Hardware
Documentation
Hall-Effect Sensor Family
HAL® 54x
Edition Feb. 12, 2009
DSH000023_003EN
Data Sheet
HAL54x DATA SHEET
2Feb. 12, 2009; DSH000023_003EN Micronas
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Micronas assumes no liability for errors and gives no
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Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
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Any new issue of this document invalidates previous
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Micronas Trademarks
–HAL
Micronas Patents
Choppered Offset Compensation protected by
Micronas patents no. US5260614, US5406202,
EP0525235 and EP0548391.
Third-Party Trademarks
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may be trademarks of their respective companies.
Contents, continued
Page Section Title
Micronas Feb. 12, 2009; 000023_003ENDS 3
DATA SHEET HAL54x
4 1. Introduction
4 1.1. Features
4 1.2. Family Overview
5 1.3. Marking Code
5 1.4. Operating Junction Temperature Range
5 1.5. Hall Sensor Package Codes
5 1.6. Solderability and Welding
5 1.7. Pin Connections
6 2. Functional Description
7 3. Specifications
7 3.1. Outline Dimensions
12 3.2. Dimensions of Sensitive Area
12 3.3. Positions of Sensitive Areas
12 3.4. Absolute Maximum Ratings
12 3.4.1. Storage and Shelf Life
13 3.5. Recommended Operating Conditions
14 3.6. Characteristics
15 3.7. Magnetic Characteristics Overview
19 4. Type Description
19 4.1. HAL542
21 4.2. HAL543
23 4.3. HAL546
25 4.4. HAL548
27 5. Application Notes
27 5.1. Ambient Temperature
27 5.2. Extended Operating Conditions
27 5.3. Start-up Behavior
27 5.4. EMC and ESD
28 6. Data Sheet History
HAL54x DATA SHEET
4Feb. 12, 2009; DSH000023_003EN Micronas
Hall-Effect Sensor Family
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL54x family consists of different Hall switches
produced in CMOS technology. All sensors include a
temperature-compensated Hall plate with active offset
compensation, a comparator, and an open-drain out-
put transistor. The comparator compares the actual
magnetic flux through the Hall plate (Hall voltage) with
the fixed reference values (switching points). Accord-
ingly, the output transistor is switched on or off.
In addition to the HAL50x/51x family, the HAL54x fea-
tures a power-on and undervoltage reset.
The sensors of this family differ in the switching behav-
ior and the switching points.
The active offset compensation leads to constant mag-
netic characteristics over supply voltage and tempera-
ture range. In addition, the magnetic parameters are
robust against mechanical stress effects.
The sensors are designed for industrial and automo-
tive applications and operate with supply voltages
from 4.3 V to 24 V in the ambient temperature range
from −40°C up to 150°C.
All sensors are available in the SMD-package
SOT89B-1 and in the leaded versions TO92UA-1 and
TO92UA-2.
1.1. Features
– switching offset compensation at typically 62 kHz
– operates from 4.3 V to 24 V supply voltage
– overvoltage protection at all pins
– reverse-voltage protection at VDD-pin
– magnetic characteristics are robust against
mechanical stress effects
– short-circuit protected open-drain output by thermal
shut down
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– constant switching points over a wide supply volt-
age range
– the decrease of magnetic flux density caused by ris-
ing temperature in the sensor system is compen-
sated by a built-in negative temperature coefficient
of the magnetic characteristics
– ideal sensor for applications in extreme automotive
and industrial environments
– EMC corresponding to ISO 7637
1.2. Family Overview
The types differ according to the magnetic flux density
values for the magnetic switching points and the tem-
perature behavior of the magnetic switching points.
Latching Sensors:
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
Unipolar Sensors:
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
Type Switching
Behavior Sensitivity see
Page
542 latching high 19
543 unipolar low 21
546 unipolar high 23
548 unipolar medium 25
DATA SHEET HAL54x
Micronas Feb. 12, 2009; DSH000023_003EN 5
1.3. Marking Code
All Hall sensors have a marking on the package sur-
face (branded side). This marking includes the name
of the sensor and the temperature range.
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
K: TJ = −40 °C to +140 °C
E: TJ = −40 °C to +100 °C
Note: Due to power dissipation, there is a difference
between the ambient temperature (TA) and junc-
tion temperature. Please refer to section 5.1. on
page 27 for details.
