FDN360P Single P-Channel PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. * * Low gate charge (5nC typical). These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. * Fast switching speed. * High performance trench technology for extremely low RDS(ON). Applications * High power and current handling capability. * * * -2 A, -30 V. RDS(on) = 0.080 @ VGS = -10 V RDS(on) = 0.125 @ VGS = -4.5 V. DC/DC converter Load switch Motor drives D D S TM SuperSOT -3 Absolute Maximum Ratings Symbol S G G TA = 25C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage V ID Drain Current 20 -2 - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation TJ, Tstg A -20 (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range W -55 to +150 C C/W C/W Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient (Note 1a) 250 Thermal Resistance, Junction-to-Case (Note 1) 75 Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity 360 FDN360P 7'' 8mm 3000 units 1999 Fairchild Semiconductor Corporation FDN360P Rev. D FDN360P February 1999 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage BVDSS TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse IGSSR On Characteristics VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -24 V, VGS = 0 V -30 V mV/C 20 VGS = 20 V, VDS = 0 V 100 A nA VGS = -20 V, VDS = 0 V -100 nA -1 (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current ID = -250 A, Referenced to 25C VGS = -10 V, ID = -2 A VGS = -10 V, ID = -2 A, TJ=125C VGS = -4.5 V, ID = -1.5 A VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -2 A 5.5 VDS = -15 V, VGS = 0 V, f = 1.0 MHz 420 pF 140 pF 60 pF -1 -1.8 -3 0.060 0.080 0.095 V mV/C -4 0.080 0.136 0.125 -20 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 td(off) Turn-Off Delay Time 18 29 ns tf Turn-Off Fall Time 6 12 ns Qg Total Gate Charge 5 7 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -15 V, ID = -2 A, VGS = -10 V, 9 18 ns 8 16 ns 1.7 nC 1.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note 2) -0.75 -0.42 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 250C/W when mounted on a 0.02 in2 Pad of 2 oz. Cu. b) 270C/W when mounted on a 0.001 in2 pad of 2 oz. Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDN360P Rev. D FDN360P Electrical Characteristics FDN360P Typical Characteristics 20 2.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS= -10V -6.0V -5.0V 16 -4.5V 12 -4.0V 8 -3.5V 4 -3.0V 2 VGS= -4.0V -4.5V -5.0V 1.5 -6.0V -7.0V 1 -10V 0.5 0 0 1 2 3 4 0 5 4 8 Figure 1. On-Region Characteristics. 20 0.25 ID= -2.0A VGS= -10V 1.2 1.1 1 0.9 0.8 -50 16 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), ON RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 12 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) -25 0 25 50 75 100 125 ID= -1.0A 0.2 0.15 0.1 o TJ=125 C o 25 C 0.05 0 150 2 3 4 5 6 7 8 9 10 o TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 -ID, DRAIN CURRENT (A) -IS, REVERSE DRAIN CURRENT (A) 100 VDS= -5V o TJ=-55 C 8 o 25 C o 125 C 6 4 2 0 VGS= 0V 10 1 o TJ=125 C o 25 C 0.1 o -55 C 0.01 0.001 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN360P Rev. D (continued) 600 10 f=1MHz VGS= 0V ID= -2.0A 480 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDN360P Typical Characteristics VDS= -5.0V -10V 6 -15V 4 Ciss 360 240 2 120 0 0 Coss Crss 0 2 4 6 8 0 10 6 12 18 24 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 50 100 SINGLE PULSE POWER (W) 1ms 1 1s VGS= -10V SINGLE PULSE 0.1 RJA=270 C/W o TA=25 C 10ms 100ms 30 20 10s DC 10 o RJC=270 C/W o TA=25 C 0.01 0 0.1 1 10 100 0.0001 0.001 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) o 10 40 100s RDS(ON) Limit 0.5 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.2 R JA (t) = r(t) * RJA R JA = 270 C/W 0.1 0.05 0.02 0.01 P(pk) t1 Single Pulse 0.005 0.002 0.001 0.0001 t2 TJ - TA = P * RJA (t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDN360P Rev. D SuperSOTTM-3 Tape and Reel Data and Package Dimensions SSOT-3 Packaging Configuration: Figure 1.0 Customize Label Antistatic Cover Tape Conductive Embossed Carrier Tape Human Readable Label 3P 3P 3P 3P SSOT-3 Std Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Standard (no flow code) TNR 3,000 7" Dia D87Z Pin 1 SSOT-3 Std Unit Orientation TNR 10,000 13" 187x107x183 343x343x64 Max qty per Box 9,000 20,000 Weight per unit (gm) 0.0097 0.0097 Weight per Reel (kg) 0.1230 0.4150 343mm x 342mm x 64mm Intermediate box for D87Z Option Human Readable Label Note/Comments Human Readable Label sample Human Readable Label 187mm x 107mm x 183mm Intermediate Box for Standard Option SSOT-23 Tape Leader and Trailer Configuration: Figure 2.0 Carrier Tape Cover Tape Trailer Tape 160mm minimum Components Leader Tape 390mm minimum December 1998, Rev. B SuperSOTTM-3 Tape and Reel Data and Package Dimensions, continued SSOT-3 Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SSOT-3 (8mm) 3.15 +/-0.10 2.77 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.00 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.30 +/-0.10 0.228 +/-0.013 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 0.06 +/-02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 5.2 +/-0.3 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SSOT-3 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 8mm 7" Dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10.9 8mm 13" Dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10.9 December 1998, Rev. B SuperSOTTM-3 Tape and Reel Data and Package Dimensions, continued SuperSOT-3 (FS PKG Code 32) 1:1 Scale 1:1 on letter size paper Di mensions shown below are in: inches [mil limeters] Part Weight per unit (gram): 0.0097 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.