112 Optoisolators QUICK REFERENCE CHART MIN. MIN. MIN. OUTPUT CURRENT DC VOLTAGE TYPICAL PACKAGE TRANSFER ISOLATION RATING BANDWIDTH OUTPUT FORMAT PRODUCT KEY PACKAGE TYPE RATIO VOLTAGE (BYCEO) R, = 1002 TRANSISTOR MCT2 A 6 LEAD PLASTIC DIP 20% 1500 V 30V 150 kHz TRANSISTOR MCT2E A 6 LEAD PLASTIC DIP 20% 2500 V 30V 150 kHz TRANSISTOR MCT210 A 6 LEAD PLASTIC DIP 150% 4000 V 30V 150 kHz TRANSISTOR MCT26 A 6 LEAD PLASTIC DIP 6% 1500 V 30V 150 kHz TRANSISTOR MCT4 Cc TO-46 METAL CAN 15% 1000 V 30V 150 kHz TRANSISTOR MCT4R* Cc TO-46 METAL CAN 15% 1000 V 30V 150 kHz TRANSISTOR MCT6 B 8 LEAD PLASTIC DIP 20% 1500 V 30V 150 kHz DUAL CHANNEL TRANSISTOR MCT66 B 8 LEAD PLASTIC DIP 6% 1500 V 30V 150 kHz DUAL CHANNEL , TRANSISTOR 4N25 F 6 LEAD PLASTIC DIP 20% 2500 V 30V 300 kHz TRANSISTOR 4N26 F 6 LEAD PLASTIC DIP 20% 1500 V 30V 300 kHz TRANSISTOR 4N27 F 6 LEAD PLASTIC DIP 10% 1500 V 30V 300 kHz TRANSISTOR 4N28 F 6 LEAD PLASTIC DIP 10% 500 V 30V 300 kHz TRANSISTOR 4N35 F 6 LEAD PLASTIC DIP 100% 3550 V 30V 150 kHz TRANSISTOR 4N36 F 6 LEAD PLASTIC DIP 100% 2500 V 30V 150 kHz TRANSISTOR 4N37 F 6 LEAD PLASTIC DIP 100% 1500 V 30V 150 kHz DARLINGTON TRANS. MCA230 A 6 LEAD PLASTIC DIP 100% 1500 V 30V 10 kHz DARLINGTON TRANS. MCA231 A 6 LEAD PLASTIC DIP 200% 1500 V 30V 10 kHz DARLINGTON TRANS. MCA255 A 6 LEAD PLASTIC DIP 100% 1500 V 55V 10 kHz DARLINGTON TRANS. 4N29 F 6 LEAD PLASTIC DIP 100% 2500 V 30V 30 kHz DARLINGTON TRANS. 4N30 F 6 LEAD PLASTIC DIP 100% 1500 V 30V 30 kHz DARLINGTON TRANS. 4N31 F 6 LEAD PLASTIC DIP 50% 1500 V 30V 30 kHz DARLINGTON TRANS. 4N32 F 6 LEAD PLASTIC DIP 500% 2500 V 30V 30 kHz DARLINGTON TRANS. 4N33 F 6 LEAD PLASTIC DIP 500% 1500 V 30V 30 kHz *Reliability conditioned to MIL-STD-883, Method 5005/B, 100% pre-conditioning. FORWARD MAX. pc BLOCKING TURN-ON PACKAGE ISOLATION VOLTAGE CURRENT OUTPUT FORMAT PRODUCT KEY PACKAGE TYPE VOLTAGE (VDRRM) (Ip) SCR MCS2 A 6 LEAD PLASTIC DIP 1500 V 200 V 14.0 mA SCR MCS2400 A 6 LEAD PLASTIC DIP 1500 V 400 V 14.0mA 2 SCRs (CONNECTED ANODE TO CATHODE) MCS6200 B 8 LEAD PLASTIC DIP 1500 V 200 V 14.0mA 2 SCRs (CONNECTED ANODE TO CATHODE) McCS6201 B 8 LEAD PLASTIC DIP 2500 V 200 V 14.0 mA MIN. MIN. DC BINARY MAX. TYP. OUTPUT PACKAGE ISOLATION DATA RATE TRIGGER HYSTERESIS FORMAT PRODUCT KEY PACKAGE TYPE VOLTAGE (BDR) (Ip) (Alp) LOGIC GATE MCL601 B 8 LEAD PLASTIC DIP 2000 V 0.10 MHz 5.0mA 1.0 mA OPEN COLLECTOR LOGIC GATE MCL611 B 8 LEAD PLASTIC DIP 2000 V 1.0 MHz 15.0mA 5.0 mA OPEN COLLECTOR (TOTEM POLE OUTPUT MCL600 & MCL610 available February, 1977.) MAX. OUTPUT PACKAGE PACKAGE COLLECTOR TYPICAL DARK CURRENT FORMAT PRODUCT KEY TYPE CURRENT (Ic) BANDWIDTH (IcEo) TRANSISTOR MCT8 E rene LIMIT 200 uA @If= 20 mA, VcE=10V 150 kHz 100 nA TRANSISTOR MCT81 E etn LIMIT 50 uA @ Ip = 20 mA, Vox =10V 200 kHz 100 nA IT DARLINGTON MCA7 D REFLECTIVE 50 uA @Ip=50 mA, VCR =5 V 0.8 kHz 100 nA SENSOR SWITCH DARLINGTON MCA8 E Sach LIMIT 2mA @Ip=16mA, Vcp=1V 0.8 kHz 100 nA WITCH DARLINGTON MCA81 E SLOTTED LIMIT 1.6 mA @Ip= 50 mA, Vof=1V 1.5 kHz 100 nA SWITCH165 DUAL PHOTOTRANSISTOR MCT6 OPTO-ISOLATOR PRODUCT DESCRIPTION The MCT6 opto-isolator has two channels for high density applications. For four channel applications, two-packages fit into a standard 16-pin DIP socket. At the input, a GaAsLITE emitting diode generates infrared light proportional to current passing through the diode in the forward direction. At the output, a silicon phototransistor detects and amplifies the photocurrent generated in its photosensitive base region. Light coupling electrically isolates the input from the output. PACKAGE DIMENSIONS 411 DIMENSIONS IN INCHES FEATURES .390 5 be-- 060 5 8 Two isolated channels per package rs 7 et Two packages fit into a 16 lead DIP socket | ok nn = Same basic electrical characteristics as MCT2 | '@ 3 1500 voit isolation 250 N 300 w 50% typical current transfer ratio | APPLICATIONS > #= AC Line/Digital Logic ......... isolate high voltage transients |. = = Digital Logic/Digital Logic. ...... Eliminate spurious grounds = Digital Logic/AC Triac Control . . . . Isolate high voltage transients gO E Twisted pair line receiver........ Eliminate ground loop feedthrough Q (7) = Telephone/Telegraph tine receiver. . . Isolate high voltage transients e (6) c 8 High Frequency Power Supply a @ G Feedback Contro!l........... Maintain floating ground +||.o18 + 002 cas? mors e Relay contact monitor......... Isolate floating grounds and transients NOTE: CHIPS ARE LOCATED ON PINS 2, 3,6 AND 7 = Power Supply Monitor. ........ tsolate transients 0, Oo, ABSOLUTE MAXIMUM RATINGS Storage Temperature -55C to 150C Operating Temperature -55C to 100C Lead Temperature (soldering, 10 sec.) 250C INPUT DIODE (each channel) OUTPUT TRANSISTOR (each channel) Rated forward current, DC. ...........045 60 mA Power dissipation @ 25C ambient .......... 150 mW Peak reversecurrent ............0.00006 10 vA Derate finearly from 25C 2... ee ee ee 2 mW/C Peak forward current (1s pulse, Collector Current... 2... 2 eee ee ee ee 30 mA B00 pps)... ee et ee es 3A COUPLED Power dissipation at 25C ambient ......... 100 mW Input to output breakdown voltage... .. - 1500 volts DC Derate linearly from 50C... 6.2... ee ee 2 mw/c Total package power dissipation @ 25C ambient . . 400 mW Derate linearly from 25C ..........--- 5.33 mW/C ELECTRO-OPTICAL CHARACTERISTICS (25C Free Air Temperature Unless Otherwise Specified) CHARACTERISTICS MIN. TYP. MAX. UNITS TEST CONDITIONS INPUT DIODE Rated forward voltage V- 1.25 1,50 Vv I; = 20mA Reverse voltage VR 3.0 25 Vv IR =10uA Reverse current Ip .01 10 HA Vp_ =3.0V Junction capacitance Cy 50 pF Ve =OV OUTPUT TRANSISTOR (I, = 0) Breakdown voltage, collector to emitter BVcEo 30 85 Vv le =1.0mA Breakdown voltage, emitter to collector BVEeco 6 13 Vv lo= 100 uA Leakage current, collector to emitter lceo 5 100 nA VceE =10V Capacitance collector to emitter Coe 8 pF VcE =OV COUPLED DC current transfer ratio (Io/le) CTR 20 50 % Vee = 10V, 1p = 10mA Isolation voltage BV (1.0) 1500 2500 voc Isolation resistance Rau) 101? 