Power Transistors 2SA794, 2SA794A Silicon PNP Epitaxial Planar Type AF Output Drivers Complementary Pair with 2SC1567, 2SC1567A @ Features High collector-emitter voltage (Vceo) Optimum for 40~100W AF output driver @ TQ-126 package, no insulator needed when fixing to a heat sink 2SA794, 2SA794A @ Package Dimensions Unit : mm 3.240.2 2 3 11.0405 a us T 3,05 0.1|be-o! 420 @ Absolute Maximum Ratings (Ta=25C) = Item Symbol Value Unit foe volage [asa] YC [ae] 2SA794 100 _Otsetal L520. 0.5401 1.760.1 emitter vollage | 2SA7S4A | Y* 120 v PJusso2 Emitter-base voltage Vepo 5 Vv . 1: Emitter Peak collector current Icp l A 3 Bee tor Collector current Ic 0.5 A JEDEC : TO-126(b) Collector power dissipation Pc 1.2 WwW Junction temperature T; 150 c Storage temperature Tatg ~55~ +150 Cc @ Electrical Characteristics (Tc=25C) Item Symbol Condition min. typ. max. | Unit 2SA -1 cnltten voltage aa A Vceo Ic=100 4 A, Is=0 a Vv Emitter-base voltage VeEBo Ir=-1 yA, Ic=0 5 Vv . hre:* Vce=-10 V, Ic=150 mA 65 160 330 DC current gain hrez Vce=5 V, Ic=500 mA 50 100 Collector-emitter saturation voltage Vcktsaty Ic= 500 mA, Ip= 50 mA 0.2 | 0.4. Vv Base-emitter saturation voltage Vera | Ic=500 mA, Ip=50 mA 0.85 | -1.2 V Transition frequency fr Vecp= 10V, Ip=50mA, f= 200MHz 120 MHz Collector output capacitance Cop Vea =10 V, Ie =0, f=1 MHz 20 30 pF *hre: Classifications Class P Q R $ hres 65~ 110 90~ 155 130~220 185~ 330 @ 6932852 00160959 07 93 PanasonicPower Transistors 2SA794, 2SA794A Po Ta . IcVce oe Ic-Ip (1) With a 100X100 2mm Al heat sink (2) Without heat sink NS Collector current Ic (A) Collector power dissipation Py (W) Collector current Tc (A) _ 0 = = = Ambient temperature Ta (C) Collector-emitter voltage Ve: (V) Base current Iy (mA) Ic Vpe Vegaty Te Vagisat) Ic Ver= 10V -3 Ic/Ip=10 3 Ic/Ig=10 = - a pot < & > 4-0. s & = $ & < s 2 5-0. 5S -0.3 3 3 c o7 3 hk a wo 5 3 5 3 2-01 Bg -o.2 3 5 : s 5 5 -0. % 0.03 2 3 3 oO 5S -4a. 0.01 = a= = ~0.01 -0.03 O1 0. =1 0. ~03 =] Base-emitter voltage Vir (V) Collector current Ip (A) Collector current I (A) hreIc frIkg Con Ves 200 Voe= 10V 2 = FS & Ss 68 Ss DC current gain hi, & Transition frequency f; (MHz) g S Ss Collector output capacitance C., (pF) nm S 0.01 -0. -G.1 -0.3 -4 1 203 5 10 20:30 50 100 2- -10 =50 Collector current Ic (A) Emitter current I; (mA) Collector-base voltage Vex (V) M 6932452 0016100 155 Panasonic ; 94Power Transistors 2SA794, 2SA794A IceoTa IepoTa Area of safe operation (ASO) S 4 -1 Ver=20V 10 Vop= 20V Ten -O.1 Iceo (Ta) Icco (Ta = 25C) Icuo(Ta) Icpo(Ta=25C) Collector current I; (A) 9.0 0.00 -1 +3 -10 30 = 100-300 1000 Ambient temperature Ta (C) Ambient temperature Ta (C) Collector-emitter voltage Vey (V) Me 6932852 0016101 055 = H Panasonic