1
Subject to change without notice.
www.cree.com/rf
CGHV35150
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specically with high efciency, high gain and wide bandwidth capabilities,
which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplier
applications. The transistor is supplied in a ceramic/metal ange and pill package.
Typical Performance 3.1 - 3.5 GHz (TC = 85˚C)
Parameter 3.1 GHz 3.2 GHz 3.3 GHz 3.4 GHz 3.5 GHz Units
Output Power 180 180 180 170 150 dB
Gain 13.5 13.5 13.5 13.3 12.7 dBc
Drain Efciency 50 49 50 49 48 %
Note: Measured in the CGHV35150-AMP application circuit, under 300 µs pulse width, 20% duty cycle, PIN = 39 dBm
Features:
• Rated Power = 150 W @ TCASE = 85°C
• Operating Frequency = 2.9 - 3.5 GHz
• Transient 100 µsec - 300 µsec @ 20% Duty Cycle
• 13.5 dB Power Gain @ TCASE = 85°C
• 50 % Typical Drain Efciency @ TCASE = 85°C
• Input Matched
• <0.3 dB Pulsed Amplitude Droop
Rev 1.0 – May 2015
Package Type: 440193 / 440206
PN: CGHV35150F / CGHV35150P
2CGHV35150 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous)
Parameter Symbol Rating Units Conditions
Pulse Width PW 300 µs
Duty Cycle DC 20 %
Drain-Source Voltage VDSS 125 Volts 25˚C
Gate-to-Source Voltage VGS -10, +2 Volts 25˚C
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Forward Gate Current IGMAX 30 mA 25˚C
Maximum Drain Current1IDMAX 12 A 25˚C
Soldering Temperature2TS245 ˚C
Screw Torque τ40 in-oz
Pulsed Thermal Resistance, Junction to Case3RθJC 0.81 ˚C/W 300 µsec, 20%, 85˚C
Pulsed Thermal Resistance, Junction to Case4RθJC 0.86 ˚C/W 300 µsec, 20%, 85˚C
Case Operating Temperature TC-40, +150 ˚C 30 seconds
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV35150P at PDISS = 150 W
4 Measured for the CGHV35150F at PDISS = 150 W
Electrical Characteristics
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics1 (TC = 25˚C)
Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 28.8 mA
Gate Quiescent Voltage VGS(Q) –-2.7 – VDC VDS = 50 V, ID = 500 mA
Saturated Drain Current2IDS 21.6 25.9 –AVDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 28.8 mA
RF Characteristics3 (TC = 85˚C, F0 = 3.1 - 3.5 GHz unless otherwise noted)
Output Power at 3.1 GHz POUT 130 170 – WVDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
Output Power at 3.5 GHz POUT 100 135 – WVDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
Gain at 3.1 GHz GP12.0 13.3 –dB VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
Gain at 3.5 GHz GP11.0 12.3 –dB VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
Drain Efciency at 3.1 GHz DE40 47 – % VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
Drain Efciency at 3.5 GHz DE40 44 – % VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
Amplitude Droop D – -0.3 –dB VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
Output Mismatch Stress VSWR – – 5 : 1 YNo damage at all phase angles,
VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm Pulsed
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV35150-AMP. Pulse Width = 300 μS, Duty Cycle = 20%.
3CGHV35150 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance
Figure 1. - CGHV35150 Typical Sparameters
VDD = 50 V, IDQ = 500 mA, TCASE = 25°C
Figure 2. - CGHV35150 Typical RF Results
VDD = 50 V, IDQ = 500 mA, PIN = 39 dBm
Tplate = 85°C, Pulse Width = 300 µs, Duty Cycle = 20 %
5
10
15
20
Magnitude (dB)
CGHV35150 Sparameters
Vdd = 50 V, Idq = 500 mA
-15
-10
-5
0
2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
Magnitude (dB)
Frequency (GHz)
S21
S11
Drain Efciency
Output Power
Gain
100
120
140
160
180
200
Output Power (W), Gain (dB), and Drain Efficiency (%)
CGHV35150 RF Measurements vs Input Power
Vdd = 50 V, Idq = 500 mA, Tplate = 85 deg C, Pulse Width = 300 us, Duty Cycle
= 20 %
Output Power
Gain
Drain Efficiency
0
20
40
60
80
2.9 3.0 3.1 3.2 3.3 3.4 3.5
Output Power (W), Gain (dB), and Drain Efficiency (%)
Input Power (dBm)
Drain Efficiency
4CGHV35150 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance
Figure 3. - CGHV35150 Output Power vs Input Power
VDD = 50 V, IDQ = 500 mA, TPLATE = 85°C, Pulse Width = 300 µs, Duty Cycle = 20%
Figure 4. - CGHV35150 Gain and Drain Efciency vs Input Power
VDD = 50 V, IDQ = 500 mA, Tplate = 85°C, Pulse Width = 300 µs, Duty Cycle = 20 %
Electrostatic Discharge (ESD) Classications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C
Drain Efciency
Output Power
Gain
40
45
50
55
Output Power (dBm)
CGHV35150 RF Measurements vs Input Power
Vdd = 50 V, Idq = 500 mA, Tplate = 85 deg C, Pulse Width = 300 us, Duty Cycle
= 20 %
3.1 GHz
3.3 GHz
3.5 GHz
25
30
35
5 10 15 20 25 30 35 40 45
Output Power (dBm)
Input Power (dBm)
12
14
16
18
30
40
50
60
CGHV35150 RF Measurements vs Input Power
Vdd = 50 V, Idq = 500 mA, Tplate = 85 deg C, Pulse Width = 300 us, Duty Cycle
= 20 %
Drain Eff - 3.1 GHz
Drain Eff - 3.3 GHz
Drain Eff - 3.5 GHz
Gain - 3.1 GHz
Gain - 3.3 GHz
Gain - 3.5 GHz
6
8
10
0
10
20
5 10 15 20 25 30 35 40 45
Input Power (dBm)
5CGHV35150 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CGHV35150 Power Dissipation De-rating Curve
Figure 5. - CGHV35150 Transient Power Dissipation De-Rating Curve
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
CGHV35150-AMP Application Circuit Bill of Materials
Designator Description Qty
R1 RES, 511 OHM, +/- 1%, 1/16W, 0603 1
R2 RES, 5.1 OHM, +/- 1%, 1/16W, 0603 1
C1,C7,C8 CAP, 10pF, +/- 1%, 250V, 0805 3
C2 CAP, 6.8pF, +/- 0.25 pF,250V, 0603 1
C3 CAP, 10.0pF, +/-5%,250V, 0603 1
C4,C9 CAP, 470PF, 5%, 100V, 0603, X 2
C5,C10 CAP, 33000PF, 0805,100V, X7R 1
C6 CAP 10uF 16V TANTALUM 1
C11 CAP, 1.0UF, 100V, 10%, X7R, 1210 1
C12 CAP, 33 UF, 20%, G CASE 1
C13 CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC 1
J1,J2 CONN, SMA, PANEL MOUNT JACK, FL 2
J3 HEADER RT>PLZ .1CEN LK 9POS 1
J4 CONNECTOR ; SMB, Straight, JACK,SMD 1
W1 CABLE ,18 AWG, 4.2 1
PCB, RO4350, 20 MIL THK, CGHV35150 1
Q1 CGHV35150 1
60
80
100
120
140
Power Dissipation (W)
CGHV35150F Transient Power Dissipation De-Rating Curve
0
20
40
60
0 25 50 75 100 125 150 175 200 225 250
Power Dissipation (W)
Maximum Case Temperature (
°
C)
Flange
Pill
Note 1
6CGHV35150 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CGHV35150-AMP Application Circuit Outline
CGHV35150-AMP Application Circuit Schematic
7CGHV35150 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Product Dimensions CGHV35150F (Package Type — 440193)
Product Dimensions CGHV35150P (Package Type — 440206)
8CGHV35150 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Part Number System
Parameter Value Units
Upper Frequency13.5 GHz
Power Output 150 W
Package Flange -
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code Code Value
A0
B1
C2
D 3
E 4
F5
G6
H 7
J 8
K 9
Examples: 1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Flanged or Pill
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
CGHV35150F/P
9CGHV35150 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Product Ordering Information
Order Number Description Unit of Measure Image
CGHV35150F GaN HEMT Each
CGHV35150P GaN HEMT Each
CGHV35150-TB Test board without GaN HEMT Each
CGHV35150F-AMP Test board with GaN HEMT installed Each
10 CGHV35150 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Disclaimer
Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639