1012 a Vio = 500 VDC Isolation capacitance Cy.0) 0.5 pF f=1 MHz Breakdown voltage channel-to-channel 1500 Vv Relative humidity = 40% Capacitance between channels 0.4 pF f= 1 MHz Saturation voltage collector to emitter VeE(SAT) .20 -40 Vv lo =2mA, le =16mA Bandwidth By, 150 kHz IG =2MA, Veg = 10 V, Ry = 100 2ics MCTG ELECTRO-OPTICAL CHARACTERISTICS (Cont) CHARACTERISTICS MIN, TYP. MAX. UNITS TEST CONDITIONS SWITCHING TIMES, OUTPUT TRANSISTOR Non-saturated rise time, fall time 2.4 bs le =2 mA, Vee =10V, R, = 1002 Non-saturated rise time, fail time 15 Us lo =2 mA, Vce =10V, Ry = 1KQ Saturated turn-on time (from 5.0 V to 0.8 V) 5 Us Re = 2 kKQ, le =15mA Saturated turn-off time (from saturation to 2.0 V) 25 Us Re =2KQ, le =15 mA TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (25C Free Air Temperature Unless Otherwise Specified) 50 1.0 140 R= 50% dp = e * VE =5.0V o 8 o Ta = 25C \ | 8 < 0 , g Fr t 7 a 100 5 iw 5 30 o 6 G 3 > 2 80 2 < 5 a 5 2 F 5 60 5 20 <4 5 4 ze = a q 3 ax 40 a 5 10 2 5 i Ee 1 20 oO a4 & & & = 0 > 0 2 oO 0 10 20 30 40 50 1 5 10 60 0.1 2.3.45 10 2345 10 20 40 100 Voge COLLECTOR VOLTAGE VOLTS lp FORWARD CURRENT mA_ C859 ip FORWARD CURRENT - mA _ C860 cass Figure 1 1-V Curve of Phototransistor Figure 2 !-V Curve in Saturation Figure 3 CTR vs. Forward Current xe 1 130 T T T T T T 105 2 am HIGH CURRENT TRANSFER 2 < RATIO 110 MN 1 > z & =e L L. id 1 106 ire ~ T Se oO 5 2 90 {| < Ff oc = | mM 3 = 197 r Lf | ms ? 3 5 70 y 1 5 nf ~ 7 oe w LOW CURRENT TRANSFER RATIO < 9 | | 2 z 108 a STE rs 1 5 a a ~ | Ip = 10mA a4 a aK 11 Veg = 10V - 1109 N 307 iad T ce 7 o ip sz) 0 < CTR = = | 2 = 10 E A 1910 = 60 40 20 0 2 40 60 80 100 10.2 5 1 2 5 10 20 50 100 20 30 40 50 60 70 80 90 100 AMBIENT TEMPERATURE (C) 861 Ip FORWARD CURRENT mA C862 Tp, AMBIENT TEMPERATURE C C863 Figure 4 Current Transfer Ratio Figure 5 !-V Curve of LED vs. Temperature Figure 6 Leakage Current vs. Temperature vs. Temperature vs. Collector Voltage 10 Veg =10V q PULSE # = INPUT 472. | 50 1.5 kV UNITS wi 5 > 2 = x RMS DETECTOR < w 1.5 kV UNITS g 9 2 10 z < 2 1. x 5 10 5 e OUTPUT a S = a > = be wn = z R, = 1008 5 L 3 Ta = 25C ' 0.1 0.1 020304060810 2 3 4567810 100 1000 10,000 100,000 10 100 1K COLLECTOR CURRENT Ic (mA) C864 TIME-HOURS ca65 FREQUENCY Hz C866 Figure 7 Switching Time vs. Figure 8 Lifetime vs. Forward Fig. 9. Steady-State AC Voltage Collector Current Current (Note 1) Limit of Isolation Dielectric NOTES CTR. CTR 1. Normalized CTR degradation = ___9_____-_ cTR,