Order this document by BD237/D SEMICONDUCTOR TECHNICAL DATA IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIII IIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII x x 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. * DC Current Gain -- hFE = 40 (Min) @ IC = 0.15 Adc MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 2.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25_C PD 25 Watts TJ, Tstg - 55 to + 150 _C Symbol Max Unit JC 5.0 _C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case CASE 77-08 TO-225AA TYPE ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 80 -- Vdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO -- 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO -- 1.0 mAdc hFE1 hFE2 40 25 -- -- Collector-Emitter Saturation Voltage* (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) -- 0.6 Vdc Base-Emitter On Voltage* (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) -- 1.3 Vdc fT 3.0 -- MHz Collector-Emitter Sustaining Voltage* (IC = 0.1 Adc, IB = 0) DC Current Gain (IC = 0.15 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) Current-Gain -- Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 BD237 IC, COLLECTOR CURRENT (AMP) 10 100 s 1 ms 3 The Safe Operating Area Curves indicate IC - VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power-temperature derating must be observed for both steady state and pulse power conditions. 5 ms TJ = 150C 1 dc 0.3 BD236 BD237 3 10 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.1 1 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active Region Safe Operating Area 1.0 0.8 IC = 0.1 A 0.25 A 0.5 A 1.0 A 0.6 TJ = 25C 0.4 0.2 0 0.2 0.3 1.0 0.5 2.0 3.0 10 5.0 IB, BASE CURRENT (mA) 30 20 50 200 100 1.5 VCE = 2.0 V 1.2 TJ = 25C 300 VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) Figure 2. Collector Saturation Region 1000 700 500 200 TJ = + 150C 100 70 50 TJ = + 25C 30 20 TJ = + 55C 10 2.0 3.0 5.0 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 VCE(sat) @ IC/IB = 10 10 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA) 0 2.0 3.0 5.0 10 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 3. Current Gain 1.0 0.7 0.5 D = 0.5 0.3 D = 0.2 0.2 D = 0.1 0.1 0.07 0.05 D = 0.05 Figure 4. "On" Voltages SINGLE PULSE D = 0.01 JC(t) = r(t) JC JC = 4.16C/W MAX JC = 3.5C/W TYP P(pk) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.03 0.02 0.01 0.01 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA) 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME or PULSE WIDTH (ms) 20 30 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 Figure 5. Thermal Response 2 Motorola Bipolar Power Transistor Device Data BD237 PACKAGE DIMENSIONS -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 3 BD237 Motorola reserves the right to make changes without further notice to any products herein. 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