HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Description * 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188. * Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . 210ns * Short Circuit Rating * Low Conduction Loss * Hyperfast Anti-Parallel Diode Ordering Information HGTP12N60C3D TO-220AB 12N60C3D The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. HGT1S12N60C3D TO-262AA 12N60C3D Formerly Developmental Type TA49182. HGT1S12N60C3DS TO-263AB 12N60C3D PART NUMBER PACKAGE BRAND NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263 variant in Tape and Reel, i.e., HGT1S12N60C3DS9A. Symbol C G E Packaging JEDEC TO-220AB JEDEC TO-262AA E E C G C G COLLECTOR (FLANGE) A COLLECTOR (FLANGE) JEDEC TO-263AB M COLLECTOR (FLANGE) A A G E HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,53 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 3-1 File Number 4261 HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS o Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC ALL TYPES 600 UNITS V 24 12 12 96 20 30 24A at 600V 104 0.83 -40 to 150 260 4 13 A A A A V V W W/oC oC oC s s NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 25. Electrical Specifications TC = 25oC, Unless Otherwise Specified LIMITS PARAMETER SYMBOL Collector-Emitter Breakdown Voltage BVCES Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage ICES VCE(SAT) TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES IC = IC110, VGE = 15V IC = 15A, VGE = 15V Gate-Emitter Threshold Voltage VGE(TH) IGES VGE = 20V Switching SOA SSOA TJ = 150oC, VGE = 15V, RG = 25, L = 100H Gate-Emitter Plateau Voltage VGEP Turn-On Energy EON Turn-Off Energy (Note 3) EOFF Diode Forward Voltage VEC V 250 A TC = 150oC - - 2.0 mA TC = 25oC TC = 150oC TC = 25oC TC = 150oC - 1.65 2.0 V - 1.85 2.2 V - 1.80 2.2 V - 2.0 2.4 V 3.0 5.0 6.0 V 100 nA - A VCE(PK) = 600V 24 - - A IC = IC110, VCE = 0.5 BVCES - 7.6 - V VGE = 15V - 48 55 nC VGE = 20V - 62 71 nC - 28 - ns - 20 - ns - 270 400 ns - 210 275 ns - 380 - J - 900 - J - 1.7 2.1 V TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25, L = 100H Note 3 tfi - - - td(ON)I Current Fall Time - - - Current Turn-On Delay Time td(OFF)I 600 - IC = IC110, VCE = 0.5 BVCES Current Turn-Off Delay Time UNITS 80 Qg(ON) tri MAX VCE(PK) = 480V On-State Gate Charge Current Rise Time TYP TC = 25oC IC = 250A, VCE = VGE Gate-Emitter Leakage Current MIN IEC = 12A 3-2 HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) LIMITS PARAMETER SYMBOL Diode Reverse Recovery Time trr Thermal Resistance RJC TEST CONDITIONS MIN TYP MAX UNITS IEC = 12A, dIEC/dt = 200A/s - 32 40 ns IEC = 1.0A, dIEC/dt = 200A/s - 23 30 ns IGBT - - 1.2 oC/W Diode - - 1.9 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending at the point where the collector current equals zero (ICE = 0A). This family of devices was tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include losses due to diode recovery. 80 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s 70 60 50 TC = 150oC 40 TC = 25oC 30 TC = -40oC 20 10 0 4 6 8 10 12 14 PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = 25oC 80 VGE = 15.0V 60 50 10.0V 40 30 9.0V 20 8.5V 8.0V 10 7.0V 0 0 2 80 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V 60 50 40 TC = -40oC TC = 150oC 20 TC = 25oC 10 0 0 1 2 3 4 6 8 10 FIGURE 2. SATURATION CHARACTERISTICS ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 1. TRANSFER CHARACTERISTICS 30 4 7.5V VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) 70 12.0V 70 5 80 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V 70 TC = -40oC 60 TC = 25oC 50 40 TC = 150oC 30 20 10 0 0 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3-3 HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS VGE = 15V 20 15 10 5 0 25 50 75 100 125 150 140 20 VCE = 360V, RGE = 25, TJ = 125oC 120 ISC 100 15 80 10 60 5 10 11 TC , CASE TEMPERATURE (oC) VGE = 10V 20 VGE = 15V TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 300 15 20 25 VGE = 15V VGE = 10V 200 100 10 10 30 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN ON DELAY TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN OFF DELAY TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 200 300 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 100 VGE = 10V tfi , FALL TIME (ns) tri , TURN ON RISE TIME (ns) 20 15 14 FIGURE 6. SHORT CIRCUIT WITHSTAND TIME td(OFF)I , TURN OFF DELAY TIME (ns) td(ON)I , TURN ON DELAY TIME (ns) 50 5 13 400 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 30 12 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE 100 40 tSC ISC, PEAK SHORT CIRCUIT CURRENT(A) ICE , DC COLLECTOR CURRENT (A) 25 (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (s) Typical Performance Curves VGE = 15V 10 200 VGE = 10V or 15V 100 90 5 5 10 15 20 25 80 30 ICE , COLLECTOR TO EMITTER CURRENT (A) 5 10 15 20 25 ICE , COLLECTOR EMITTER CURRENT (A) FIGURE 9. TURN ON RISE TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN OFF FALL TIME AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 3-4 30 HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS Typical Performance Curves (Continued) 3.0 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V EOFF , TURN OFF ENERGY LOSS (mJ) EON , TURN ON ENERGY LOSS (mJ) 2.0 1.5 VGE = 10V 1.0 VGE = 15V 0.5 0 5 10 15 20 25 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 2.5 2.0 1.5 VGE = 10V or 15V 1.0 0.5 0 30 5 fMAX , OPERATING FREQUENCY (kHz) TJ = 150oC, TC = 75oC RG = 25, L = 100H 100 VGE = 10V VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) 10 PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 1.2oC/W 1 5 10 20 30 100 60 LIMITED BY CIRCUIT 40 20 0 0 15 VGE, GATE TO EMITTER VOLTAGE (V) CIES C, CAPACITANCE (pF) 2000 1500 1000 500 COES 0 15 20 100 200 300 400 500 600 FIGURE 14. SWITCHING SAFE OPERATING AREA FREQUENCY = 1MHz 10 30 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V) 2500 5 25 80 FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 0 20 TJ = 150oC, VGE = 15V, RG = 25, L = 100H ICE, COLLECTOR TO EMITTER CURRENT (A) CRES 15 FIGURE 12. TURN OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN ON ENERGY LOSS AS A FUNCTION OF COLLECTOR TO EMITTER CURRENT 200 10 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) IG REF = 1.276mA, RL = 50, TC = 25oC 12 VCE = 600V 9 VCE = 400V 6 VCE = 200V 3 0 25 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 10 20 30 40 50 Qg , GATE CHARGE (nC) FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR TO EMITTER VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS 3-5 60 HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS Typical Performance Curves (Continued) DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 IEC , FORWARD CURRENT (A) ZJC , NORMALIZED THERMAL IMPEDANCE 50 100 t1 10-1 PD t2 10-2 10-5 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = (PD x ZJC x RJC) + TC 10-4 10-3 10-2 10-1 100 40 25oC 30 100oC 20 150oC 10 0 101 0 0.5 1.0 t1 , RECTANGULAR PULSE DURATION (s) 2.0 1.5 2.5 FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF FORWARD VOLTAGE DROP 35 TC = 25oC, dIEC/dt = 200A/s tR , RECOVERY TIMES (ns) 30 trr 25 tA 20 15 tB 10 5 0 0 5 10 15 20 IEC , FORWARD CURRENT (A) FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD CURRENT Test Circuit and Waveform HGTP12N60C3D 90% 10% VGE EOFF L = 100H EON VCE RG = 25 90% + - 3.0 VEC , FORWARD VOLTAGE (V) ICE VDD = 480V 10% td(OFF)I tfi tri td(ON)I FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS 3-6 HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS Operating Frequency Information Handling Precautions for IGBTs Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT's are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT's can be handled safely if the following basic precautions are taken: fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 21. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means, for example, with a metallic wristband. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener Diode from gate to emitter. If gate protection is required, an external Zener is recommended. ECCOSORBD is a Trademark of Emerson and Cumming, Inc. All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Office Headquarters For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS NORTH AMERICA Harris Semiconductor P. O. Box 883, Mail Stop 53-210 Melbourne, FL 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 S E M I C O N D U C TO R 3-7 ASIA Harris Semiconductor PTE Ltd. 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