IN ORDER OF: (1)CATEGORY,(2)TYPE NO. 15. MISCELLANOUS TRANSISTORS 1 [CATEGORY DWG LINE TYPE U)STRUC- AlY200 EO DESCRIPTION No. No S| TURE T\ s/a AQ E TO200 |DE Ser. T# [BDXG4A765A 5 |P-N- $i 3 CD {Darlington;Pt TT7W:BVCBO 8OV;BVCEO 8OV:hFET/HFE2 2.5 max. 2# |BDX64B/65B 5 IP-N Si |TO3 Darlington;Pt 117W;BVCBO 100V:hFE1/hFE2 2.5 max. 3# |BDX66/67 _ 5 |P-N si_[To3 Darlington:Pt_150W:BVCBO GOV:BVCEO GOV:hFE1/hFE2 2.5 max __ _ oe 4# |BDX6GA/67A 5 |P-N Si ]TO3 Darlington;Pt TSOW;BVCBO BOV:BVCEO 8OV:hFET/hFE2 2.5 max S# |BDX66B/67B 5 |P-N Si |TO3 Dartington;Pt 150W;BVCBO 100V;BVCEO 100V:;hFE1/hFE2 2.5 max 6# |BFX79 5 |DPE Si |TO77 PA |BVBCO-80V;BVCEO-60V;Pt 600mW ft-1O0MchFE-100 at IC-5Q0mA. __ _ 7T# |BFX80 5 ODPL Si [TO77 PA |[BVBCO-60V:BVCEO-60V;Pt-5SO0OmW/ft-4O0Mc min;hFE-200 at IC--O1mA. 8# |BFX81 5 |DPE Si |TO77 PA |BVBCO-25V;BVCEO-20V;Pt-50O0mW/ft-350Mc min:hFE-30 min at IC-10mA. Q9# |FT5315 5 [N-PE Si_|R240 Darlington;Pt BOOmMW;BVCBO 250V;BVCEO 250V:hfe 500 min at IC 500mMA,VCE 2V_ _ 4 10 MD985 5/P/N-AN* [Si ]R131f |PA [VCB 40Vdc;VCEO 15Vdc;Pd 550mW; 4#T 200MHz min:ton 25ns typ;toff 75ns typ. 41 MD985F SIP/N-AN* |Si | X22 VCB 40Vdc;VCEO 15Vdc;Pd 350mW:fT 200MHz min:ton 25ns typ;toff 75ns typ. 112 |Mp986 S|E Si_|TO77__|PA_|VCBO-40V;VCEO-15V;Pc-500mWft-200Mc min;hFE-25 min, at [C-10mA. ; _ 13 MO986F SIE Si [X22 VCBO-40V;VCEO-15V:Pc-250mW:ft-200Mc min;hFE-25 min. at [C-10mA_ 14 MD6001 5 |N-PAN Si JR131f |PA |Pd 550mW:;VCB 60Vdc;VCEO 30Vdc;fT 200MHz min:Max tr 40,td 20,ts 280,tf 7Ons. 15 MO6001F 5 |N-PAN Si [X22 Pd 350mW:VCB 60Vdc;VCEO 30Vdc;fT_ 20Q0MHz min:Max tr 40,td 20,ts 280,tf 7Ons. _ 16 MD6002 5 [N-PAN Si TR131 [PA [Pd 550mW;VCB 60Vdc;VCEO 30Vdc;fT 200MHz min;Max tr 40,td 20,ts 280,tf 7Ons. 17 MD6002F 5 |N-PAN Si [X22 Pd 350mW;VCB 60Vdc:;VCEO 30Vdc;fT 2OO0MHz min;Max tr 40,td 20,ts 280,tf 70ns. 18 MD6003 5 IN-PAN Si |R13Z1f [PA iPad S5OmW:VCB SOVdc;VCEQ 30VdcfT 2Z0QMHz min,Cob 8.0pf max. _ 19 MD6003F 5 |N-PAN Si [X22 Pd 