1.5. Hall Sensor Package Codes
Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
1.6. Solderability and Welding
Soldering
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Welding
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
1.7. Pin Connections
Fig. 1–1: Pin configuration
Type Temperature Range
K E
HAL542 542K 542E
HAL543 543K 543E
HAL546 546K 546E
HAL548 548K 548E
HALXXXPA-T
Temperature Range: K or E
Package: SF for SOT89B-1
UA for TO92UA
Type: 54x
Example: HAL542UA-K
→Type: 542
→Package: TO92UA
→Temperature Range: TJ = −40 °C to +140 °C
1VDD
2, 4 GND
3OUT
HAL54x DATA SHEET
6Feb. 12, 2009; DSH000023_003EN Micronas
2. Functional Description
The Hall effect sensor is a monolithic integrated circuit
that switches in response to magnetic fields. If a mag-
netic field with flux lines perpendicular to the sensitive
area is applied to the sensor, the biased Hall plate
forces a Hall voltage proportional to this field. The Hall
voltage is compared with the actual threshold level in
the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induc-
tion of magnets at higher temperatures. If the magnetic
field exceeds the threshold levels, the open drain out-
put switches to the appropriate state. The built-in hys-
teresis eliminates oscillation and provides switching
behavior of output without bouncing.
Magnetic offset caused by mechanical stress is com-
pensated for by using the “switching offset compensa-
tion technique”. Therefore, an internal oscillator pro-
vides a two phase clock. The Hall voltage is sampled
at the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are
averaged and compared with the actual switching
point. Subsequently, the open drain output switches to
the appropriate state. The time from crossing the mag-
netic switching level to switching of output can vary
between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
Output-pin and VDD pin together with external series
resistors. Reverse current is limited at the VDD pin by
an internal series resistor up to −15 V. No external
reverse protection diode is needed at the VDD pin for
reverse voltages ranging from 0 V to −15 V.
A built-in reset-circuit clamps the output to the “high”
state (reset state) during power-on or when the supply
voltage drops below a reset voltage of Vreset < 4.3 V.
For supply voltages between Vreset and 4.3 V, the out-
put state of the device responds to the magnetic field.
For supply voltages above 4.3 V, the device works
according to the specified characteristics.
Fig. 2–1: HAL54x block diagram
Fig. 2–2: Timing diagram
HAL54x
Temperature
Dependent
Bias
Switch
Hysteresis
Control
Comparator
Output
V
DD
1
OUT
3
Clock
Hall Plate
GND
2
Power-on &
Undervoltage
Reset
Short Circuit &
Overvoltage
Protection
Reverse
Voltage &
Overvoltage
Protection
t
VOL
VOUT
1/fosc = 9 μs
VOH
B
BON
fosc
t
t
tft
IDD
t
DATA SHEET HAL54x
Micronas Feb. 12, 2009; DSH000023_003EN 7
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-1: Plastic Small Outline Transistor package, 4 leads
Ordering code: SF
Weight approximately 0.034 g
HAL54x DATA SHEET
8Feb. 12, 2009; DSH000023_003EN Micronas
Fig. 3–2:
TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread
Weight approximately 0.106 g
DATA SHEET HAL54x
Micronas Feb. 12, 2009; DSH000023_003EN 9
Fig. 3–3:
TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread
Weight approximately 0.106 g
HAL54x DATA SHEET
10 Feb. 12, 2009; DSH000023_003EN Micronas
Fig. 3–4:
TO92UA-1: Dimensions ammopack inline, spread
DATA SHEET HAL54x
Micronas Feb. 12, 2009; DSH000023_003EN 11
Fig. 3–5:
TO92UA-2: Dimensions ammopack inline, not spread
HAL54x DATA SHEET
12 Feb. 12, 2009; DSH000023_003EN Micronas
3.2. Dimensions of Sensitive Area
0.25 mm × 0.12 mm
3.3. Positions of Sensitive Areas
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-
lute maximum-rated voltages to this high-impedance circuit.
All voltages listed are referenced to ground (GND).
