TOPAZ SEMICONDUCTOR OSE D B soasaa. goooLoeb 7? i TWOWlEA ZS SEMICONDUCTOR Te 29-25 $D1100, $D1104 N-CHANNEL ENHANGEMENT-MODE HIGH-VOLTAGE D-MOS POWER FETS ORDERING INFORMATION In TO-226AA TO-206AA TO-205AF FEATURES Hi Gate Stand-off, 40V min. l@ P-channel complements available, VP0540 series @ Wide variety of Packages _ SD1101BD SD1i00DD DD FIOOHD . SD1HOIHD 35 ohm 25 ohm APPLICATIONS @ Motor Controls @ Line Drivers @ Power Supplies ABSOLUTE MAXIMUM RATINGS (Tc. = +25C unless otherwise noted) Drain-Source Voltage SD100 2... ccc cee ence een ee eee eenee 450V SDN oo. eee cece cee eee eee ee seen eeeeeaee 400V Drain-Gate Voltage (Res = 1MQ) SDI... 2c cece cece eee e eee nee 450V SDT Lecce cee eee eee nent tenes 400V Gate-Source Voltage 2.02... cece eee rece eens 40V Continuous Drain Current Toe = +100C =e = 425C SD1100DD A0A ATA SD1100HD 21A 338A $D1101BD AA ABA $D1101DD ABA 21A $D1101HD 26A MA Peak Pulsed Drain Current ...........:cceee scenes 0.25A PIN CONFIGURATIONS DRAIN TO-205AF TO-226AA (TO-39) (TO-92) wert t t t ce(O] 1 ---4 De | 4 sg Oo SOURCE See Package 6 See Package 5 See Package 1 Maximum Power Dissipation Te = +100C = Tog = +25C HD, TO-39 Pkg. 2.75W 6.88W BD, TO-92 Pkg. O.6W 1.35W DD, TO-18 Pkg. 0.7W 1.80W Linear Derating Factor Junction Junction to Ambient to Ambient (mW/C) (mW/C) HD, TO-39 Pkg. 36.6 55 BD, TO-92 Pkg. 6.66 10.8 DD, TO-18 Pkg. 9.33 14.4 Operating Junction and Storage Temperature Range ....,.... ~55C to +150C Lead Temperature (1/6 from mounting surface for 10 Sec) ..... cc cece cece eee eee +260C CHIP CONFIGURATION TO-206AA (TO-18) DC g $ Dimensions: .054 x .051 x .020 in. Drain is backside contact. 3-70 0-88-6 fiTOPAZ SEMICONDUCTOR OSE D B soasea. O001,0e7 49 i VOIFAZ $D14100, $D1104 SEMICONDUCTOR T-29-25 ELECTRICAL CHARACTERISTICS (T, = +25C unless otherwise noted) $D1100 spD1101 # CHARACTERISTIC UNIT TEST CONDITIONS MIN | TYP | MAX| MIN | TYP | MAX 1 Boss Bet, down Voltage 450 | 475 400 | 425 V_ [ip = 10A, Vag = 0 | Gate Forward 2 lassr Leakage Current 03 | 10 03 |; 10 Vas = 20V ft Gate R nA Vps =0 ate Reverse 3 lessr Leakage Current -.03 | -10 ~0 | -10 Ves = -20V 4 20 | 200 DA _|Vpg = 360V LS | I Drain-Source OFF 2.0 uA |Vas=0 Te = +126C pss | 6 | Leakage Current 201200! nA Vps = 820V 7 20] pA |Vas=90 To = +125C Gate Source 8 Vest) Threshold Voltage 10 | 30] 50/40/30] 50] V_ IIb = 10A, Vpg = Vas | 9 | Ip(ony ON Drain Current 250 | 750 250 | 750 MA |Vps = 25V, Vag = 10V | 10 | 1 Drain-Source ON 3 | 3 13 | 25 ohms |Vas = 10V 11 PS(ON) Resistance 49 | 60 49 | 42 Ip = 10mA To = 125C 12 Sts Forward Transconductance | 250 | 400 250 | 400 pos ey Ip = 260mA | 2 Common-Source wv = Piss Input Capacitance 80 | 100 80 | 100 r jz > Common-Source _ - 181] ons Reverse Transfer 13 | 25 13 | 25 | pr [Yes 25M Vas = 0 . f = IMHz Capacitance Common-Source 2 Sess Output Capacitance 105 | 15 10.5 | 15 Note 4: Pulse Test 80uSec, 1% Duty Cycle 3-71TOPAZ SEMICONDUCTOR GSE D B soaseen 0001026 O i TAIFAZ SEMICONDUCTOR | T-29-25 $D41100, SD4101 TYPICAL PERFORMANCE CHARACTERISTICS (T, = +25C unless otherwise specified) FosjonjON RESISTANCE TS{on)ON RESISTANCE ON RESISTANCE vs GATE-SOURCE VOLTAGE To = +125C To = VagGATE-SOURCE VOLTAGE(Volts) ON DRAIN CURRENT VS GATE-SOURCE VOLTAGE c JofonyON DRAIN CURRENT(Amps) DUTY CYCLE VasGATE-SOURCE VOLTAGE(Volts) FORWARD TRANSCONDUCTANCE ON DRAIN CURRENT ON RESISTANCE "| GATE-SOURCE VOLTAGE Vos = 25V PULSE TEST G0uSec, 1% DUTY CYCLE Gta-FORWARD TRANSCONDUCTANCE(mS) To = Vas GATE-SOURCE VOLTAGE (Volts) 50 100 150 200 250 300 350 logon) ON DRAIN CURRENT(mA) 3-72