SEMICONDUCTOR
3-1
HGTP12N60C3D,
HGT1S12N60C3D,
HGT1S12N60C3DS
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
Features
• 24A, 600V at TC = 25oC
• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . .210ns
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Description
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar transis-
tors. The device has the high input impedance of a MOSFET
and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moder-
ately between 25oC and 150oC. The IGBT used is the dev el-
opment type TA49123. The diode used in anti-parallel with
the IGBT is the development type TA49188.
The IGBT is ideal for many high voltage switching applica-
tions operating at moderate frequencies where low conduc-
tion losses are essential.
Formerly Developmental Type TA49182.
Symbol
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP12N60C3D TO-220AB 12N60C3D
HGT1S12N60C3D TO-262AA 12N60C3D
HGT1S12N60C3DS TO-263AB 12N60C3D
NO TE: When ordering, use the entire part number . Add the suffix 9A
to obtain the TO-263 variant in Tape and Reel, i.e.,
HGT1S12N60C3DS9A. C
E
G
Packaging
JEDEC TO-220AB JEDEC TO-262AA
JEDEC TO-263AB
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,53 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
ECG
COLLECTOR
(FLANGE)
A
COLLECTOR
(FLANGE)
G
EC
GE
A
A
M
COLLECTOR
(FLANGE)
January 1997
File Number 4261
3-2
o
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
ALL TYPES UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 24 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 12 A
Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I(AVG) 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 96 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . .SSOA 24A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD104 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL260 oC
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 4µs
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 13 µs
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RGE = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS
LIMITS
UNITSMIN TYP MAX
Collector-Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Collector-Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA
Collector-Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V TC = 25oC - 1.65 2.0 V
TC = 150oC - 1.85 2.2 V
IC = 15A, VGE = 15V TC = 25oC - 1.80 2.2 V
TC = 150oC - 2.0 2.4 V
Gate-Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = VGE 3.0 5.0 6.0 V
Gate-Emitter Leakage Current IGES VGE = ±20V - - ±100 nA
Switching SOA SSOA TJ = 150oC,
VGE = 15V,
RG = 25Ω,
L = 100µH
VCE(PK) = 480V 80 - - A
VCE(PK) = 600V 24 - - A
Gate-Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES - 7.6 - V
On-State Gate Charge Qg(ON) IC = IC110,
VCE = 0.5 BVCES VGE = 15V - 48 55 nC
VGE = 20V - 62 71 nC
Current Turn-On Delay Time td(ON)I TJ = 150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG= 25Ω,
L = 100µH
Note 3
-28-ns
Current Rise Time tri -20-ns
Current Turn-Off Delay Time td(OFF)I - 270 400 ns
Current Fall Time tfi- 210 275 ns
Turn-On Energy EON - 380 - µJ
Turn-Off Energy (Note 3) EOFF - 900 - µJ
Diode Forward Voltage VEC IEC = 12A - 1.7 2.1 V
HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS
3-3
Diode Reverse Recovery Time trr IEC = 12A, dIEC/dt = 200A/µs - 32 40 ns
IEC = 1.0A, dIEC/dt = 200A/µs - 23 30 ns
Thermal Resistance RθJC IGBT - - 1.2 oC/W
Diode - - 1.9 oC/W
NOTE:
3. Turn-Off Energy Loss (E OFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and
ending at the point where the collector current equals zero (ICE = 0A). This family of devices was tested per JEDEC Standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-
On losses include losses due to diode recovery.
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS
LIMITS
UNITSMIN TYP MAX
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE, GATE TO EMITTER VOLTAGE (V)
6 8 10 12
0
10
20
40
50
60
70
14
30
80
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VCE = 10V
4
TC = 150oC
TC = 25oC
TC = -40oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
00246810
10
20
30
12.0V
8.5V
9.0V
8.0V
7.5V
7.0V
VGE = 15.0V
40
50
60
70
80
10.0V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
30
012345
40
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
TC = 150oC
TC = 25oC
TC = -40oC
10
20
50
70
80
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
30
012345
V
CE, COLLECTOR TO EMITTER VOLTAGE (V)
TC = 25oC
TC = -40oC
TC = 150oC
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
10
20
40
50
60
70
80
HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS
3-4
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A FUNC-
TION OF CASE TEMPERATURE FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
FIGURE 7. TURN ON DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN OFF DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 9. TURN ON RISE TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN OFF FALL TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
Typical Performance Curves
(Continued)
25 50 75 100 125 150
0
5
10
15
20
25
ICE, DC COLLECTOR CURRENT (A)
TC, CASE TEMPERATURE (oC)
VGE = 15V
ISC, PEAK SHORT CIRCUIT CURRENT(A)
20
60
80
120
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12
VGE, GATE TO EMITTER VOLTAGE (V)
14 1513
140
100
40
ISC
tSC
5
10
15
20 VCE = 360V, RGE = 25Ω, TJ= 125oC
td(ON)I, TURN ON DELAY TIME (ns)
10
20
30
5101520
I
CE, COLLECTOR TO EMITTER CURRENT (A)
100
25 30
50
VGE = 10V
VGE = 15V
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN OFF DELAY TIME (ns)