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
SOT89B-1 TO92UA-1/-2
y 0.95 mm nominal 1.0 mm nominal
A4 0.3 mm nominal
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1 −15 281) V
VOOutput Voltage 3 −0.3 281) V
IOContinuous Output On Current 3 −501) mA
TJJunction Temperature Range −40 170 °C
1) as long as TJmax is not exceeded
DATA SHEET HAL54x
Micronas Feb. 12, 2009; DSH000023_003EN 13
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this speci-
fication is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol Parameter Pin No. Min. Max. Unit
VDD Supply Voltage 1 4.3 24 V
IOContinuous Output On Current 3 0 20 mA
VOOutput Voltage
(output switched off)
3024V
HAL54x DATA SHEET
14 Feb. 12, 2009; DSH000023_003EN Micronas
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V, GND = 0 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Fig. 3–6: Recommended pad size SOT89B-1
Dimensions in mm
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
IDD Supply Current 1 2.3 3 4.2 mA TJ = 25 °C
IDD Supply Current over
Temperature Range 1 1.6 3 5.2 mA
VDDZ Overvoltage Protection
at Supply 1−28.5 32 V IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ Overvoltage Protection at Output 3 −28 32 V IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VOL Output Voltage 3 −130 280 mV IOL = 20 mA, TJ = 25 °C
VOL Output Voltage over
Temperature Range 3−130 400 mV IOL = 20 mA
IOH Output Leakage Current 3 −0.06 0.1 μA Output switched off,
TJ = 25 °C, VOH = 4.3 to 24 V
IOH Output Leakage Current over
Temperature Range 3−−10 μA Output switched off,
TJ ≤150 °C, VOH = 4.3 to 24V
fosc Internal Oscillator
Chopper Frequency −−62 −kHz TJ = 25 °C,
VDD = 4.5 to 24 V
Vreset Reset Voltage 1 −3.8 −V
ten(O) Enable Time of Output after
Setting of VDD
1−70 −μsV
DD = 12 V 1)
trOutput Rise Time 3 −75 400 ns VDD = 12 V,
RL = 820 Ohm,
CL = 20 pF
tfOutput Fall Time 3 −50 400 ns
RthJSB
case
SOT89B-1
Thermal Resistance Junction
to Substrate Backside −−150 200 K/W Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
for pad size see Fig. 3–6
RthJA
case
TO92UA-1,
TO92UA-2
Thermal Resistance Junction
to Soldering Point −−150 200 K/W
1) B > BON + 2 mT or B < BOFF - 2 mT
1.05
1.05
1.80
0.50
1.50
1.45
2.90
DATA SHEET HAL54x
Micronas Feb. 12, 2009; DSH000023_003EN 15
3.7. Magnetic Characteristics Overview
at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V, Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Note: For detailed descriptions of the individual types, see pages 19 and following.
Sensor Parameter On point BON Off point BOFF Hysteresis BHYS Unit
Switching Type TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max.
HAL542 −40 °C1 2.8 5 −5−2.8 −1 4.5 5.85 7.2 mT
latching 25 °C1 2.6 4.5 −4.5 −2.6 −1 4.5 5.5 6.5 mT
140 °C 0.6 2.4 4.6 −4.6 −2.4 −0.6 3.3 4.8 6.2 mT
HAL543 −40 °C212733152127468mT
unipolar 25 °C212733152127468mT
140 °C2127331521274 5.58 mT
HAL546 −40 °C 4.3 5.9 7.7 2.1 3.8 5.5 1.5 2.1 2.9 mT
unipolar 25 °C 3.8 5.5 7.2 2 3.5 5 1.4 2 2.8 mT
140 °C 3.2 4.8 6.9 1.8 3.1 5.5 1 1.7 2.6 mT
HAL548 −40 °C12192461318468mT
unipolar 25 °C12182461218468mT
140 °C12172461118468mT
HAL54x DATA SHEET
16 Feb. 12, 2009; DSH000023_003EN Micronas
–15
–10
–5
0
5
10
15
20
–15–10 –5 0 5 10 15 20 25 30 35 V
mA
V
DD
I
DD
T
A
= –40 °C
T
A
= 25 °C
T
A
=140 °C
25 HAL54x
Fig. 3–7: Typical supply current
versus supply voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
12345678
V
mA
V
DD
I
DD
T
A
= –40 °C
T
A
= 25 °C
T
A
= 140 °C
T
A
= 100 °C
HAL54x
Fig. 3–8: Typical supply current
versus supply voltage
0
1
2
3
4
5
–50 0 50 100 150 200°C
mA
T
A
I
DD
V
DD
= 3.8 V
V
DD
= 12 V
V
DD
= 24 V
