M1FS4
40V 1.33A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Case: Unit:mm
OUTLINE DIMENSIONS
RATINGS
SHINDENGEN
Case:M1F
FEATURES
APPLICATION
●Small SMT
●Tj150℃
●Low VF=0.45V
●PRRSM avalanche guaranteed
●Switching power supply
●DC/DC converter
●Home Appliances, Office Equipment
●Telecommuniction
●AbsoluteMaximumRatings(IfnotspecifiedTl=25℃)
Item Symbol Conditions Ratings Unit
StorageTemperature Tstg -55〜150 ℃
OperatingJunctionTemperature Tj150 ℃
MaximumReverseVoltage VRM 40 V
RepetitivePeakSurgeReverseVoltage VRRSM Pulsewidth0.5ms,duty1/40 45 V
AverageRectifiedForwardCurrent IO50Hzsinewave,R-loadTa=25℃ Onaluminasubstrate 1.33 A
50Hzsinewave,R-loadTa=25℃ Onglass-epoxysubstrate 0.87
PeakSurgeForwardCurrent IFSM 50Hzsinewave,Non-repetitive1cyclepeakvalue,Tj=25℃ 30 A
RepetitivePeakSurgeReversePower PRRSM Pulsewidth10μs,Tj=25℃ 60 W
●ElectricalCharacteristics(IfnotspecifiedTl=25℃)
Item Symbol Conditions Ratings Unit
ForwardVoltage VFIF=1.1A,Pulsemeasurement Max.0.55 V
ReverseCurrent IRVR=10V,Pulsemeasurement Max.0.8 mA
JunctionCapacitance Cj f=1MHz,VR=10V Typ.50 pF
θjl junctiontolead Max.20
ThermalResistance θja junctiontoambient Onaluminasubstrate Max.108 ℃/W
junctiontoambient Onglass-epoxysubstrate Max.186
Single
Schottky Rectifiers (SBD)
Forward Voltage
00.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0.1
1
10
M1FS4
Tl=150°C [MAX]
Tl=25°C [MAX]
Pulse measurement per diode
Tl=150°C [TYP]
Tl=25°C [TYP]
Forward Voltage VF [V]
Forward Current IF [A]
10
100
M1FS4
0.1 1 10
0.05 0.50.2 20 5052 200 500 2000 5000
0.02 0.05 0.50.2 20520.0050.002
Reverse Voltage VR [V]
Junction Capacitance Cj [pF]
f=1MHz
Tl=25°C
TYP
Junction Capacitance
Reverse Current
0.01
0.1
1
10
100
1000
010 20 30 40 50 60
M1FS4
Tl=150°C [MAX]
Tl=150°C [TYP]
Pulse measurement per diode
Tl=125°C [TYP]
Tl=100°C [TYP]
Tl=75°C [TYP]
Reverse Voltage VR [V]
Reverse Current IR [mA]
0
0.5
1
1.5
2
010 20 30 40 50
M1FS4
0.3
Reverse Power Dissipation
Tj = 150°C
SIN
0.2
0.5
D=0.05
DC
0.1
0.8
Reverse Voltage VR [V]
Reverse Power Dissipation PR [W]
0
tp
VR
T
D=tp/T
0tp
IO
T
D=tp/T
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 0.5 1 1.5 2 2.5
M1FS4
0.3
Forward Power Dissipation
Tj = 150°C
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
Average Rectified Forward Current IO [A]
Forward Power Dissipation PF [W]
0
tp
IO
T
D=tp/T
020 40 60 80 100 120 140 160
0
0.4
0.8
1.2
1.6
2
2.4
M1FS4
0.3
Derating Curve
VR = 20V
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
0
VR
Ambient Temperature Ta [°C]
Average Rectified Forward Current IO [A]
Alumina substrate
Soldering land 2mmφ
Conductor layer 20µm
Substrate thickness 0.64mm
0
tp
IO
T
D=tp/T
020 40 60 80 100 120 140 160
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
M1FS4
0.3
Derating Curve
VR = 20V
SIN
0.2
0.1
D=0.8
DC
0.5
0.05
0
VR
Ambient Temperature Ta [°C]
Average Rectified Forward Current IO [A]
Glass-epoxy substrate
Soldering land 2mmφ
Conductor layer 35µm
Peak Surge Forward Capability
0
10
20
30
40
50
1 10 100
M1FS4
2 5 20 50
IFSM
10ms 10ms
1 cycle
Number of Cycles [cycles]
Peak Surge Forward Current IFSM
[A]
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
tp
IRP
0
VR
0.5IRP VRP
IR
PRRSM = IRP × VRP
0
20
40
60
80
100
120
050 100 150
SBD Repetitive Surge Reverse Power Derating Curve
Junction Temperature Tj [°C]
PRRSM
Derating [%]
0.1
1
10
1 10 100
SBD Repetitive Surge Reverse Power Capability
Pulse Width tp [µs]
PRRSM
(tp) / PRRSM
(tp=10µs) Ratio
tp
IRP
0
VR
0.5IRP VRP
IR
PRRSM = IRP × VRP