2N5152L Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa offers: * High-speed power switching * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N5152LJ) * JANTX level (2N5152LJX) * JANTXV level (2N5152LJV) * JANS level (2N5152LJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 9701 Reference document: MIL-PRF-19500/544 Benefits * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 80 Collector-Base Voltage VCBO 100 Unit Volts Volts Emitter-Base Voltage VEBO 5.5 Volts IC 2 A 1 5.7 11.8 66.7 175 15 W mW/C W mW/C -65 to + 200 C Collector Current, Continuous O Power Dissipation, TA = 25 C Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC PT PT Thermal Resistance RJA RJC Operating Junction Temperature Storage Temperature TJ TSTG Copyright(c) 2006 Rev. D-2 C/W Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N5152L Silicon NPN Transistor D a ta S h e e t ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Collector-Emitter Cutoff Current ICEO Collector-Emitter Cutoff Current ICEX Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Test Conditions IC = 100 mA ICES1 ICES2 IEBO1 IEBO2 Base-Emitter Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Max Units Volts 50 A 500 A 1 1 1 1 A mA A mA 80 Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Symbol hFE1 hFE2 hFE3 hFE4 DC Current Gain Typ VCE = 40 Volts VCE = 60 Volts, VEB = 2 Volts, TA = 150C VCE = 60 Volts VCE = 100 Volts VEB = 4 Volts VEB = 5.5 Volts On Characteristics Parameter Min VBE VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 50 mA, VCE = 5 Volts IC = 2.5 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 2.5 A, VCE = 5 Volts TA = -55C VCE = 5 Volts, IC = 2.5 A IC = 2.5 A, IB = 250 mA IC = 5 A, IB = 500 mA IC = 2.5 A, IB = 250 mA IC = 5 A, IB = 500 mA Min 20 30 20 15 Test Conditions VCE = 5 Volts, IC = 500 mA, f = 10 MHz VCE = 5 Volts, IC = 100 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, f = 1 MHz Min Typ Max Units 90 1.45 1.45 2.20 0.75 1.50 Volts Max Units 250 pF 1.4 0.5 0.5 1.5 s Volts Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Symbol |hFE| hFE COBO Typ 6 20 Switching Characteristics Storage Time Fall Time Saturated Turn-On Time Saturated Turn-Off Time Copyright(c) 2006 Rev. D-2 ts tf tON tOFF IC = 5 A, IB1=IB2 = 500 mA, VBEoff = 3.7 Volts, RL = 6 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2