HAL54x
Fig. 3–9: Typical supply current
versus ambient temperature
0
10
20
30
40
50
60
70
80
90
100
–50 0 50 100 150 200°C
kHz
TA
fosc
VDD = 3.8 V
VDD = 4.5 V...24 V
HAL54x
Fig. 3–10: Typ. internal chopper frequency
versus ambient temperature
DATA SHEET HAL54x
Micronas Feb. 12, 2009; DSH000023_003EN 17
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25 30 V
kHz
VDD
fosc
TA = –40 °C
TA = 25 °C
TA = 140 °C
HAL54x
Fig. 3–11: Typ. internal chopper frequency
versus supply voltage
0
10
20
30
40
50
60
70
80
90
100
3 3.5 4.0 4.5 5.0 5.5 6.0 V
kHz
VDD
fosc
TA= –40 °C
TA=25 °C
TA=140 °C
HAL54x
Fig. 3–12: Typ. internal chopper frequency
versus supply voltage
0
50
100
150
200
250
300
350
0 5 10 15 20 25 30 V
mV
VDD
VOL
TA = –40 °C
TA = 25 °C
IO = 20 mA
TA = 100 °C
HAL54x
Fig. 3–13: Typical output low voltage
versus supply voltage
0
100
200
300
400
–50 0 50 100 150 200°C
mV
TA
VOL
VDD = 24 V
VDD = 3.8 V
VDD = 4.5 V
HAL54x
IO = 20 mA
Fig. 3–14: Typical output low voltage
versus ambient temperature
HAL54x DATA SHEET
18 Feb. 12, 2009; DSH000023_003EN Micronas
15 20 25 30 35 V
VOH
IOH
TA= –40 °C
TA=150 °C
TA=100 °C
TA=25 °C
10–6
10–5
10–4
10–3
10–2
10–1
100
101
102
103
104HAL54x
μA
Fig. 3–15: Typ. output high current
versus output voltage
–50 0 50 100 150 200°C
μA
TA
IOH VOH = 24 V
VOH = 3.8 V
10–5
10–4
10–3
10–2
10–1
100
101
102HAL54x
Fig. 3–16: Typical output leakage current
versus ambient temperature
–30
–20
–10
0
10
20
30
0.01 0.10 1.00 10.00 100.00 1000.00
dBμA
f
IDD
VDD = 12 V
TA = 25 °C
Quasi-Peak-
Measurement
HAL54x
max.spurious
signals
1 10 100 1000 MHz
Fig. 3–17: Typ. spectrum of supply current
0
10
20
30
40
50
60
70
80
0.01 0.10 1.00 10.00 100.00 1000.00
dBμV
f
VDD
VP = 12 V
TA = 25 °C
Quasi-Peak-
Measurement
test circuit 2
HAL54x
max.spurious
signals
1 10 100 1000 MHz
Fig. 3–18: Typ. spectrum of supply voltage
DATA SHEET HAL542
Micronas Feb. 12, 2009; DSH000023_003EN 19
4. Type Description
4.1. HAL542
The HAL542 is the most sensitive latching sensor of
this family (see Fig. 4–1).
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
Magnetic Features:
– switching type: latching
– high sensitivity
–typical B
ON: 2.6 mT at room temperature
–typical B
OFF: −2.6 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K
Applications
The HAL542 is the optimal sensor for applications with
alternating magnetic signals and weak magnetic
amplitude at the sensor position such as:
– applications with large air gap or weak magnets,
– rotating speed measurement,
– commutation of brushless DC motors, and
– CAM shaft sensors, and
– magnetic encoders.
Fig. 4–1: Definition of magnetic switching points for
the HAL542
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C1 2.8 5 −5−2.8 −1 4.5 5.85 7.2 0 mT
25 °C1 2.6 4.5 −4.5 −2.6 −1 4.5 5.5 6.5 −1.5 0 1.5 mT
100 °C0.95 2.5 4.4 −4.4 −2.5 −0.95 3.7 5.0 6.3 0 mT
140 °C 0.6 2.4 4.6 −4.6 −2.4 −0.6 3.3 4.8 6.2 0 mT
HAL542 DATA SHEET
20 Feb. 12, 2009; DSH000023_003EN Micronas
Note: In the diagram “Magnetic switching points ver-
sus ambient temperature”, the curves for
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
–6
–4
–2
0
2
4
6
0 5 10 15 20 25 30 V
mT
V
DD
B
ON
B
OFF
HAL542
B
ON
B
OFF
T
A
= –40 °C
T
A
= 25 °C
T
A
= 140 °C
T
A
= 100 °C
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
–6
–4
–2
0
2
4
6
–50 0 50 100 150 200°C
mT
TA, TJ
BON
BOFF
VDD = 3.8 V
VDD = 4.3 V...24 V
BONmax
BONtyp
BONmin
BOFFmax
BOFFtyp
BOFFmin
HAL542
Fig. 4–3: Magnetic switching points
versus temperature
DATA SHEET HAL543
Micronas Feb. 12, 2009; DSH000023_003EN 21
4.2. HAL543
The HAL543 is the most insensitive unipolar sensor of
this family (see Fig. 4–4).
