PSMN038-100K,518 - NEXPERIA

PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

Rev. 02 — 25 November 2009 Product data sheet

1. Product profile

1.1 General description

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in

a plastic package using T renchMOS technology. This product is de signed and qualified for

use in computing, communications, consumer and industrial ap plications only.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Suitable for high frequency

applicat ion s du e to fast swit ch ing

characteristics

1.3 Applications

Computer motherboards

DC-to-DC convertors

Switched-mode power supplies

1.4 Quick reference data

Ta ble 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤150 °C - - 100 V

IDdrain current Tsp =80°C;

see Figure 1 and 3--6.3A

Ptot total power

dissipation Tsp =80°C;

see Figure 2 --3.5W

Dynamic characteristics

QGD gate-drain charge VGS =10V; I

D=6.3A;

VDS =50V; T

j=25°C;

see Figure 11

- 16 21.5 nC

Static characteristics

RDSon drain-source

on-state resistance VGS =10V; I

D=5.2A;

Tj=25°C;

see Figure 9 and 10

- 3338mΩ

PSMN038-100K_2

Product data sheet Rev. 02 — 25 November 2009 2 of 12

Nexperia PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

2. Pinning information

3. Ordering information

4. Limiting values

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1S source

SOT96-1 (SO8)

2S source

3S source

4G gate

5D drain

6D drain

7D drain

8D drain

bb076

Table 3. Ordering informa tion

Type number Package

Name Description Version

PSMN038-100K SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤150 °C - 100 V

VGS gate-source voltage -20 20 V

IDdrain current Tsp =80°C; see Figure 1 and 3-6.3A

IDM peak drain current Tsp =25°C; t

p≤10 µs; pulsed; see Figure 3 -50A

Ptot total power dissipation Tsp =80°C; see Figure 2 -3.5W

Tstg storage temperature -55 150 °C

Tjjunction temperature -55 150 °C

Source-drain diode

ISsource current Tsp =80°C - 3.1 A

ISM peak source current Tsp =25°C; t

p≤10 µs; pulsed - 50 A

PSMN038-100K_2

Product data sheet Rev. 02 — 25 November 2009 3 of 12

Nexperia PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

Fig 1. Normalized continuous drain current as a

function of solde r point temperature Fig 2. Normalized total power dissipation as a

function of solder point temperature

Fig 3. Safe operating area; continuous and peak drain curren ts as a function of drain-source voltage

Tsp (°C)

0 20015050 100

03aa25

120

Ider

(%)

Tsp (°C)

0 20015050 100

03aa17

120

Pder

(%)

03ad97

10−1

102

(A)

10−2

VDS (V)

10-1103

102

110

δ =D.C.

tp = 10 µs

100 µs

1 ms

10 ms

100 ms

RDSon = VDS/ID

PSMN038-100K_2

Product data sheet Rev. 02 — 25 November 2009 4 of 12

Nexperia PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistance from

junction to solder point mounted on a metal clad substrate;see

Figure 4 --20K/W

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

03ad96

10−1

102

Zth(j-sp)

(K/W)

10−2

tp (s)

10−4102

10110−310−1

10−2

δ = 0.5

0.2

single pulse

0.1

0.05

0.02

δ =

PSMN038-100K_2

Product data sheet Rev. 02 — 25 November 2009 5 of 12

Nexperia PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage ID=250µA; V

GS =0V; T

j= 25 °C 100 130 - V

VGS(th) gate-source threshold

voltage ID=1mA; V

DS= VGS; Tj=150°C;

see Figure 8 1.2 - - V

ID=1mA; V

DS= VGS; Tj=-55°C;

see Figure 8 --6V

ID=1mA; V

DS= VGS; Tj=25°C;

see Figure 8 2- 4V

IDSS drain leakage current VDS =100V; V

GS =0V; T

j=150°C --0.5mA

VDS =80V; V

GS =0V; T

j=25°C --1µA

IGSS gate leakage current VGS =20V; V

DS =0V; T

j= 25 °C - - 100 nA

VGS =-20V; V

DS =0V; T

j= 25 °C - - 100 nA

RDSon drain-source on-state

resistance VGS =10V; I

D=5.2A; T

j=150°C;

see Figure 9 and 10 -7688mΩ

VGS =10V; I

D=5.2A; T

j=25°C;

see Figure 9 and 10 -3338mΩ

Dynamic character istics

QG(tot) total gate charge ID=6.3A; V

DS =50V; V

GS =10V;

Tj=25°C; see Figure 11 -43-nC

QGS gate-source charge - 6.5 - nC

QGD gate-drain charge - 16 21.5 nC

Ciss input capacitance VDS =25V; V

GS = 0 V; f = 1 MHz;

Tj=25°C; see Figure 12 - 1740 - pF

Coss output capacitance - 220 - pF

Crss reverse transfer

capacitance - 135 - pF

td(on) turn-on delay time VDS =50V; R

L=50Ω; VGS =10V;

RG(ext) =6Ω; Tj=25°C; I

D=1A -1530ns

trrise time - 13 25 ns

td(off) turn-off delay time - 50 80 ns

tffall time - 25 40 ns

gfs transfer conductance VDS =15V; I

D= 6.3 A; see Figure 13 -20-S

Source-drain diode

VSD source-drain voltage IS= 2.3 A; VGS =0V; T

j=25°C;

see Figure 14 -0.71.1V

trr reverse recovery time IS= 6.3 A; dIS/dt = -100 A/µs; VGS =0V;

