July 2007 Rev 5 1/10
10
BD243C
BD244C
Complementary power transistors
Features
Complementary NPN-PNP devices
Applications
Power linear and switching
Description
The device is manufactured in Planar technology
with “Base Island” layout. The resulting transistor
shows exceptional high gain performance
coupled with very low saturation voltage. The
PNP type is BD244C.
.
Figure 1. Internal schematic diagram
12
3
TO-220
www.st.com
Table 1. Device summary
Order code Marking Package Packaging
BD243C
BD244C
BD243C
BD244C TO-220 Tube
Absolute maximum ratings BD243C BD244C
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1 Absolute maximum ratings
Note: For PNP types voltage and current values are negative
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
BD243C (NPN) BD244C (PNP)
VCBO Collector-base voltage (IE = 0) 100 V
VCEO Collector-emitter voltage (IB = 0) 100 V
VEBO Emitte-base voltage (IC = 0) 5 V
ICCollector current 6 A
ICM Collector peak current (tP < 5ms) 10 A
IBBase current 2 A
PTOT Total dissipation at Tc = 25°C 65 W
Tstg Storage temperature -65 to 150 °C
TJMax. operating junction temperature 150 °C
BD243C BD244C Electrical characteristics
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2 Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Note: For PNP types voltage and current values are negative.
Table 3. Electrical characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0) VCE = 100V 0.4 mA
ICEO
Collector cut-off current
(IB = 0) VCE = 60V 0.7 mA
IEBO
Emitter cut-off current
(IC = 0) VEB = 5V 1mA
VCEO(sus)(1)
1. Pulsed duration = 300 ms, duty cycle 2%.
Collector-emitter
sustaining voltage (IB = 0) IC = 30mA 100 V
VCE(sat)(1) Collector-emitter
saturation voltage IC = 6A __ IB = 1A 1.5 V
VBE(1) Base-emitter voltage IC = 6A _____ IB = 1A 2V
hFE(1) DC current gain IC = 0.3mA__ VCE = 4V
IC = 3A _____ VCE = 4V
30
15
Electrical characteristics BD243C BD244C
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2.1 Typical characteristics
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. DC current gain (NPN) Figure 5. DC current gain (PNP)
Figure 6. Collector-emitter saturation
voltage (NPN)
Figure 7. Collector-emitter saturation
voltage (PNP)
BD243C BD244C Electrical characteristics
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Figure 8. Base-emitter saturation
voltage (NPN)
Figure 9. Base-emitter saturation
voltage (PNP)
Figure 10. Base-emitter saturation
voltage (NPN)
Figure 11. Base-emitter saturation
voltage (PNP)
Figure 12. BT(ON) time (NPN) Figure 13. BT(ON) time (PNP)
Electrical characteristics BD243C BD244C
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Figure 14. Resistive load switching time
(NPN)
Figure 15. Resistive load switching time
(PNP)
Figure 16. Resistive load switching time
(NPN)
Figure 17. Resistive load switching time
(PNP)
Figure 18. Collector-base and collector-
emitter capacitance (NPN)
Figure 19. Collector-base and collector-
emitter capacitance (PNP)
BD243C BD244C Package mechanical data
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3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in
ECOPACK® packages. These packages have a Lead-free second level
interconnect . The category of second level interconnect is marked on the
package and on the inner box label, in compliance with JEDEC Standard JESD97.
The maximum ratings related to soldering conditions are also marked on the inner
box label. ECOPACK is an ST trademark. ECOPACK specifications are available
at: www.st.com
Package mechanical data BD243C BD244C
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DIM.
mm.
MIN. TYP MAX.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.49 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
TO-220 Mechanical data
BD243C BD244C Revision history
9/10
4 Revision history
Table 4. Revision history
Date Revision Changes
13-Sep-2005 4 New datasheet according to MLD-PWR/05/1267
25-Jul-2007 5 Figures 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18 and
figure 19, added
BD243C BD244C
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