350mW;VCB 50Vdc;VCEO 30Vdc:fT 200MHz min;Cob 8.0pf max. 20 MD6100 5 |P-NAN Si |TO99 PA |Pt-600mW(both sides); VCEO-45V;hFE-100 at 100UA;5.0V. | 21 _|MD6100F _ 5 [P-NAN si |TO89__|PB_|PD(both sides)4QOmW max;VCEO 45V:hFE 100 at 100UA,5.0V. - 22 MD6900 5 [N-PAN Si [R131b [PA [Pd 600mW(Both):VCB 12Vdc:VCEO TOVdc;ICBO 1TOnAdc;hFE 40-200,1IC 1OmAdc,VCE 5Vdc. 23 |MD7021 5 |N-PAN Si |R131f [PA [Pd 550mW:VCB 50Vdce;VCEO 40Vdc;fT 200MHz min;ton 28 ns;toff 72ns. | 24 |MD7021F 5 |N-PAN si |X22 Pd 350mW:VCB 50Vdc:VCEO 40Vdc;fT_ 200MHz min:ton 28ns:toff 72ns. 25 MJE6040* 5 [N-P Si [BS B W/MJE6043;PT 75W:BVCBO G6GOV;BVCEO 6OV;hFE 1/2 1.0k min at IC 4.0A,VCE 4.0V 26 MJE6041* 5 |N-P Si [BS B W/MJE6044;PT 75W;BVCBO 80V;BVCEO B80V;hFE 1/2 1.0k min at IC 4.0A,VCE 4.0V 27 MJE6042* 5 [N-P Si (BS B W/MJE6045;PT 75W,BVCBO 100V;BVCEO 100V;hFE 1/2 1.0k min at IC 3.0A,VCE 4.0V _ _ 28% |PA6003 5 ]N-P-PE Si T0105 [A JBVCBO 25V min;Pt 360mMW;hFE 40 min;VCE(Sat}300mV max;ft 150MHz. 29% |PA6005 5 |NP Si |R110d [A W/PB6005;PT 360mW;BVCBO 25V minjCBO 500nA max:hFE 100 min;Cob-12pF max 30# |PA6015 5 |N-P-PE Si_|R222 [F |W/PB6015;PT 500mW:BVCBO_25V min;ICBO_500nA max:hFE 60 min:Cob 12pF max _ 31# [PA6015A 5 [NPE Si [R222 F W/PB6015A;PT 500mW;BVCBO 25V minJCBO 500nA maxshFE 120 min;Cob 12pF max 32% |PA6015B 5 |NPE Si [R222 F W/PB6015B;PT 500mW;BVCBO 25V min;ICBO 500nA max:hFE 200 min;Cob 12pF max 33# |PAM6003 5 |N-P-PE $i |R216g JA BYVCBO 25V min:;Pt BOOmW;hFE 40 min; NCE(Sat}300mV max;ft_ 15OMHz. 34# [PB6003 5 [N-P-PE Si ]TO105 JA BVCBO 25V min;Pt 360mW;hFE 40 min; VCE(Sat)300mV max:ft 150MHz. 35# |PB6005 5 |PPE Si |R110d |A W/PAGOO5;PT 360mW:BVCBO 25V min;ICBOQ 500nA max;hFE 100 min;Cob 12pF max 36# |PB6015 __ 5 |N-P-PE Si_|R222 F W/PA6015;PT 500mW:BVCBO 25V_ min;ICBOQ 500nA max;hFE 60 min; Cob 12pF max __ ee 37# |PB6015A 5 [PPE Si JR222 F W/PA60TSA:;PT 500mW:BVCBO 25V min;ICBO 500nA max;hFE 120 min:Cob 72pF max 38% |P36015B 5 |PPE Si |R222 F W/PA6015B;PT S5