400
300
200
1005 1015202530
T
J
= 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
VGE = 10V
VGE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
tri, TURN ON RISE TIME (ns)
5
10
100
5 1015202530
V
GE = 15V
VGE = 10V
200 TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
ICE, COLLECTOR EMITTER CURRENT (A)
tfi, FALL TIME (ns)
100
5 1015202530
200
300
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
VGE = 10V or 15V
90
80
HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS
3-5
FIGURE 11. TURN ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT FIGURE 12. TURN OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR
TO EMITTER VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS
Typical Performance Curves
(Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
05101520
E
ON, TURN ON ENERGY LOSS (mJ)
VGE = 15V
0.5
1.0
1.5
2.0
25 30
VGE = 10V
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN OFF ENERGY LOSS (mJ)
5 1015202530
0.5
1.0
1.5
2.0
2.5
3.0
0
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
VGE = 10V or 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
fMAX, OPERATING FREQUENCY (kHz)
5102030
10
100
200
1
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W
TJ = 150oC, TC = 75oC
RG = 25Ω, L = 100µH
VGE = 15V
VGE = 10V
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0 100 200 300 400 500 600
0
20
40
60
80
100 TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH
LIMITED BY
CIRCUIT
COES
CRES
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
500
1000
1500
2000
2500
C, CAPACITANCE (pF)
FREQUENCY = 1MHz
CIES
VGE, GATE TO EMITTER VOLTAGE (V)
Qg, GATE CHARGE (nC)
15
12
9
6
3
010 20 30 40 50 600
VCE = 200V VCE = 400V
VCE = 600V
IG REF = 1.276mA, RL = 50Ω, TC = 25oC
HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS
3-6
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF
FORWARD VOLTAGE DROP
FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD CURRENT
Test Circuit and Waveform
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS
Typical Performance Curves
(Continued)
t1, RECTANGULAR PULSE DURATION (s)
10-5 10-3 100101
10-4 10-1
10-2
100
ZθJC, NORMALIZED THERMAL
IMPEDANCE
10-1
10-2
t1
t2
PD
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = (PD x ZθJC x RθJC) + TC
0.5 1.0 1.5 2.5 3.0
IEC, FORWARD CURRENT (A)
VEC, FORWARD VOLTAGE (V)
0 2.0
10
0
20
30
40
50
25oC
100oC
150oC
30
20
10
0
tR, RECOVERY TIMES (ns)
IEC, FORWARD CURRENT (A)
510 20015
35
25
15
5
trr
tA
tB
TC = 25oC, dIEC/dt = 200A/µs
RG = 25Ω
L = 100µH
VDD = 480V
+
-
HGTP12N60C3D
tfi
td(OFF)I tri
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF EON
HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS
3-7
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harr is Semiconductor reserves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which ma y result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS
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TEL: (65) 748-4200
FAX: (65) 748-0400
SEMICONDUCTOR
Operating Frequency Information
Operating frequency inf ormation f or a typical device (Figure 13)
is presented as a guide for estimating device performance
f or a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the infor mation shown
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical de vice shows f MAX1 or
fMAX2 whichever is smaller at each point. The infor mation is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
fMAX1 is defined by f MAX1 = 0.05/(tD(OFF)I + t D(ON)I). Dead-
time (the denominator) has been arbitrarily held to 10% of
the on-state time for a 50% duty factor. Other definitions are
possible. tD(OFF)I and tD(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJMAX.
tD(OFF)I is important when controlling output ripple under a
lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJMAX -
T
C
)/RθJC. The sum of device switching and conduction
losses must not exceed PD. A 50% duty factor was used
(Figure 13) and the conduction losses (PC) are approxi-
mated by PC=(V
CE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the inte-
gral of the instantaneous power loss during turn-off. All tail
losses are included in the calculation for EOFF; i.e., the col-
lector current equals zero (ICE = 0).
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the de vice. With proper handling and application procedures ,
however, IGBT’s are currently being extensively used in pro-
duction by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no dam-
age problems due to electrostatic discharge. IGBT’s can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the inser tion into conductive material such
as “ECCOSORBD LD26” or equivalent.
2. When de vices are remov ed by hand from their carriers,
the hand being used should be grounded by any suitable
means, for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. De vices should ne ver be inserted into or removed from
circuits with power on.
5. Gate Volta ge Rating - Nev er exceed the gate-voltage rat-
ing of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate T ermination - The gates of these de vices are essen-
tially capacitors. Circuits that lea v e the gate open-circuited
or floating should be avoided. These conditions can result
in turn-on of the device due to v oltage b uildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These de vices do not hav e an internal
monolithic Zener Diode from gate to emitter. If gate pro-
tection is required, an external Zener is recommended.
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS
