MOTOROU
SEMICONDUCTOR TECHNICAL DATA Orderthls document
by2N37-D
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2N3743JTX, JTXV
2N4931JTX, JTXV
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Processedper MlL4-19500/397 ,11 :‘t.
PNP Silicon, High Voltage A: ‘L
Small+ignal Transistors qejlai
Plmlachnologle:Operallon
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...d-igned for genera~urpose switchingandamplifierapplications. S.”a<$
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IELECTRICALCHARACTERISTICS-ti:~
@TC =100°C #$,.\,
.,,.:1 5.0 Watts
Derate above 25°C .....
~,7$:...l,~l\~ 28.6 W/ac
Operating Junction and Storage TJ;:q;&&, ““ -65 to 200 “c
Temperature Range .,
,>-.+%~~b
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Me unless otherwise noted.)
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CASE 7$04, SWLE 1
T@205AD ~039)
IISymbol /Mln 1M= IUnit I
I
(.. .
Colleotor+mitter Bre&do~,~q~@) V(BR)CEO Vdc
(Ic =1.0 tik, iB =O) $k,} “$ 2N3743 300
?<.)!~,i:? 2N4931 250
.:,?..
Coil-or~e BrX’%Vol@ge V(BR)CBO Vdc
(1C=100 @,$~%,~o)’ 2N3743 300
\.*,
“’.:,<:., \,.,“< 2N4931 250
Emtier#&’$r&down Vohge V(BR)EBO 5.0 Vdc
(IE ‘, f~o $WI IB=0)
(1) P&&:~ulse Width 250 to 360 W, Duty Cycle 1.0to 2.0%.
.l:~.,} (untinued)
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RN O
9/93
@M~ROLA
@Motorola,Inc. 1994
2N3743J~, 2N4931J~ SERIES
ELECTRICAL CHARACTERISTICS mntinud fl~. 25°C unless otherwise noted.)
Chare~rlatlc Symbol Mln Mm IUnit
OFF CHARACTERISTICS (~ntinued)
ColleotorCutoffCurrent
~CB =250 Vdo) !CBO
2N3743 250 nAdc
NCB =200 vtij —--
WCB =.250 VdO, TA =25°C) 2N4931 250 *,\
2N3743
~CB =200 Vdo, TA =25”C) 100 fla,:.~~k,
2N4931 100 ,~h$,$,~,
.1$
,:. ,.~i:,.
Emitter Cutoff Current WEB. 4.0 Vdo) IEBO 150 .,,4,,43+’
ON CHARACTERISTICS(I) ,;>+!,4;{.‘*.$,\
DCCurrent Gain
(IC =0.1 mAdo, VCE =10 Vdo)
(1c .1.0 tide, VCE =10 Vdc)
(IC =10 rnAdc, VCE =10 Vdo)
(IC =30 mAdc, VCE =10 V*)
(Ic =50 tide, VCE =20 Vdo)
(Ic =30 rnAdc, VCE =10 Vdc, TA =+5°C)
Colleotor-Emitter Satumtion Vokae
(It= 10rnAdo,iB=l.OmAW) -
(1c=30 Ado, IB =3.0 tide)
Bes+EmMer Saturation Voltage
(!c=lOtidO,!B=l.OtidO)
(IC .30 tik, IB=3,0 tidO)
SMALL=IGNAL CHARAtiERISTICS
hFE
vcE($at)
VBE(sst) .* I1.0
k1.2 I
;~.,~~,
,.
~~~##Ptium4n Measured Values Mln M=
D*.@-r Cutoff
Current AIcBO *100 YOofInitial Value
:~,
.. or SO nA&
whichever is greater
Delta DC Current Gain(l) AhFE Mo %of Initial Value
(1) Pulsed. Pulse Wdth 250 to 350 W, D@ Qcle 1.0 to 2.0%.
o
COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA
M6
fIefi blank.
2N3743J~, 2N493fJ~ SERIES
PAC~GE DIMENSIONS
3P
21kDUffi.
~:$~:.~’
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Motomlar~w~i@&&tieck~mtitbtifuWw~Wto~~d@ herein. MotorolamWes ~warranty, repr~MorguW~r@ng
the suifabl~i o~~~~ for any @wlar purpose, nor does Motorola wme any fitillty arising out ofthe appfimtion or use of any Xor cirmk,
andepedfi~*@sany and dl li~~i, ind~ingwithoutlimhtin -uentidorltidentd damages. ~~~perametersoan anddo~indifferent
epph-q~. ~~~~ng parameters, imluding 7-Y must be vd~td for e=h mefomer qtimtion by tiorner’s t~hnti e~rts. Motorola does
not mn~~ an~ knee under bpatent rightsnorthe rights of othem. Motorola produde are not designed, intended, or authorized for use as oom~nte in
for eurgi~ lm~ intothe body,orother eppNtiione infeti to support or sustain ~ie, orfor any other appSMtion in whti the failure of
@oould Haste aeNuation where pereond ln]u~ or death may -r. Should Buyer pumhese or use Motorola prod- for any wh
orunauthorized sppN@brr, Byerehdl i~mrrwand how Motorola end Woffrrs, em@oyeee, su~i~.es, ~Katee, end detributom harmless
*, -a9SS, and experreee, and ressorr~ attorney fees a.sing out of, direofh or Indirdy, any ddm of personal bjury or death
~h unintended or unauthorized use, even Ksuohdeim aNegee that Motorola was negligent reg~~ the design or manuf~re ofthe ~
are registered tredemw of Motorola, Ino. Motorola Ino. Is en Eq@ O~rtunitv/Affirrnetive Ation Ernolover.
Lfteraturs Dlstrfbution Centern
USA: Motorola Merature Dietributiow P.O.Wx 20912 Phoenix,Arizona m.
EUROPE: Motorola Ltd.; European Ltierature Oerrtrq SSTannersDrfvepBl*elsnds, Milton Keynes, MK14 5BP,England.
JAPAN Nippon Motorola Ltd.;42-1, Nlshffiotanda, ShinagawHu, To~o 141, Japan.
ASIA PACIFIC Motorola Semimnd@om H.K. Ltd.;si~in Hartmur Center, No. 2Dai King Street, Tsi Po Industrid Estate,Tai Po, N.T., Hong Kong.
@M-ROLA 1PHX241011-2 PRINWD IN USA WS4 MPWPOD CPTO YDACAA 2N37WTWD
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