Semiconductor Components Industries, LLC, 2000
October, 2000 – Rev. 1 1Publication Order Number:
MUR8100E/D
MUR8100E, MUR880E
MUR8100E is a Preferred Device
SWITCHMODE
Power Rectifiers
Ultrafast “E’’ Series with High Reverse
Energy Capability
. . . designed for use in switching power supplies, inverters and as
free wheeling diodes, these state–of–the–art devices have the
following features:
20 mjoules Avalanche Energy Guaranteed
Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
Ultrafast 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Popular TO–220 Package
Epoxy Meets UL94, VO @ 1/8
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 1000 Volts
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 50 units per plastic tube
Marking: U880E, U8100E
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MUR880E
MUR8100E
VRRM
VRWM
VR800
1000
V
Average Rectified Forward Current
(Rated VR, TC = 150°C)
Total Device
IF(AV) 8.0 A
Peak Repetitive Forward Current
(Rated VR, Square W ave,
20 kHz, TC = 150°C)
IFM 16 A
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM 100 A
Operating Junction and Storage
Temperature Range TJ, Tstg –65 to +175 °C
Device Package Shipping
ORDERING INFORMATION
MUR8100E TO–220
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TO–220AC
CASE 221B
PLASTIC
50 Units/Rail
3
4
1
ULTRAFAST RECTIFIERS
8.0 AMPERES
800–1000 VOLTS
MARKING DIAGRAM
U8x0E
U8x0E = Device Code
x = 8 or 10
MUR880E TO–220 50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
1
3
4
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction to Case RθJC 2.0 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol MUR880E MUR8100E Unit
Maximum Instantaneous Forward Voltage (Note 1.)
(iF = 8.0 Amps, TC = 150°C)
(iF = 8.0 Amps, TC = 25°C)
vF1.5
1.8
Volts
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, TC = 100°C)
(Rated dc Voltage, TC = 25°C)
iR500
25
µA
Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amps/µs)
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)
trr 100
75
ns
Controlled Avalanche Energy
(See Test Circuit in Figure 6. ) WAVAL 20 mJ
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
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3
* The curves shown are typical for the highest voltage device in the voltage
* grouping. Typical reverse current for lower voltage selections can be
* estimated from these same curves if VR is sufficiently below rated VR.
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
Figure 3. Current Derating, Case
Figure 4. Current Derating, Ambient Figure 5. Power Dissipation
1.80.4
vF, INSTANTANEOUS VOLTAGE (VOLTS)
100
50
5.0
10
3.0
VR, REVERSE VOLTAGE (VOLTS)
0
10
0.1
0.01
TC, CASE TEMPERATURE (°C)
150140
10
3.0
2.0
1.0
0
20 600
TA, AMBIENT TEMPERATURE (°C)
8.0
6.0
4.0
2.0
0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
1.00
14
10
8.0
2.0
0
4.040
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
I
0.7
0.5
1.20.8 1.0 1.4 1.6
200 400 600 800 1000
1.0
100
10,000
170 180
, AVERAGE FORWARD CURRENT (AMPS)IF(AV)
80 120100
10
2.0 3.0 5.0
6.0
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
2.0
20
0.1
0.3
7.0
1.0
30
, REVERSE CURRENT ( A)
R
160
140 160 200180
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
6.0
5.0
4.0
9.0
8.0
7.0
6.0 9.07.0 8.0 10
7.0
5.0
3.0
1.0
9.0 TJ = 175°C
SQUARE WAVE
dc
RATED VR APPLIED
SQUARE WAVE
dc
TJ = 25°C
100°C
150°C
TJ = 175°C
25°C
100°C
70
0.2
1000
4.0
12
RJA = 16°C/W
RJA = 60°C/W
(No Heat Sink)
SQUARE WAVE
dc
SQUARE WAVE
dc
0.6
175°C
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4
t0t1t2t
VDD
ID
IL
BVDUT
MERCURY
SWITCH
Figure 6. Test Circuit Figure 7. Current–Voltage Waveforms
+VDD
DUT
40 H COIL
VD
IL
S1
ID
The unclamped inductive switching circuit shown in
Figure 6. was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S 1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly , due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal t o the ener gy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed b y the supply during breakdown is small and the
total ener gy can be assumed to be nearly equal to the ener gy
stored in the coil during the time when S1 was closed,
Equation (2).
The oscilloscope picture in Figure 8. , shows the
MUR8100E in this test circuit conducting a peak current of
one ampere at a breakdown voltage of 1300 volts, and using
Equation (2) the energy absorbed by the MUR8100E is
approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
WAVAL 1
2LI2
LPKBVDUT
BVDUT–VDD
WAVAL 1
2LI2
LPK
Figure 8. Current–Voltage Waveforms
CHANNEL 2:
IL
0.5 AMPS/DIV.
CHANNEL 1:
VDUT
500 VOLTS/DIV.
TIME BASE:
20 s/DIV.
EQUATION (1):
EQUATION (2):
CH1 CH2 REF REF
CH1
CH2
ACQUISITIONS
SAVEREF SOURCE
1 217:33 HRS
STACK
A20s 953 V VERT500V
50mV
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5
t, TIME (ms)
1001.0
0.5
0.07
0.05
0.01
VR, REVERSE VOLTAGE (VOLTS)
101.0
1000
300
100
30
10
C, CAPACITANCE (pF)
2.0 5.0 10 20 50
0.3
0.7
1.0
100
r(t), TRANSIENT THERMAL RESISTANCE
0.2
0.1
0.03
0.02
0.01 0.02 0.05 0.1 0.2 0.5 200 500 1000
TJ = 25°C
(NORMALIZED)
Figure 9. Thermal Response
Figure 10. Typical Capacitance
D = 0.5
0.1
0.05
0.01
SINGLE PULSE
ZθJC(t) = r(t) RθJC
RθJC = 1.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
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6
PACKAGE DIMENSIONS
TO–220 TWO–LEAD
CASE 221B–04
ISSUE D
B
R
J
D
G
L
H
QT
U
A
K
C
S
4
13
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.595 0.620 15.11 15.75
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.82
D0.025 0.035 0.64 0.89
F0.142 0.147 3.61 3.73
G0.190 0.210 4.83 5.33
H0.110 0.130 2.79 3.30
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.14 1.52
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.14 1.39
T0.235 0.255 5.97 6.48
U0.000 0.050 0.000 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
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7
Notes
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8
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MUR8100E/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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