rrm Reapplied
70MT...P
Per Junction
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Maximum Total Power Loss (W)
0306090120150
RthSA = 0.1 K/W - Delta R
0.3 K/W
0.4 K/W
0.5 K/W
1 K/W
0.2 K/W
0
50
100
150
200
250
300
020406080
120˚
(Rect)
Tj = 150˚C
70MT...P
VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com Vishay Semiconductors
Revision: 14-Sep-17 5Document Number: 94538
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Current Rating Characteristics
Fig. 12 - On-State Voltage Drop Characteristics
Fig. 13 - Maximum Non-Repetitive Surge Current
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Current Rating Nomogram (1 Module Per Heatsink)
Total Output Current (A)
Maximum Allowable Case Temperature (°C)
40
60
80
100
120
140
40 50 60 70 80 90 100 110 120 130
120˚
(Rect)
Per Module
100MT...P
R (DC) = 0.19 K/W
thJC
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4
Tj = 150˚C
Tj = 25˚C
100MT...P
Pulse Train Duration(s)
Peak Half Sine Wave On-state Current (A)
0
50
100
150
200
250
300
350
400
450
500
0.01 0.1 1 10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Initial T j = 125˚C
No Voltage Reapplied
Rated V rrm Reapplied
Of Conduction May Not Be Maintained.
100MT...P
Per Junction
Maximum Allowable Ambient Temperature (°C)Total Output Current (A)
Maximum Total Power Loss (W)
0
30 60 90 120 150
0.05 K/W
RthSA = 0.025 K/W - Delta R
0.5 K/W
1 K/W
0.3 K/W
0.2 K/W
0.1 K/W
0
100
200
300
400
500
020406080100
120˚
(Rect)
Tj = 150˚C
100MT...P
VS-40MT160P.PbF, VS-70MT160P.PbF, VS-100MT160P.PbF
www.vishay.com Vishay Semiconductors
Revision: 14-Sep-17 6Document Number: 94538
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 16 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z thJC (K/W)
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Steady State Value
RthJC per junction =
1.6 K/W (40MT...P)
1.38 K/W (70MT...P
1.14 K/W (100MT...P)
DC Operation)
40MT...P
70MT...P
100MT...P
2- Current rating code
3- Circuit conguration code: 0 = three phase rectier bridge
4-Essential part number
5- Voltage code x 10 = VRRM (see Voltage Ratings table)
6- Pinout code
4 = 45 A
7 = 75 A
10 = 100 A
7- Lead (Pb)-free
A = at pins
B = round pins
Device code
62
143 5 7
10 0 MT 160 P B PbF
1
VS-
-Vishay Semiconductors product
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95244
Document Number: 95244 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 07-Nov-07 1
MTP Flat and Round Pin
Outline Dimensions
Vishay Semiconductors
DIMENSIONS FOR MTP WITH FLAT PIN in millimeters
4
2.5
42 ± 0.1
714 2
44.5
7
7
7
77.4
Ø 5.2 (x 2)
4321
57
1.3
14 14
39.5
48.7
63.5 ± 0.25
32.5 ± 0.5
27.5
22
22
0.5
5.5
Ø 5
16 12 ± 0.5
10.5
5.5
0.5
Electrical
circuit
3, 4
5
6
7
1, 2
6
12
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 95244
2Revision: 07-Nov-07
Outline Dimensions
Vishay Semiconductors MTP Flat and Round Pin
DIMENSIONS FOR MTP WITH ROUND PIN in millimeters
44.5
32.5 ± 0.1
27.5
22
1.3
14 14
39.5
48.7
63.5 ± 0.25
Electrical
circuit
3, 4
5
6
7
1, 2
7
7
7
7
4321
57
Ø 5.2 (x 2)
7.4
10.5
4
Ø 5
Ø 1.1
12 ± 0.5
16
31.8
12
2.5
4
Ø 5 14
7
7
6
20.5 ± 0.1
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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