HF10A060ACE
Preliminary Data Sheet PD-20597A rev. B 02/02/04
Hexfred Die in Wafer Form
600 V
Size 10
6" Wafer
Nominal Back Metal Composition, Thickness Cr-Ni-Ag ( 1kA-4kA-6kA )
Nominal Front Metal Composition, Thickness 99% Al, 1% Si (3 microns)
Chip Dimensions 0.090" x 0.090"
Wafer Diameter 150mm, with std. < 100 > flat
Wafer Thickness .015" ± .003"
Relevant Die Mechanical Dwg. Number 01 - 5 159
Minimum Street Width 100 Microns
Reject Ink Dot Size 0.25mm Diameter Minimum
Recommended Storage Environment Store in original container, in dessicated
nitrogen, with no contamination
Mechanical Data
Die Outline
Reference Standard IR packaged part ( for design ) : HFA08TB60
Parameter Description Guaranteed (Min/Max) Test Conditions
VFM Forward Voltage 1.7V Max. TJ = 25°C, IF = 8.0A
BVRReverse Breakdown Voltage 600V Min. TJ = 25°C, IR = 200µA
IRM Reverse Leakage Current 5µA Max. TJ = 25°C, VR = 600V
Electrical Characteristics ( Wafer Form )
NOTES :
1 . ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )
2. CONTROLLING DIMENSION : ( INCH )
3. DIMENSIONAL TOLERANCES :
BONDING PADS : < 0.635 TOLERANCE = ± 0.013
WIDTH < (.0250) TOLERANCE = ± (.0005)
& > 0.635 TOLERANCE = ± 0.025
LENGTH > (.0250) TOLERANCE = ± (.0010)
OVERALLDIE < 1.270 TOLRANCE = ± 0.102
WIDTH < (.050) TOLERANCE = ± (.004)
& > 1.270 TOLERANCE = ± 0.203
LENGTH > (.050) TOLERANCE = ± (.008)
Document Number: 93788
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Revision: 12-Mar-07 1
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
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