Philips Components BLFI77 blue binder, tab 6 9397 191 10422 DEVELOPMENT DATA This data sheet contains advance information and specifications which are subject to change without notice. RF POWER MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor intended for use in professional transmitters in the HF and VHF range. The transistor has a 4-lead flange envelope with a ceramic cap (SOT-121). All leads are isolated from the flange. QUICK REFERENCE DATA RF performance at Tp, = 25 C in common-source class-AB circuit. Mode of f Vps Pr Gp Dr. eff. d3 operation (PEP) (2-tone) (MHz) (V) (W) (dB) (%) (dB) SSB 28 50 150 > 20 > 35 <~30 MECHANICAL DATA Dimensions in mm Pinning: oT 0,14 1 = drain [| 2 = source tT: ceramic 3 = gate = 4 = source 25,2 ti fo | 13 d max 18,42 max OS | x on metal e- 12,2 max _ i PT 1 2,54 Lijit fd 450} 4 I 405 75 Fig. 1 SOT-121. 4 max ' 7275334.6 Note: Protect gate-source input against static charge during transport or handling. PRODUCT SAFETY This device incorporates beryllium oxide (BeO), the dust of which is toxic. The device is entirely safe provided that the internal BeO disc is not damaged. (See also page 3). PHILIPS Vf vgs 1988BLF177 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134). Drain-source voltage Vps max. 110 V Gate-source voltage +V6s max. 20 V Drain current (DC) Ip max. 7A Total power dissipation Tmb = 25 9C Prot max. . 220 W Storage temperature range Tstg 65 to +150 OC Operating junction temperature Tj max, 200 C THERMAL RESISTANCE From junction to mounting base Rthj-mb = max. 0.8 K/W From mounting base to heatsink Rth mb-h max. 0.2 KW CHARACTERISTICS Tj = 25 OC unless otherwise specified Drain-source breakdown voltage Ip = 50 mA; Vgg = 0 BVpss min. 110 V. Drain-source leakage current Vps = 50 V; Ves =0 Ipss max. 2.5 mA Gate-source leakage current +V@s=20V; Vps=0 Iqss max. 1.0 uA Gate-threshold voltage Ip = 50 mA; Vps = 10 V VGS(th) 2104.5 V Forward transconductance min 45S Ip =5A; Vps=10V Gts typ. 625 Drain-source on-state resistance 1p =5A;Vgs=10V RDS(ON) _ typ. 0.2 2 On-state drain current Vos = 10V; Veg=10V Ipsx typ. 25 A Input capacitance at f= 1 MHz Vps = 50 V; Veg = 0 Cigs typ. 580 pF Output capacitance at f= 1 MHz Vps = 50 V; Veg = OV Coss typ. 185 pF Feedback capacitance at f = 1 MHz Vps = 50 V; Vgsg = 0 Crss typ. 14 pF 2 August | ( PH ILI PSRF power MOS transistor BLF177 DEVELOPMENT DATA APPLICATION INFORMATION RF performance in SSB operation (common-source class-AB circuit) at Th = 25 OC. Mode of f Vps PL Gp Dr. eff. d3 operation (PEP) (2-tone) (MHz) (V) (W) (dB) (%) (dB) SSB 28 50 150 > 20 > 35 <-30 Optimum load impedance : 5.2+j20 The device is tested with a 2-tone signal. The tones are of equal amplitude and separated by 1 kHz. The intermodulation products are measured with respect to the level of one tone. LOAD MISMATCH The device is capable of withstanding a load VSWR of 50, varied through all phases, at rated load power and supply voltage (Th = 25 C). PRODUCT SAFETY This device incorporates Beryllium Oxide, the dust of which is toxic. The device is entirely safe pro- vided that the BeO disc is not damaged. Care should be taken to ensure that all those who may handle, use or dispose of this device are aware of its nature and of the necessary safety precautions. In particular it should never be thrown out with general industrial or domestic waste. DISPOSAL SERVICE Devices requiring disposal may be returned to the Philips Components Service Department. They must be separately and securely packed and clearly identified. If any are damaged or broken they MUST NOT be sent through the post. In this case, advice is available from: THE SERVICE DEPARTMENT PHILIPS COMPONENTS LIMITED P.O. BOX 142 BEDDINGTON LANE CROYDON, CRO 4NA 5 pups \(==BLF177 A 1 DUT f., al c3 L3 Ls C14 output input 1 502 502 | C2 % c10 C11 C15 I ari c R5 c7 . YH tt R3 L5 cB ltK-Hs 7223075 +VG Vp Fig. 2 Test circuit at 28 MHz. C1 = C4=C13 = C14= 7 - 100 pF film dielectric trimmer (cat. no. 2222 809 07015) C2 = 56 pF multilayer ceramic chip capacitor* C3=C11 = 62 pF multilayer ceramic chip capacitor* C5 =C6 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 47104) C7 = 3x 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 47104) ca = 2.2 uF electrolytic capacitor, 100 V c9=C10 = 20 pF multilayer ceramic chip capacitor* C12 = 100 pF multilayer ceramic chip capacitor* C15 = 200 pF multilayer ceramic chip capacitor* L 1= 133 nH, 5 turns enamelled Cu-wire (0.7 mm), int. dia. = 6 mm, | = 5.6 mm L2 = L3 = 41.1 Q stripline (10 mm x 6 mm} L4 = 236 nH, 7 turns enamelled Cu-wire (1.5 mm), int. dia. = 8 mm, | = 14.5 mm L5 = Ferroxcube HF choke, grade 3B (cat. no. 4312 020 36642) L6 = 149 nH, 4 turns enamelled Cu-wire (2.2.mm), int. dia. = 9mm, | = 8.8 mm Ri = 10 Q metal film resistor (cat. no, 2322 153 51009) R2= 10 Q metal film resistor (cat. no. 2322 153 51009) R3 = 1 kQ metal film resistor (cat. no. 2322 151 71002) R4 = 1 MQ metal film resistor (cat. no. 2322 151 71005) R5 = 10 2 metal film resistor (cat. no. 2322 153 51009) Printed circuit board: double CU-clad, 1.6 mm PTFE fibre glass dielectric (ey = 2.2) * American Technical Ceramics type 100B or capacitor of same quality. sons ( PHILIPS