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
Magnetic Features:
– switching type: unipolar
– low sensitivity
–typical B
ON: 27 mT at room temperature
–typical B
OFF: 21 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– points is −1000 ppm/K
Applications
The HAL543 is the optimal sensor for applications with
unipolar magnetic signals and large magnetic ampli-
tude at the sensor position such as:
– position and end-point detection,
– contactless solution to replace microswitches,
– rotating speed measurement.
Fig. 4–4: Definition of magnetic switching points for
the HAL543
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C2127331521274 6 8 −24 −mT
25 °C2127331521274 6 8 182430mT
100 °C2127331521274 6 8 −24 −mT
140 °C2127331521274 5.58 −24 −mT
HAL543 DATA SHEET
22 Feb. 12, 2009; DSH000023_003EN Micronas
Note: In the diagram “Magnetic switching points ver-
sus ambient temperature”, the curves for
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
10
12
14
16
18
20
22
24
26
28
30
0 5 10 15 20 25 30 V
mT
V
DD
B
ON
B
OFF
HAL543
B
OFF
T
A
= –40 °C
T
A
= 25 °C
T
A
= 140 °C
T
A
= 100 °C
B
ON
Fig. 4–5: Typ. magnetic switching points
versus supply voltage
10
15
20
25
30
35
40
–50 0 50 100 150 200°C
mT
T
A
, T
J
B
ON
B
OFF
V
DD
= 4.3 V...24 V
B
ON
max
B
ON
typ
B
ON
min
B
OFF
max
B
OFF
typ
B
OFF
min
HAL543
Fig. 4–6: Magnetic switching points
versus temperature
DATA SHEET HAL546
Micronas Feb. 12, 2009; 000023_003EN 23
4.3. HAL546
The HAL546 is a quite sensitive unipolar sensor (see
Fig. 4–7).
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
Magnetic Features:
– switching type: unipolar
– high sensitivity
–typical B
ON: 5.5 mT at room temperature
–typical B
OFF: 3.5 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −1000 ppm/K.
Applications
The HAL546 is the optimal sensor for applications with
one magnetic polarity such as:
– solid state switches,
– contactless solution to replace micro-switches, and
– rotating speed measurement.
Fig. 4–7: Definition of magnetic switching points for
the HAL546
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C 4.3 5.9 7.7 2.1 3.8 5.5 1.5 2.1 2.9 −4.9 −mT
25 °C 3.8 5.5 7.2 2 3.5 5 1.4 2 2.8 2.9 4.5 6.1 mT
100 °C 3.5 5.3 7 1.9 3.3 5.4 1.1 1.9 2.6 −4.3 −mT
140 °C 3.2 4.8 6.9 1.8 3.1 5.5 1 1.7 2.6 −4−mT
HAL546 DATA SHEET
24 Feb. 12, 2009; DSH000023_003EN Micronas
Note: In the diagram “Magnetic switching points ver-
sus ambient temperature”, the curves for
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30 V
mT
V
DD
B
ON
B
OFF
HAL546
B
ON
B
OFF
T
A
= –40 °C
T
A
= 25 °C
T
A
= 140 °C
T
A
= 100 °C
Fig. 4–8: Typ. magnetic switching points
versus supply voltage
0
1
2
3
4
5
6
7
8
–50 0 50 100 150 200°C
mT
T
A
, T
J
B
ON
B
OFF
V
DD
= 4.3 V...24 V
B
ON
max
B
ON
typ
B
ON
min
B
OFF
max
B
OFF
typ
B
OFF
min
HAL546
Fig. 4–9: Magnetic switching points
versus temperature
DATA SHEET HAL548
Micronas Feb. 12, 2009; DSH000023_003EN 25
4.4. HAL548
The HAL548 is a unipolar switching sensor (see
Fig. 4–10).
The output turns low with the magnetic south pole on
the branded side of the package and turns high if the
magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.
