SD101AW-V, SD101BW-V, SD101CW-V Vishay Semiconductors Small Signal Schottky Diodes Features * For general purpose applications * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications * The SD101 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring * These diodes are also available in the Mini-MELF case with type designations LL101A to LL101C, in the DO-35 case with type designations SD101A to SD101C and in the SOD-323 case with type designations SD101AWS-V to SD101CWS-V * AEC-Q101 qualified * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Weight: approx. 10.3 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part SD101AW-V Ordering code Type Marking Remarks SD101AW-V-GS18 or SD101AW-V-GS08 SA Tape and Reel SD101BW-V SD101BW-V-GS18 or SD101BW-V-GS08 SB Tape and Reel SD101CW-V SD101CW-V-GS18 or SD101CW-V-GS08 SC Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Peak reverse voltage Power dissipation (Infinite heatsink) Forward continuous current Maximum single cycle surge Document Number 85679 Rev. 1.6, 05-Aug-10 10 s square wave Part Symbol Value Unit SD101AW-V VRRM 60 V SD101BW-V VRRM 50 V SD101CW-V VRRM 40 V Ptot 4001) mW IF 30 mA IFSM 2 A For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 SD101AW-V, SD101BW-V, SD101CW-V Vishay Semiconductors Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Symbol Value Unit RthJA 3001) K/W Tj 1251) C Tstg - 65 to + 150 C Junction temperature Storage temperature range 1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition IR = 10 A Reverse breakdown voltage Leakage current Symbol Min V(BR) 60 Max Unit V SD101BW-V V(BR) 50 V 40 SD101CW-V VR = 50 V SD101AW-V IR 200 nA VR = 40 V SD101BW-V IR 200 nA VR = 30 V SD101CW-V IR 200 nA SD101AW-V VF 410 mV SD101BW-V VF 400 mV SD101CW-V VF 390 mV SD101AW-V VF 1000 mV SD101BW-V VF 950 mV SD101CW-V VF 900 mV SD101AW-V CD 2 pF SD101BW-V CD 2.1 pF SD101CW-V CD 2.2 pF trr 1 ns Forward voltage drop IF = 15 mA VR = 0 V, f = 1 MHz IF = IR = 5 mA, recover to 0.1 IR Reverse recovery time Typ. V(BR) IF = 1 mA Diode capacitance Part SD101AW-V V Typical Characteristics Tamb = 25 C, unless otherwise specified 100 A B C I F - Forward Current (mA) I F - Forward Current (mA) 10 1 0.1 0.01 18477 0.2 0.4 0.6 0.8 60 40 20 1.0 VF - Forward Voltage (V) Figure 1. Typical Variation of Forward Current vs. Forward Voltage www.vishay.com 2 80 0 0 A B C 18478 0 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) Figure 2. Typical Forward Conduction Curve For technical questions within your region, please contact one of the following: Document Number 85679 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.6, 05-Aug-10 SD101AW-V, SD101BW-V, SD101CW-V Vishay Semiconductors 2.0 125 C 10 100 C 75 C 1 50 C 0.1 25 C 1.4 1.2 10 20 30 40 C 0.6 0.4 0.2 0 18480 Figure 3. Typical Variation of Reverse Current at Various Temperatures B 0.8 50 VR - Reverse Voltage (V) 18479 A 1.0 0.01 0 T j = 25 C 1.8 1.6 CD - Typical Capacitance (pF) I R - Reverse Current (A) 100 0 10 20 30 40 50 VR - Reverse Voltage (V) Figure 4. Typical Capacitance Curve as a Function of Reverse Voltage 0.10 (0.004) 0.15 (0.006) 8 0.45 (0.018) 0.25 (0.010) 0 to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. Package Dimensions in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Document Number 85679 Rev. 1.6, 05-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000