This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Unit: mm 10.00.2 Rating Unit VCBO 60 V 2SD1266A Collector-emitter voltage 2SD1266 (Base open) 2SD1266A Emitter-base voltage (Collector open) 80 VCEO VEBO IC Peak collector current ICP TC = 25C V PC 6 V 3 A 5 A 35 W 7.50.2 4.20.2 1.30.2 1.40.1 0.5+0.2 -0.1 0.80.1 2.540.3 80 Collector current Collector power dissipation 60 14.00.5 2SD1266 3.10.1 Solder Dip (4.0) Collector-base voltage (Emitter open) Symbol 2.70.2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Parameter 16.70.3 Absolute Maximum Ratings Ta = 25C 4.20.2 5.50.2 M Di ain sc te on na tin nc ue e/ d * High forward current transfer ratio hFE which has satisfactory linearity * Low collector-emitter saturation voltage VCE(sat) * Full-pack package which can be installed to the heat sink with one screw 0.70.1 Features 5.080.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 2.0 Junction temperature Tj Storage temperature Tstg 150 C -55 to +150 C Electrical Characteristics Ta = 25C 3C Symbol Base-emitter voltage Collector-emitter cutoff current (E-B short) 2SD1266A 2SD1266 2SD1266 en int Ma Forward current transfer ratio Collector-emitter saturation voltage Typ Max 60 Unit V 80 VCE = 4 V, IC = 3 A 1.8 V ICES VCE = 60 V, VBE = 0 200 A VCE = 80 V, VBE = 0 200 VCE = 30 V, IB = 0 300 VCE = 60 V, IB = 0 300 ICEO 2SD1266A Emitter-base cutoff current (Collector open) Min VBE 2SD1266A an Collector-emitter cutoff current (Base open) VCEO ce /D isc on tin Collector-emitter voltage (Base open) Conditions IC = 30 mA, IB = 0 2SD1266 ue Parameter IEBO VEB = 6 V, IC = 0 hFE1 * VCE = 4 V, IC = 1 A 70 hFE2 VCE = 4 V, IC = 3 A 10 VCE(sat) IC = 3 A, IB = 0.375 A A 1 mA 320 1.2 V Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC = 1 A, IB1 = 0.1 A, IB2 = - 0.1 mA 0.5 s Storage time tstg VCC = 50 V 2.5 s 0.4 s Fall time tf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P O hFE1 70 to 150 120 to 250 160 to 320 Publication date: April 2003 SJD00283BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1266, 2SD1266A PC Ta IC VCE TC = 25C (1) TC = Ta (2) With a 100 x 100 x 2 mm Al heat sink (3) With a 50 x 50 x 2 mm Al heat sink (4) Without heat sink (PC = 2 W) 4 30 25C IB = 100 mA Collector current IC (A) (1) Collector current IC (A) 40 VCE = 4 V 90 mA 80mA 70 mA 60 mA 50 mA 40 mA 3 6 TC = 100C 20 1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 80 120 0 160 8 10 0 12 1 -25C 0.1 1 10 25C -25C 10 1 0.01 Safe operation area VCE = 4 V TC = 100C 102 ce /D isc on tin Collector current IC (A) Forward current transfer ratio hFE 25C 0.1 1 IC int Ma ICP Thermal resistance Rth (C/W) en an Non repetitive pulse TC = 25C t = 1ms 10 ms 1 DC 0.01 1 10 2SD1266A 2SD1266 0.1 100 1000 1.2 1.6 2.0 VCE = 5 V f = 10 MHz TC = 25C 103 102 10 Collector current IC (A) 0.1 1 10 Collector current IC (A) Rth t (1) Without heat sink (2) With a 100 x 100 x 2 mm Al heat sink 102 (1) (2) 10 1 10-1 10-2 10-4 10-3 10-2 10-1 1 Time t (s) Collector-emitter voltage VCE (V) SJD00283BED 2.4 fT I C 1 0.01 10 103 10 0.8 104 103 ue TC = 100C 100 0.4 Base-emitter voltage VBE (V) hFE IC 10 0.1 6 104 IC/IB = 8 0.01 0.01 4 Collector-emitter voltage VCE (V) VCE(sat) IC 100 2 Transition frequency fT (MHz) 40 Ambient temperature Ta (C) Collector-emitter saturation voltage VCE(sat) (V) 0 0 0 2 2 10 mA (3) (4) 0 Collector current IC (A) 20 mA (2) 10 30 mA 2 -25C 4 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (W) IC VBE 8 5 50 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. 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