BD242B - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

   

 

. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing

complementary or quasi complementary circuits.

•DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCBO

ÎÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current

ÎÎÎÎÎ

ÎÎÎÎÎÎ

2.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎ

1.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

ÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

–55 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

5.0

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage*

(IC = 0.1 Adc, IB = 0)

ÎÎÎÎÎÎ

V(BR)CEO

ÎÎÎÎ

ÎÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ÎÎÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎÎ

0.1

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎÎ

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.15 A, VCE = 2.0 V)

(IC = 1.0 A, VCE = 2.0 V)

ÎÎÎÎÎÎ

hFE1

hFE2

ÎÎÎÎ

ÎÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage*

(IC = 1.0 Adc, IB = 0.1 Adc)

ÎÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎÎ

0.6

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage*

(IC = 1.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎÎ

1.3

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎÎÎ

ÎÎÎÎ

3.0

ÎÎÎÎÎ

—

ÎÎÎÎ

MHz

*Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.



SEMICONDUCTOR TECHNICAL DATA Order this document

by BD237/D

 Motorola, Inc. 1995



2.0 AMPERES

POWER TRANSISTORS

NPN SILICON

80 VOLTS

25 WATTS

CASE 77–08

TO–225AA TYPE

REV 7

BD237

2 Motorola Bipolar Power Transistor Device Data

Figure 1. Active Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1 3 10 30 100

0.3

IC, COLLECTOR CURRENT (AMP)

TJ = 150

Cdc

5 ms

100

1 ms

BD237

BD236

The Safe Operating Area Curves indicate IC – VCE limits

below which the device will not enter secondary breakdown.

Collector load lines for specific circuits must fall within the ap-

plicable Safe Area to avoid causing a catastrophic failure. To

insure operation below the maximum TJ, power–temperature

derating must be observed for both steady state and pulse

power conditions.

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 2. Collector Saturation Region

IB, BASE CURRENT (mA)

1.0

00.2

0.8

0.6

0.4

0.2

1.0 2.0 10 30 50 200

IC = 0.1 A 0.25 A 1.0 A0.5 A

0.3 0.5 100203.0 5.0

TJ = 25

1000

Figure 3. Current Gain

IC, COLLECTOR CURRENT (mA)

100 TJ = + 150

TJ = + 55

VCE = 2.0 V

hFE, DC CURRENT GAIN (NORMALIZED)

700

500

300

200

TJ = + 25

3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500

Figure 4. “On” Voltages

1.5

3.0 5.0 10 20 30 50 20002.0 100 200 1000300 500

1.2

0.9

0.6

0.3

IC, COLLECTOR CURRENT (mA)

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VOLTAGE (VOLTS)

VBE @ VCE = 2.0 V

Figure 5. Thermal Response

t, TIME or PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500

JC(t) = r(t)

JC = 4.16

C/W MAX

JC = 3.5

C/W TYP

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

D = 0.2

D = 0.1

D = 0.05

D = 0.01

BD237

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

BD237

4 Motorola Bipolar Power Transistor Device Data

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BD237/D

*BD237/D*

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