A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIO NS MINI MUM TYPICAL MAXIMUM UNITS
BVCBO IC = 5.0 mA 50 V
BVCEO IC = 5.0 mA 20 V
BVEBO IE = 1.0 mA 3.5 V
ICBO VCB = 35 V 0.5 mA
hFE VCE = 5.0 V IC = 75 mA 10 100 ---
PG
η
ηη
ηCVCC = 35 V POUT = 4.0 W f = 1090 MHz 10
40 11
45 dB
%
NPN SILICON RF POWER TRANSISTOR
MRF1004MB
DESCRIPTION:
The ASI MRF1004MB is Designed fo r
Class B and C, TACAN, IFF, and DME
Applications up to 1090 MHz.
FEATURES:
• Class B and C Operation
• Common Base
• PG = 10 dB at 4.0 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC250 mA
VCE 20 V
PDISS 7.0 W @ T C = 25°C
TJ-65 OC to +200 °C
TSTG -65 OC to +150 °C
θ
θθ
θJC 25.0 OC/W
PACKAGE STYLE .280 4L PILL
MINIMUM
inches / mm
.004 / 0.10
.275 / 6.99
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
.285 / 7.24
.060 . 1.52
.130 / 3.30
.006 / 0.15
inches / mm
1.05 5 / 26. 8 0
DIM
.220 / 5.59 .230 / 5.84
.118 / 3.00
D
EF
ØB
ØC
A
B
B
CE
