Ordering number: EN 3018 | No.3018/ 25A1697/2SC4474 PNP/NPN Epitaxial Planar Silicon Transistors High-Definition CRT Display, Video Output Applications Applications - High-definition CRT display video output, wide-band amp. Features - High frp: fp = 300MEHz : High breakdown voltage : Vop9o =200Vmin - Small reverse transfer capacitance and excellent high frequency characteristic : cp.=2.2pF/NPN, 2.7pF/PNP. - Adoption of FBET process. - Micaless type. ( ): PNP Absolute Maximum Ratings at Ta= 25C unit Collector-to Base Voltage Vcso ()200 Vv Collector-to-Emitter Voltage Vero ()200 Vv Emitter-toBase Voltage VEBO (-}3 v Collector Current Ie ()200 mA Peak Collector Current lop ()300 mA Collector Dissipation Pa 1.8 WwW Te= 60C 10 60UW Junction Temperature Tj 150 C Storage Temperature Tstg 55to+150 C Electrical Characteristics at Ta = 25C min typ max unit Collector Cutoff Current IcBo Ven=()150V Ip=0 {(-)0.1 pA Emitter Cutoff Current IzBo Vepa()2V,Ic=0 (-)1.0 pA DC Current Gain hprl Ver=()10V, Ic=()10mA 40% 320K hpr2 Vor=()10V Ie=()190mA 20 Gain-Bandwidth Product fr Voe=()380V Ico=(-)50mA 300 MHz Output Capacitance Cob Vep=()30V,f=1MHz 2.7 pF (3.2) pF Reverse Transfer Capacitance Cre Vep=(-)30V f= 1MHz 2.2 pF (2.7) pF C-E Saturation Voltage Vekisat) Io=()80mA,Ip=()3mA (}1.0 Vv [-B Saturation Voltage Varsat) Ic=()380mA,Ip=(-)3mA (-}1.0 Vv Xhpyl : The 25A1697/28C4474 are classified by 10mA hp as follows : 40 c so | 60 D 120 { 100 200 | 160 F 320 | -Pckage Dimensions 2041 (unit : mm) 16.0 I 2.4 . fear = E - ih N S c in B I- a [7.2 . E: Emitter ti | [=== C: Collecter 0-7. 2B: Base i ee nN SANYO; TO220MzL, SANYO Electric Co.,Ltd. Semiconductor Business Headquarters . TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN | 4039MO,TS No3018-1/428A1697/25C4474 DC Current Gain,hp, | Colleetor Current; mA Collector CurrentI mA 4 Gain-Bandwidth Product,fp MHz 1 ~ Qo -20 Ic VcE 2541697 24 -6 250u 4 200A 1500A 10004 50uA +12 16 -20 Collector-to Emitter Voltage,Vcp ~ V {Ic VBE 160 T 2541697 -140 | Yor=10 -] vm | -80 -60 -40 ~20 | 0 / 4 70,2 04 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage,Vap V hrFeE Ic 25A1697 Voe=10V 100 1G 10 -100 Collector Current; mA f 100 T Ic 25A1697 7 VoE=30V _ a 3] | Ph q y Li fl 100 5S J -10 a a 5 -100 Z a Collector Currentg mA Collector Current, mA Collector Current,l, mA BC Current Gain,hyp Gain-Bandwidth Product,ff - MHz Ic VceE 50 2504474 BHA | acoA 400uA 40 350A 30 3000 A 25004 20 20024 150nA to 100A 50uA 0 le=0 4 t 2 Collector-to-Emitter Voltage, Vop V Ic VBE 160 T | | 2804474 140 . Vee=10v 4 120 | too 80 | | 60 : 49 20 / i 0 | | 0 6.2 0.4 06 0.8 16 1.2 Base-to Emitter Voltage,Vpg V hFE ~ Ic 2304474 Voe=10V 1 10 rod Collector Current,lg mA - fr - tog I Ic T 2804474 Yoe=30V4 | aA 2 a ca \ x 100 5 ts 10 z > 100 Collector Current,Ic mA No3018-2/425A1697/25C4474 Collector Current,I mA Collector Dissipation,P. W 8 3 cob,Cre VcBs 4 T TT 23541697 I f= 1 MHz 10 i 8 ee ae f = gs J SS oS Tn] P..| C, go Se ah i oe 4 Pe oa i a OO Ss bet a, +2 3.0610 oO d' = a 7 few 5 3 761g 4 3 2 -10 a 5 =100 Collector-to-Base Voltage,Vcg V Vce (sat) Ic ! 25A1697 ~ Io/lp=10 { 10a a 3 i 8 ] rm > 7 8% / Si8- 3 Es V pia / 3 g 7 uo at ge 7 =Bo01 nat og OM en > 7 0 z 3 7400 2 Collector Current,l mA A 3 O 1697/2504474 For PNP, minus is omitted, Te= 25C Single pulse 10 100 Collector-to-Emitter Voltage, Voce - V Pc Ta T T T 235A41697/2804474 AN Ne \ \ 20 40 60 _ 60 100 126 140 160 Ambient Temperature,Ta C Cob,cre VCB a T rT ; 2504474 f= 1 MHz 4 10 | 2 = = oa 4 o 8 'D Sy o & e ee 6 Ros Ee gO gy ay a C P] Be ee v & 4 ea oh P. So 2 Pig oO $ . 7 ee + i?) a 2 10 J = 100 Collector-to.Base Voltage, Veg V VcE (sat) Ic 2804474 ed lc/lB=10 | 1.0 & i o fe > & & a8 E'S a > 3 Pa Bsa Ol Ou i0 100 Collector Current mA Po Ta 2.0 T t T 3 25A1697/2504474 I iz \ ; 16 uo fy \\ g 1.2 Wh, eB 7. 3 a o. = a a % A OB Ne ad 8 & B04 N o N\ 0 N\ 6 20 40 60 80 10 120 140 1:3) Ambient Temperature,Ta C * Ne3018-3/428A1697/2SC4474 HM No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. B Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and ernployees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litgation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, Mi information {including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are Made or impled regarding its use or any infringements of intellectual property rights or other rights of third parties, No3018-4/4