VDS =25V; T

j=25°C -85-ns

Qrrecovered charge - 0.3 - µC

PSMN038-100K_2

Product data sheet Rev. 02 — 25 November 2009 6 of 12

Nexperia PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values Fig 6. Transfer characteristics: drain current as a

function of gate-source vo ltage; typical values

Fig 7. Sub-threshold drain current as a function of

gate-source voltage Fig 8. Gate-source threshold voltage as a function of

junction temperature

03ad98

012345

VDS

(V)

(A)

5 V

4.5 V

7 V 6 V

VGS = 10 V

03ae00

02468

VGS

(V)

(A)

VDS

> ID

X RDSon

Tj = 150 °C25 °C

03aa35

VGS (V)

0642

10−4

10−5

10−2

10−3

10−1

(A)

10−6

min typ max

Tj (°C)

−60 180120060

03aa32

VGS(th)

(V)

max

typ

min

PSMN038-100K_2

Product data sheet Rev. 02 — 25 November 2009 7 of 12

Nexperia PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

Fig 9. Drain-source on-state resistance as a function

of drain current; typical values Fig 10. Normalized drain-source on-state resistance

factor as a functio n of junction temperature

Fig 11. Gate-source voltage as a function of gate

charge; typical values

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

03ad99

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.1

01020304050

(A)

DSon

(Ω)

Tj = 25 °C

= 6 V

7 V

10 V

4.5 V 5 V

03aa29

-60 0 60 120 180

Tj (°C)

03ae04

0153045

(nC)

VGS

(V)

ID = 6.3 A

Tj = 25 °C

VDD = 20 V 50 V 80 V

03ae03

102

103

104

10−1 1 10 102

VDS

(V)

iss

oss

rss

(pF)

Ciss

Coss

Crss

PSMN038-100K_2

Product data sheet Rev. 02 — 25 November 2009 8 of 12

Nexperia PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

Fig 13. Forward transconductance as a function of

drain current; typical values Fig 14. Source current as a function of source-drain

voltage; typical values

03ae01

0 1020304050

(A)

gfs

(S) Tj = 25 °C

150 °C

VDS

> ID

X RDSon

03ae02

0 0.4 0.8 1.2

VSD

(V)

(A)

Tj = 25 °C

150 °C

VGS = 0 V

PSMN038-100K_2

Product data sheet Rev. 02 — 25 November 2009 9 of 12

Nexperia PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

7. Package outline

Fig 15. Package outline SOT96-1 (SO8)

UNIT A

max. A1A2A3bpcD

(1) E(2) (1)

ELL

pQZywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

inches

1.75 0.25

0.10

1.45

1.25 0.25 0.49

0.36

0.25

0.19

5.0

4.8

4.0

3.8 1.27 6.2

5.8 1.05 0.7

0.6

0.7

0.3 8

0.25 0.10.25

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Notes

1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.

1.0

0.4

SOT96-1

detail X

vMA

(A )

pin 1 index

076E03 MS-012

0.069 0.010

0.004

0.057

0.049 0.01 0.019

0.014

0.0100

0.0075

0.20

0.19

0.16

0.15 0.05 0.244

0.228

0.028

0.024

0.028

0.012

0.010.010.041 0.004

0.039

0.016

0 2.5 5 mm

scale

O8: plastic small outline package; 8 leads; body width 3.9 mm SOT96

-1

99-12-27

03-02-18

PSMN038-100K_2

Product data sheet Rev. 02 — 25 November 2009 10 of 12

Nexperia PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

8. Revision history

Table 7. Revisio n history

Document ID Release date Data sheet status Change notice Supersedes

PSMN038-100K_2 20091125 Product data sheet - PSMN038-100K-01

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate .

PSMN038-100K-01 20010116 Product specification - -

PSMN038-100K_2

Product data sheet Rev. 02 — 25 November 2009 11 of 12

Nexperia PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions

Draft— The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data s heet— A short data sheet is an extract from a full dat a sheet with

the same product type number(s) and title. A short data sheet is intended for

quick reference only and sh ould not be re lied upon to co ntain detailed and full

information. For detailed and full information see the relevant full data sheet,

which is available on request via the local Nexperia sales office.

In case of any inconsistency or conflict with th e short data sheet, the full data

sheet shall prevail.

9.3 Disclaimers

General— Information in this document is believed to be accurate and

reliable. However, Nexperia does not give any representations or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes— Nexperia reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use— Nexperia products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia accepts no liability for inclusion and/or use of

Nexperia products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications— Applications that are described herein for any of th ese

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Quick reference data— The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Limiting values— Stress above one or more limiting values (as defined in

the Absolute Maximum Rati ngs System of I EC 60134) may cause perman ent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale— Nexperia products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nexperia.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by Nexperia. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Not hin g in this docume nt may b e int erp reted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control— This document as well as the item(s) described here in may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

9.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

10. Contact information

For more information, please visit:http://www.nexperia.com

For sales office addresses, please send an email to:salesaddresses@nexperia.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This documen t contains the product specification.

Nexperia PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

10 Contact information. . . . . . . . . . . . . . . . . . . . . .11

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release:

25 November 2009