STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-38294
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990 REVISION LEVEL
H SHEET
22
DSCC FORM 2234
APR 97
TABLE IA. Electrical performance characteristics - Continued.
│ │ Conditions 1/ │ │ │ │
Test │Symbol │ -55°C ≤ TC ≤ +125°C │Group A │Device │ Limits │Unit
│ │ GND = 0 V │subgroups │types │ │ │
│ │ 4.5 V ≤ VCC ≤ 5.5 V │ │ │ Min │ Max │
│ │ unless otherwise specified │ │ │ │ │
│ │ │ │ │ │ │
AS address latch │tLLEL │ See figures 4 and 5 │ 9,10,11 │ 44 │ │ 5 │ ns
control setup to │ │ │ │ │ │ │
start of write │ │ │M,D,P,L,R,F, │ │ │ │ │
│ │ │ G,H │ 9 │ 3/ │ │ 4/ │ ns
│ │ │ │ 2/ │ │ │ │
│ │ │ │ │ │ │ │
│ │ │ │ │ │ │
AS address latch │tEHLL │ │ 9,10,11 │ 44 │ 5 │ │ ns
control hold after │ │ │ │ │ │ │
end of write │ │ │M,D,P,L,R,F, │ │ │ │ │
│ │ │ G,H │ 9 │ 3/ │ 4/ │ │ ns
│ │ │ │ 2/ │ │ │ │
│ │ │ │ │ │ │ │
│ │ │ │ │ │ │
Address setup to │tAVLH │ │ 9,10,11 │ 44,45 │ 15 │ │ ns
address latch │ │ │ │ │ │ │
│ │ │M,D,P,L,R,F, │ │ │ │ │
│ │ │ G,H │ 9 │ 3/ │ 4/ │ │ ns
│ │ │ │ 2/ │ │ │ │
│ │ │ │ │ │ │ │
│ │ │ │ │ │ │
Address hold after │tLHAX │ │ 9,10,11 │ 44,45 │ 10 │ │ ns
address latch │ │ │ │ │ │ │
│ │ │M,D,P,L,R,F, │ │ │ │ │
│ │ │ G,H │ 9 │ 3/ │ 4/ │ │ ns
│ │ │ │ 2/ │ │ │ │
│ │ │ │ │ │ │ │
│ │ │ │ │ │ │
Address latch width │tLLLH │ │ 9,10,11 │ 44,45 │ 20 │ │ ns
│ │ │ │ │ │ │
│ │ │M,D,P,L,R,F, │ │ │ │ │
│ │ │ G,H │ 9 │ 3/ │ 4/ │ │ ns
│ │ │ │ 2/ │ │ │ │
│ │ │ │ │ │ │ │
│ │ │ │ │ │ │
Chip enable hold │tLHEL │ │ 9,10,11 │ 44 │ 0 │ │ ns
after address │ │ │M,D,P,L,R,F, │ 9 │ 3/ │4/ │ │
latch │ │ │ G,H │ 2/ │ │ │ │ ns
│ │ │ │ │ │ │ │
1/ AC measurements assume transition time ≤ 5 ns, input levels are from ground to 3.0 V, and output load CL ≥ 30 pF except
as noted on figure 5. Timing reference levels are 1.5 V. For devices 40, 41, and 43, input levels are VIL = 0.5 V, VIH =
V
CC - 0.5 V.
2/ When performing postirradiation electrical measurements for any RHA level TA = +25°C. Limits shown are guaranteed at T
A = +25°C ±5°C. The M, D, P, L, R, F, G, and H in the test condition column are the postirradiation limits for the device
types specified in the device types column.
3/ Devices listed in 1.2.2 herein, that are to be marked with an RHA marking shall apply to all RHA levels unless otherwise
specified.
4/ Preirradiation values for RHA marked devices shall also be the postirradiation values unless otherwise specified.
5/ Tested initially and after any design or process changes which may affect that parameter, and therefore shall be guaranteed
to the limits specified in table IA.
6/ Functional tests shall include the test table and other test patterns used for fault detection as approved by the qualifying
activity. Outputs are measured at VOL < 1.5 V, VOH > 1.5 V. For devices 40, 41, and 43, outputs are measured at VOL < V
CC / 2, VOH > VCC / 2.
7/ This parameter measured ±500 mV from steady-state VOL or VOH.