TK22E10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK22E10N1 1. Applications * Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 11.5 m (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 unless otherwise specified) 25 4. Absolute Maximum Ratings (Note) (Ta = 25 Characteristics Drain-source voltage Gate-source voltage Drain current (DC) (Tc = 25) (Note 1) Drain current (DC) Drain current (pulsed) Power dissipation (t = 1 ms) Rating Unit VDSS 100 V VGSS 20 ID 52 A (Note 1,2) ID 22 (Note 1) IDP 102 PD 72 W (Note 3) EAS 48 mJ (Tc = 25) Single-pulse avalanche energy Symbol Avalanche current IAR 22 A Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1 2012-01 2014-06-30 Rev.4.0 TK22E10N1 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Rth(ch-c) 1.72 /W Channel-to-ambient thermal resistance Rth(ch-a) 83.3 Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Device mounted with heatsink so that Rth(ch-a) becomes 4.16/W. Note 3: VDD = 80 V, Tch = 25 (initial), L = 77.6 H, IAR = 22 A Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2014-06-30 Rev.4.0 TK22E10N1 6. Electrical Characteristics unless otherwise specified) 6.1. Static Characteristics (Ta = 25 25 Characteristics Symbol Gate leakage current IGSS VGS = 20 V, VDS = 0 V IDSS VDS = 100 V, VGS = 0 V Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage (Note 4) Typ. Max Unit 0.1 A 10 ID = 10 mA, VGS = -20 V 65 VDS = 10 V, ID = 0.3 mA 2.0 4.0 VGS = 10 V, ID = 11 A 11.5 13.8 ID = 10 mA, VGS = 0 V V(BR)DSX Vth RDS(ON) Min 100 V(BR)DSS Gate threshold voltage Drain-source on-resistance Test Condition V m Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. unless otherwise specified) 6.2. Dynamic Characteristics (Ta = 25 25 Characteristics Input capacitance Symbol Ciss Test Condition VDS = 50 V, VGS = 0 V, f = 1 MHz Min Typ. Max Unit 1800 pF Reverse transfer capacitance Crss 18 Output capacitance Coss 310 2.0 11 ns Gate resistance rg Switching time (rise time) tr Switching time (turn-on time) ton 27 tf 11 toff 38 Min Typ. Max Unit 28 nC Switching time (fall time) Switching time (turn-off time) See Figure 6.2.1 Fig. 6.2.1 Switching Time Test Circuit unless otherwise specified) 25 6.3. Gate Charge Characteristics (Ta = 25 Characteristics Total gate charge (gate-source plus gate-drain) Symbol Qg Test Condition VDD 80 V, VGS = 10 V, ID = 22 A Gate-source charge 1 Qgs1 8.7 Gate-drain charge Qgd 8.1 Gate switch charge QSW 12 3 2014-06-30 Rev.4.0 TK22E10N1 unless otherwise specified) 6.4. Source-Drain Characteristics (Ta = 25 25 Characteristics Symbol Test Condition Min Typ. Max Unit A Reverse drain current (DC) (Note 5) IDR 22 Reverse drain current (pulsed) (Note 5) IDRP 102 Diode forward voltage VDSF IDR = 22 A, VGS = 0 V -1.2 IDR = 22 A, VGS = 0 V -dIDR/dt = 100 A/s 54 ns 94 nC Reverse recovery time (Note 6) trr Reverse recovery charge (Note 6) Qrr V Note 5: Ensure that the channel temperature does not exceed 150. Note 6: Ensure that VDS peak does not exceed VDSS. 7. Marking Fig. 7.1 Marking 4 2014-06-30 Rev.4.0 TK22E10N1 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta 5 2014-06-30 Rev.4.0 TK22E10N1 Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS Fig. 8.9 Vth - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 PD - Tc (Guaranteed Maximum) 6 2014-06-30 Rev.4.0 TK22E10N1 Fig. 8.12 rth/Rth(ch-c) - tw (Guaranteed Maximum) Fig. 8.13 Safe Operating Area (Guaranteed Maximum) Fig. 8.14 EAS - Tch (Guaranteed Maximum) Fig. 8.15 Test Circuit/Waveform Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 7 2014-06-30 Rev.4.0 TK22E10N1 Package Dimensions Unit: mm Weight: 1.93 g (typ.) Package Name(s) TOSHIBA: 2-10X1A Nickname: TO-220 8 2014-06-30 Rev.4.0 TK22E10N1 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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