Magnetic Features:
– switching type: unipolar,
– medium sensitivity
–typical B
ON: 18 mT at room temperature
–typical B
OFF: 12 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Applications
The HAL548 is the ideal sensor for all applications
with one magnetic polarity and weak magnetic ampli-
tude at the sensor position such as:
– solid state switches,
– contactless solution to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
Fig. 4–10: Definition of magnetic switching points for
the HAL548
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 4.3 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
BOFF BON
0
VOL
VO
Output Voltage
B
BHYS
Parameter On point BON Off point BOFF Hysteresis BHYS Magnetic Offset Unit
TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
−40 °C1219246 13184 6 8 −16 −mT
25 °C 12 18 24 6 12 18 4 6 8 9 15 21 mT
100 °C1218246 12184 6 8 −15 −mT
140 °C1217246 11184 6 8 −14 −mT
HAL548 DATA SHEET
26 Feb. 12, 2009; DSH000023_003EN Micronas
Note: In the diagram “Magnetic switching points ver-
sus ambient temperature”, the curves for
BONmin, BONmax, BOFFmin, and BOFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
4
6
8
10
12
14
16
18
20
0 5 10 15 20 25 30 V
mT
V
DD
B
ON
B
OFF
HAL548
B
ON
B
OFF
T
A
= –40 °C
T
A
= 25 °C
T
A
= 140 °C
T
A
= 100 °C
Fig. 4–11: Typ. magnetic switching points
versus supply voltage
0
5
10
15
20
25
30
–50 0 50 100 150 200°C
mT
T
A
, T
J
B
ON
B
OFF
V
DD
= 4.3 V...24 V
B
ON
max
B
ON
typ
B
ON
min
B
OFF
max
B
OFF
typ
B
OFF
min
HAL548
Fig. 4–12: Magnetic switching points
versus temperature
DATA SHEET HAL54x
Micronas Feb. 12, 2009; DSH000023_003EN 27
5. Application Notes
5.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
At static conditions and continuous operation, the fol-
lowing equation applies:
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the appli-
cation.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
5.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic character-
istics when operated within the Recommended Oper-
ating Conditions (see page 13).
Supply Voltage Below 4.3 V
The devices contain a Power-on Reset (POR) and an
undervoltage reset. For VDD < Vreset the output state is
high. For Vreset < VDD < 4.3 V the device responds to
the magnetic field according to the specified magnetic
characteristics.
Note: The functionality of the sensor below 4.3 V is not
tested. For special test conditions, please con-
tact Micronas.
5.3. Start-up Behavior
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the characteristics table (see page 14).
During the initialization time, the output state for the
HAL54x is “Off-state” (i.e. Output High). After ten(O),
the output will be high. The output will be switched to
low if the applied magnetic field B is above BON.
5.4. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–1). The series resistor
and the capacitor should be placed as closely as pos-
sible to the Hall sensor.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
Fig. 5–1: Test circuit for EMC investigations
TJTAΔT+=
ΔTI
DD VDD Rth
××=
TAmax TJmax ΔT–=
RV
220 Ω
VEMC
VP
4.7 nF
VDD
OUT
GND
1
2
3
RL1.2 kΩ
20 pF
HAL54x DATA SHEET
28 Feb. 12, 2009; DSH000023_003EN Micronas
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ Internet: www.micronas.com
6. Data Sheet History
1. Data sheet: “HAL54x Hall Effect Sensor Family”,
Nov. 27, 2002, 6251-605-1DS. First release of the
data sheet.
2. Data Sheet: “HAL54x Hall-Effect Sensor Family”,
Sept. 13, 2004, DSH000023_001EN. Second
release of the data sheet. Major changes:
– new package diagrams for SOT89B-1 and TO92UA-1
– package diagram for TO92UA-2 added
– ammopack diagrams for TO92UA-1/-2 added
3. Data Sheet: “HAL54x Hall-Effect Sensor Family”,
Dec. 5, 2008, DSH000023_002EN. Third release of
the data sheet. Major changes:
– Section 1.6. on page 5 “Solderability and Welding”
updated.
– Fig. 3–6: Recommended footprint SOT89-B1 added
– all package diagrams updated.
4. Data Sheet: “HAL54x Hall-Effect Sensor Family”,
Feb. 12, 2009, DSH000023_003EN. Fourth release
of the data sheet. Minor changes:
– Section 3.3. “Positions of Sensitive Areas” updated
(parameter A4 for SOT89-B1 was added).
