SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE *Complementary to MPS8550. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V IC 1.5 A Collector Current 625 *PC Collector Power Dissipation mW 400 Junction Temperature Storage Temperature Range Tj 150 Tstg -55150 *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=35V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=100A, IE=0 40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=2mA, IB=0 25 - - V VCE=1V, IC=5mA 45 135 - hFE(2) (Note) VCE=1V, IC=100mA 85 160 300 hFE(3) VCE=1V, IC=800mA 40 110 - Collector-Emitter Saturation Voltage VCE(sat) IC=800mA, IB=80mA - 0.28 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=800mA, IB=80mA - 0.98 1.2 V hFE(1) DC Current Gain Base-Emitter Voltage VBE VCE=1V, IC=10mA - 0.66 1.0 V Transition Frequency fT VCE=10V, IC=50mA 100 190 - MHz - 9 - pF Collector Output Capacitance Note : hFE(2) Classification 2013. 7. 08 Cob VCB=10V, f=1MHz, IE=0 B:85160 , C : 120200 , D : 160300 Revision No : 5 1/2 MPS8050 2013. 7. 08 Revision No : 5 2/2